RC 548 TRANSISTOR Search Results

2SD536

Abstract: N 555 2SB681 LEM 543 2sb601 2SB552 2SB598 Lem LT 80 p cl 100 hie
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

Contextual Info: MOSEL MSS0151/ 0281 Speech Synthesizer Voice ROM FEATURES DESCRIPTION • Single power can operate at 2 .4 V through 5V . Th e M S S 0281 is a single-chip speech synthesizing C M O S V LS I that can synthesize voice and other sounds up to 2.8 seconds. Th e chip contains most of the necessary circuitry

TRANSISTOR c 547 B

Contextual Info: 30E D • 7^21237 00307Mb 0 ■ s g s -t h o m s o n [« ^ m itg T F G M flO S ^ 7# s G s“ thomson IR F K 6 H 150 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE IR F K 6 H 1 5 0 V dss RDS on Id 100 V 0 .0 1 0 a

STK9N10

Abstract: GC233
Contextual Info: r z 7 S C S -T H O M S O N Ä 7# S T K 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK9N10 . . • . . . V dss RoS on Id 100 V 0 .3 Í1 9 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

c41dc

Abstract: C40ACA oac5 schematic c41dcg OAC5AQ rc 548 transistor GORDOS OAC 24 Gordos OAC5A Gordos OAC5AH Gordos idc5f
Contextual Info: DIGITAL I/O MODULES 0.6 INCH INPUT MODULES FEATURES: CE Compliant Plug into Mounting Boards for 0.6˝ Modules AC Inputs for 24 V, 120 V, 240 V DC Inputs for 3.3 to 32 V, 10 to 48 V UL Recognized E46203 / CSA Certified (38595) 4 kV Optical Isolation Open-Collector Output

Contextual Info: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 76 Vf S 400 V k> 3A ^4)S on) 1.8 Si Package Ordering Code TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C

QM10KD-HB

Abstract: EM- 546 motor IO741 t15Q Mitsubishi transistor QM10 QM10K
Contextual Info: ! MITSUBISHI TRANSISTOR MODULES I } QM10KD-HB I } ; ? MEDIUM POWER SWITCHING USE j ; INSULATED TYPE } QM10KD-HB • Ic Collector current. 10A Collector-emitter voltage. 60 0 V • hFE DC current gain. 250

c 4977 transistor

Abstract: MSS0151 s0151 stp 6 pin "Photo resistor" SS0281
Contextual Info: MOSEL MSS0151/ 0281 Speech Synthesizer Voice ROM FEATURES DESCRIPTION • Single power can operate at 2 .4 V through 5V. Th e M S S 0281 is a single-chip speech synthesizing C M O S VLS I that can synthesize voice and other sounds up to 2.8 seconds. Th e chip contains most of the necessary circuitry

2SD480

Abstract: 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TRANSISTOR SD 2689

Abstract: inverter ic 3524 application mg76 HL 100 Transistor oki cross ambit inverter circuit WinNT40
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG74K/75K/76K 0.15µm Customer Structured Arrays March 2003 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

TDC1007J

Abstract: TDC1007 IC STU 404 149A HA-5033 Hughes d 2539 transistor trw 1007 TDC-1007J T900
Contextual Info: A Designers Guide for the HA-5033 Video Buffer Application Note November 1996 AN548.1 Introduction Intersil Corporation is an industry leader in the high speed, wideband, monolithic operational amplifier market. Due to the high performance of Intersil products, designers in the

buv62

Contextual Info: 2 3 Ü 2 3 7 0 0 2 0 7 ^ 1 b • n ^ - 3 3 - I S SCS-THOMSON Ä 7# mm i l L iO T T I ^ Ù f f il lD O l r 7 z s c S G S-TH0MS0N B U V 6 2 30E » FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND

TDC1007J

Abstract: tdc1007 IC STU 404 1007J TRW tdc stu 407 siemens rs 1007 trw 1007 clifford relay TDC-1007J
Contextual Info: Harris Semiconductor No. AN548.1 Harris Linear November 1996 A Designers Guide for the HA-5033 Video Buffer Author: Carl Wolfe Introduction Harris Semiconductor is an industry leader in the high speed, wideband, monolithic operational amplifier market. Due to the high performance of Harris products, designers in

oki cross

Abstract: ARM920T MG73M MG74M MG75M
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG73M/74M/75M 0.16µm Customer Structured Arrays August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

MG75M

Abstract: IC ATA 2398 oki cross ARM920T MG73M MG74P MG75P virage virage .spec
Contextual Info: D ATA SHEET O K I A S P RELIMINARY I C P R O D U C T S MG73M/74M/75M 0.16µm Customer Structured Arrays July 2001 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

oki cross

Contextual Info: D ATA SHEET O K I A S I C P R O D U C T S MG87P3/87P4/87P5 0.25µm Standard Cell July 2001 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

j353

Abstract: j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353
Contextual Info: • S ' — h NEC S > v X ^ MOS Field Effect Transistor 2SJ353 P ^ Ÿ T 'v O / M O S F E T v j - x f m 2 S J3 5 3 t è P 3 1 Ÿ * > 'M W M O S F E T 7 \ 5 V t iÜ Ê IC C f t t t i* m m m it : mm 1C * -r ^ 5 1 > ? i f ^-e-r 0 j: > im .iffc < * * ¥ & « :*

MG74n

Abstract: MG75N oki cross MG73N inverter ic 3524 application
Contextual Info: DATA S HEET O K I A S I C P R O D U C T S MG73N/74N/75N 0.22µm Customer Structure Array August 2002 MG73N/74N/75N ii 0.22µm Customer Structure Array Oki Semiconductor CONTENTS

AMBIT inverter

Abstract: oki cross MG113P MG115P MG73P MG74P MG75P
Contextual Info: D ATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays July 2001 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

oki cross

Abstract: MG113P MG115P MG73P MG74P MG75P MSI IC application with calculation
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays March 1998 MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit ASIC products are available in both Sea Of Gates

E46203

Abstract: IAC5E IAC24 IAC24A IDC24 OAC24 OAC24A ODC24 IDC5N transistor vc 548
Contextual Info: Input modules - Standard range 15.24 mm • ■ ■ ■ Single channel plug-in module Input : 110 V a, 240 V a, 5 - 28 V c, 12-48 V c Open collector output : 5 V c or 24 V c Standard industrial casing Types Part numbers IAC5 IAC5A IAC5E IDC5 IDC5N 84 110 110

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA