RBV 402 Search Results

rbv-406m

Abstract: RBV406H RBV 402 RBV-401 RBV-406 RBV-402 RBV-404 RBV-406H RBV-408 RBV-40C
Contextual Info: Bridge Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. * RBV-401 100 RBV-402 200 RBV-404 400 RBV-406 600 RBV-408 800 RBV-40C 1000 I F (AV) (A) Tj (ºC) Tstg (ºC) 50Hz Half-cycle Sinewave Single Shot With Heatsink

Contextual Info: Bridge Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter VRM （V） Type No. RBV-401 100 RBV-402 200 RBV-404 400 RBV-406 600 RBV-408 800 RBV-40C 1000 RBV-406M 600 ※ RBV-406H 600 IFSM （A） I F（ AV） （A） Tj （℃）

RBV-404

Abstract: RBV-40C trr-50 RBV-401 rbv-406m RBV-402 RBV-406 RBV-406H RBV-408 406h
Contextual Info: Bridge Diodes Electrical Characteristics Ta— 25°C Absolute Maximum Ratings Parameter Tstg CC) Ifs m Vrm (V) Type No. RBV-401 100 RBV-402 200 RBV-404 400 RBV-406 600 RBV-408 800 RBV-40C 1000 I f ( av )(A ) With Heatsink (A) rc ) 50H z Hatf-cyde Sinewave

rvb 602

Abstract: RBV-602 FMM26S FMM-26S FMM36S FMM-36S FMM22S rvb 406m RBV-406M FMM34S
Contextual Info: 4-1 Rectifier Diodes 4-1-2 2 Chip Part No. FMM-31S, R FMM-22S, R 4-1-3 VRM IF IFSM V (A) (A) 100 20 120 FM80 2 RBV-401 10 100 TO-220F 1 RBV-601 20 120 FM80 2 RBV-402 10 100 TO-220F 1 RBV-602 20 120 FM80 2 RBV-4102 10 100 TO-220F 1 RBV-404 20 120 FM80 2 RBV-604

Contextual Info: SANKEN ELECTRIC U S A H E Rectifier Diodes for Power Supply • V rsm D | ?^D741 □□001E1 3 | :1 0 0 ~ 8 0 0 V H l o : 0 . 7 5 ~ 6 . 0 A MI/RBV Absolute Maximum Ratings Rating/ Characteristics V rsm lo If s m V (A ) (A) RBV-402L RBV-406M RBV-601 RBV-602

Contextual Info: 4-3 Ultra-Fast Recovery Rectifier Diodes 4-3-3 Bridge trrq : IR=IF 90% Recovery Point trrw : IR=2xIF Part No. RBV-402L IF IFSM trrq trrw V (A) (A) (nS) (nS) 4.0 80 40 30 RBV-40 1 6.0 100 50 35 RBV-60 2 200 RBV-602L 75% Recovery Point VRM Package Fig. No.

ctb34

Abstract: FMLG12 rb40 diodes RB40 N Sanken rb60 RB40 rb60 RECTIFIER CTB-34 7110743 FML-G12
Contextual Info: SANKEN ELECTRIC CO L T » 3 5E m » •M 7110741 DGDOfill 0 SAK J EVrm:100~ 600V Ultra Fast Recovery Diodes E io : 5 ~ 20A CTL/RBV/RBA Absolute Maximum Ratings V rsm V V rm (V) Type N o \ ^ per chip CTL-12S CTL-21S CTL-22S CTL-31S CTL-32S RBV-406H RBA-402L

RBV-602L

Abstract: ultra bridge 402L RBV-402L RBV-602L SANKEN
Contextual Info: Bridge Diodes Ultra-Fast-Recovery Electrical Characteristics (Ta = 25°C) Absolute Maximum Ratings Parameter VRM (V) Type No. I F (AV) (A) IFSM (A) With Heatsink 50Hz Half-cycle Sinewave Single Shot 4.0 80 RBV-402L Tj (°C) 200 Tstg (°C) VF (V) max per

rb60 RECTIFIER

Abstract: ITE 8512 ctl22s RB40 rb60 Sanken rb60 rb40 diodes CTL-22S CTUG3D RB40 N
Contextual Info: SANKEN ELECTRIC CO LT» m 35E » 7110741 DGDOfill 0 S A K J “7723-07 •M Ultra Fast Recovery Diodes EVrm:100~ 6 0 0 V E io : 5 ~ 20 A CTL/RBV/RBA Absolute Maximum Ratings V rm V lo (A) 200 200 With 50H2HallSineWave SinglePulse Fin 5.0 35 100 100 200

sanken RB40

Abstract: rba402 MI152R MI-152R "Sanken RB40"
Contextual Info: SANKEN ELECTRIC CO LTD í 3SE D Rectifier Diodes for Power Supply E3 7 ^ 0 7 4 1 QOQO?11}? S E3S A K J7 ^ 2 3 - 0 / h v RSm:100~800V m o:0.75~6.0A .2 C T 2 Ï3 Ï MI/RBA/RBV Rating/ Characteristics V rsm V lo (A) Type N o \ ^ MI-101 MI-101R MI-102 MI-102R

RBA-406B

Abstract: CI 3060 elsys CTUG3D AM01 AU02 EM01 EU02A FMU12S FMU-12S rb40 RECTIFIER
Contextual Info: SANKEN ELECTRIC CO LTD 3SE 5 Schottky Barrier Diodes m 7 ^ 0 7 4 1 0000fl21 «= ^ S A K J ^ ; £ | : g | E3Vrm: 3 0 — 9 0 V E lo : 0 .7 ~ 3 0 A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 A K 03 A K 04 A K 06 A K 09

CTUG3D

Abstract: D0200
Contextual Info: SANKEN ELECTRIC CO LT» 3SE » Schottky Barrier Diodes •a 00008S1 7 n o 7 m E3Vrm : i 30—90V Elo : 0.7—30A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV 36 Type N o \ ^ Per chip S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 AK 03 AK 04 AK 06 AK 09 EK 0 3 EK 0 4

RBV-404 bridge rectifier

Abstract: RBV4005 RBV410 RBV-406
Contextual Info: BL GALAXY ELECTRICAL RBV4005 - - - RBV410 VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A SILICON BRIDGE RECTIFIERS KBJ4 FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak

RBV408

Abstract: RBV-406
Contextual Info: RBV4005-RBV410 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A KBJ4 Features 4.7± 0.2 Ideal for printed circuit board 25± 0.3 φ 3.2± 9.5± 0.2 15± 0.3 plastic technique 0.15 4.6± 0.15 3.7± 0.2 Reliable low cost construction utilizing molded

AXP 223

Abstract: 000D 21068 EV45 21164a Alpha 21164PC
Contextual Info: Alpha Architecture Handbook Order Number EC–QD2KB–TE Revision/Update Information: This is Version 3 of the Alpha Architecture Handbook. The changes and additions in this book are subsequent to the Alpha AXP Architecture Reference Manual, Second Edition, and the Alpha AXP Architecture Handbook, Version 2.

24RCL

Abstract: 00FF DS2182 DS2187 S2182
Contextual Info: DS2182 DALLAS SEMICONDUCTOR DS2182 T1 Line Monitor PIN ASSIGNMENT FEATURES • Performs framing and monitoring functions in t • Supports Superframe and Extended Superframe formats 1 SDO[ 3 cs[ • Four onboard error counters - 16-bit bipolar violation - 8-bit CRC

FMLG12

Abstract: FML-G12 DIODE FMLG12 diode MARKING CODE M1 Marking code 6H rk44 diode diode MARKING CODE mo 6H MARKING diode marking EM01 7D05
Contextual Info: Marking Guide Note: hight-voltage rectifier diodes shall have different specifications. 6 TO-3PF, FM80 Type 1 Axial A0 ➀Part Number (abbreviation) M A 9 D ➃ ➀ ➁ ➂ The AM01 is indicated as “M.” ➁Class Z: 200V None: 400V A: 600V B: 800V C: 1000V

DIODE FMLG12

Contextual Info: Marking Guide Note: hight-voltage rectifier diodes shall have different specifications. 6 TO3P Type 1 Small TMD ➀Type No. abbreviation M A 9 D ➃ ➀ ➁ ➂ The AM01 Type No. is indicated as “M.” ➁Class Z: 200V None: 400V A: 600V B: 800V C: 1000V

SVC 561-10

Abstract: AXP 192 AXP 223 000D 161A-2 161A3 FBRX
Contextual Info: Alpha AXP Architecture Handbook Order Number EC–QD2KA–TE Revision/Update Information: Digital Equipment Corporation Maynard, Massachusetts This is Version 2 of the Alpha AXP Architecture Handbook. October 1994 While Digital believes the information included in this publication is correct as of the date of publication,

CTB34M

Abstract: fmlg12 CTB-34M marking RBV Marking code 6H SSB14 RK44 marking A63 SFPB-64 MARKING band color code
Contextual Info: Marking Guide 6 TO3P Type • 1 Small TMD ■ M A ① 9 D ④ ② ③ ①Type No. abbreviation The AM01 Type No. is indicated as “M.” ②Class Z: 200V None: 400V A: 600V B: 800V C: 1000V ③Manufacturing date First character: Year (Last digit of year)

Contextual Info: DALLAS SEMICONDUCTOR DS2182 T1 Line Monitor PIN ASSIGNMENT FEATURES • Performs framing and monitoring functions • Supports Superframe and Extended Superframe formats • Four onboard error counters - 16-bit bipolar violation 8-bit CRC 8-bit OOF 8-bit frame bit error

Contextual Info: DS2182 DALLAS s e m ic o n d u c to r DS2182 T1 Line Monitor PIN ASSIGNMENT FEATURES • Performs framing and monitoring functions in t • Supports Superframe and Extended Superframe formats 16-bit bipolar violation - 8-bit CRC 8-bit OOF - 8-bit frame bit error

APT40GF100BN

Abstract: TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS
Contextual Info: A D VA NC ED POUER TECHNOLOGY b lE D • D E S TIC I □ OOOfl'iG b3T *A V P A dvanced po w er TECHNOLOGY APT40GF100BN 1000V 40A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR All Ratings: Tc = 25°C unless otherwise specified.

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility