RECTIFIER 2209 Search Results

DIN 46200

Abstract: V61-14 D 3501 N 42 T d1dt NT398 GEZ DIODES v72-26-120m T2551N V72-26 T188F
Contextual Info: Clamping Force kN an d D is c D ia m e te r (m m ) Phase control thyristors Typ kN Rectifier diodes Phase control thyristors mm Typ kN mm Typ kN Fast rectifier diodes mm T 178 N T 201 N 2 ,5 -5 7 -1 2 41 58 T 2001 N 3 6 -5 2 120 D 428 N 3 ,2 -7 ,6 41 T 2006 N

D2209N

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2209 N ø 48 6 17,5 3,2 Anode ø 48 +0.1 ø3,5 x 3,5 tief / depth beidseitig / on both sides 30 7 max. 75 26 2,3 Kathode Cathode 4 VW K July 1996

D2209N

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2209 N ø 48 6 17,5 3,2 Anode ø 48 +0.1 ø3,5 x 3,5 tief / depth beidseitig / on both sides 30 7 max. 75 26 2,3 Kathode Cathode 4 VW K July 1996

D2209N

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2209 N ø 48 6 17,5 3,2 Anode ø 48 +0.1 ø3,5 x 3,5 tief / depth beidseitig / on both sides 30 7 max. 75 26 2,3 Kathode Cathode 4 VW K July 1996

2209 n reverse

Abstract: D2209N rectifier 2209
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2209 N ø 48 6 17,5 3,2 Anode ø 48 +0.1 ø3,5 x 3,5 tief / depth beidseitig / on both sides 30 7 max. 75 26 2,3 Kathode Cathode 4 VW K July 1996

EN5401

Abstract: SBS001C
Contextual Info: Ordering number:EN5401 SBS001C Schottky Barrier Diode 15V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SBS001C] Features · Low forward voltage (VF max=0.45V).

Contextual Info: KmmJI ! I jmm a aj m h SL^JI I j m l jmmm European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 2209 N 03,5 ' x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte

Contextual Info: KBU6A j RS601 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD, KBU6M j RS607 TECHNJCAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT-6.0 Amperes - FEATURES " Low leakage * Low forw ard voltage

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

C10-A10FX

Abstract: C12-A21BX 220v ac voltage stabilizer circuit C12-A21FX C10-A10BX solid state 220v ac stabilizer 220V AC Automatic Voltage stabilizer transistor A1232 releco relay 24v dc 10a C12-A21X
Contextual Info: IRC Interface and general application The new IRC relays Button and lockable lever push-to-test, lift-to-lock Mechanical and LED indication as standard Coil voltage marked on the top of the relay Marking label Optional in-built suppressors circuits and bridge rectifier for AC/DC relays

DS13

Abstract: 10-30N k 4110 DS30 DS10 DS11 DS12 DS14 DS16 DS18
Contextual Info: Click on outline no. Rectifier Diodes Type IFSM ∫i²dt IFAVM/tc kA A²s 10ms, Tvj max A/°C 10 ms, Tvj max *10³ 400 400 710 1195 4000 7000 9100 9100 12600 5 4 5 9 29 52 70 70 90 105,8 80 130 387,2 4061 13500 24500 24500 40000 255/110 255/ 75 450/122 760/115

D1809

Abstract: 2040.2590 68 4401 D1029 D1030 D1049 D1069 D1800 D452N
Contextual Info: Rectifier Diodes Type V rrm Ifrm sm Ifsm V A kA 10ms, 1^jmax V r SM = Vrrm + 100 V 50V 1) J i2d t A2s I fA V M ^ C V (T O ) It RthJC tvj max A /°C V m£2 °c/w °c 180° el sin 1 0 m S , t^jmax tvi = tv, = •103 ^vj max ^vj max outline D 121 N 800.2000

100 N 37

Abstract: LT 6250
Contextual Info: Rectifier diodes Type If r m s m V rrm V rsm tpSM ,/i2dt If a v m ^ c V TO lT R th jc ’»I * max tvi = t'.'| max 180 °el sin. tv j m ax Outline = Vrrm + 100 V 10 ms, 10 ms, tv] max W|max A kA A2s A/°C V mi) °c/w °c ▲ D 1800 N D 1809 N 2800 4000 3200

IG 2200 19

Contextual Info: Rectifier diodes Type Vrrm V r sm I f r u SM = V rrm If-SM / i2dt 10 m s, 10 ms, t. A V D 121 N D 121 K D 150 N 800 1200 1800 2000 800 1200 1800 2000 2800 3200 kA 360 1400 mû. 2.6 kA2s 33.8 D 255 N 1400 330 2.4 28.8 3600 420 3.7 68.5 t v, t., ir,i. 180°el

Contextual Info: EUPEC ‘H E D Rectifier diodes Type V rrm V •f r m s m A Ifsm • 3403ST7 DQD011D 35T ■ / i 2dt 10 ms, 10 ms, tvj max tvj max kA A2s I favm / I c A/°C UPEC r-oi>oi tvj max V TO It Rthjc tv, = ty] max tv, = tw,max sin. V mû K/W °c Outline 180'el 600 800 1200

d405n

Abstract: D 400 2200 E ic 4580 D1030 D1049 D1809 D1901 0 280 130 037
Contextual Info: EUPEC 4TE D 34 03 51 7 [ []D[311D 35T • Rectifier diodes Type ^RRM FRMSM FSM A FAVM^C '/ TO) RthJC T-Ol'O 10 ms, vi = tv ,= vj m a x v] m ax V] m a x 180 “el sin. kA A2S V m£2 K/W °c A/°C Outline vj max vi m ax 10 ms, V fpdt UPEC 7200 76/ 81 60/100

BYS 045 v 72

Abstract: BYS 045 bys 26-45 bys 27-45 DS17 BYS 26-90 BYS 21-45 bys 22-50 SCHOTTKY bys 50 BYS 045 v 75
Contextual Info: Overview Diodes in Disk Housings Rectifier Diodes Type V rrm V V rsm Ifrm sm I f SM Ji2d t IFA V M / t c V TO rT A kA A 2s A fC V m fi 10 ms, = V RR!.1 + 100 V (50V) 1) . T "v jm a x — T vj m ax R th J C ° c /w T , m ax o u tlin e °C 180° el sin

D1809

Contextual Info: Type V rrm V rsm b lE EUPEC Rectifier diodes If r m s m = V rrm If s m D / ¡ 2dt 34032T7 If a v m ^ c 0001332 V TO rT 77T « U P E C R t h jc tv| m a x O utline + 100 V V 10 ms, 10 ms, t.,= t»,= tvi max tvj max tjj max ^v] m ax A kA 180 “el sin. A 2s

2209

Abstract: ic 4580 D1809
Contextual Info: EUPEC b lE D • 34G 3Ecî7 0001332 77T ■ U P E C Rectifier diodes Type V rrm If s m / ¡ 2dt 10 ms, *',i max A kA A 2s If r m s m V r sm = V r rm V TO It Rthjc 10 ms, t.,= ‘ »j = 180 “el ^vj max iji max tvj m ax sin. A/°C V mD °C/W °c If a v m /Ic

Contextual Info: Rectifier Diodes Type V rrm Ifrm sm V A Vrsm = V r r m + 100 V 50V 1) i izdt kA A2s 10 ms, 1^jmax 10ms, tJjm ax '103 Ifsm lF A V M /t c V (T O ) rT R th J C tv j max A/°C V m ii °c/w °c tvi = 180° el sin tvi = max outline ^v| max D 121 N 800.2000 360

VD121

Contextual Info: Rectifier Diodes Type Netz-Gleichrichterdioden V rrm Ifrm sm V A + 100V 50V 1' V rsm = V rrm If s m ii2dt If A V M ^c A/°C kA A2s 10 ms, 10ms, Tvj max T v j max *103 5 4 105,8 80 V(TO) rT R th J C T"vj max V m ii °C/W °c outline Tvj=Tvj max Tvi=Tvi max 180° el sin

MR20

Abstract: DS113 TWF0400 mr-20
Contextual Info: MR20 US & A4 9/12/56 11:14 PM Page 1 DS113.0 powerdeck MR20 MODULAR POWER SHELF Output • 54V, 21A ■ 27V, 42A Features T he low profile, 2U high 19" rack mountable power shelf accommodates up to three hot plug TWF0400 power modules. Universal input voltage and self contained fan cooling ensure

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package KBPC-P Package Weight mg 21000 Product Group Type No. KBPC1000P – KBPC1012P KBPC1500P – KBPC1512P KBPC2500P – KBPC2512P KBPC3500P – KBPC3512P KBPC4000P – KBPC4012P

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package GBPC Package Weight mg 21000 Product Group Type No. GBPC1000 – GBPC1016 GBPC1500 – GBPC1516 GBPC2500 – GBPC2516 GBPC3500 – GBPC3516 GBPC4000 – GBPC4016 GBPC5000 – GBPC5016