RECTIFIER 8906 Search Results
RECTIFIER 8906 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CRG11B |
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General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG10A |
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General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CMG03A |
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General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT | Datasheet | ||
| CMG06A |
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General-purpose diode, 600 V, 1 A , Rectifier Diode, M-FLAT | Datasheet | ||
| CRG09A |
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General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet |
RECTIFIER 8906 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SB15H45Contextual Info: SB15H45 www.vishay.com Vishay General Semiconductor Photovoltaic Solar Cell Protection Schottky Plastic Rectifier High Barrier Technology for Improved High Temperature Performance This datasheet reflects specifications of product in actual application. FEATURES |
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SB15H45 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SB15H45 | |
SB15H45
Abstract: P600 diode
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SB15H45 2002/95/EC 2002/96/EC 08-Apr-05 SB15H45 P600 diode | |
SB15H45Contextual Info: New Product SB15H45 Vishay General Semiconductor Photovoltaic Solarcell Protection Schottky Rectifier High Barrier Technology for Improved High Temperature Performance This datasheet reflects specifications of product in actual application. FEATURES • Guardring for overvoltage protection |
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SB15H45 2002/95/EC 2002/96/EC 18-Jul-08 SB15H45 | |
SB15H45Contextual Info: New Product SB15H45 Vishay General Semiconductor Photovoltaic Solarcell Protection Schottky Rectifier High Barrier Technology for Improved High Temperature Performance This datasheet reflects specifications of product in actual application. FEATURES • Guardring for overvoltage protection |
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SB15H45 2002/95/EC 2002/96/EC 18-Jul-08 SB15H45 | |
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Contextual Info: New Product SS1P5L & SS1P6L Vishay General Semiconductor High-Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses |
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DO-220AA J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 | |
SS1P6L
Abstract: SS1P5L DO-220AA JESD22-B102 J-STD-002 89063 DSA00267082
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J-STD-020, 2002/95/EC 2002/96/EC DO-220AA 18-Jul-08 SS1P6L SS1P5L DO-220AA JESD22-B102 J-STD-002 89063 DSA00267082 | |
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Contextual Info: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability |
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UHF20FCT ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB J-STD-002 JESD22-B102 08-Apr-05 | |
JESD22-B102
Abstract: J-STD-002 UHF20FCT
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UHF20FCT ITO-220AB 2002/95/EC 2002/96/EC 18-Jul-08 JESD22-B102 J-STD-002 UHF20FCT | |
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Contextual Info: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability |
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UHF20FCT ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB J-STD-002 JESD22-B102 11-Mar-11 | |
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Contextual Info: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability |
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UHF20FCT ITO-220AB 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability |
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UHF20FCT ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB J-STD-002 JESD22-B102 2011/65/EU 2002/95/EC. | |
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Contextual Info: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability |
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UHF20FCT ITO-220AB 2002/95/EC 2002/96/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: New Product UHF20FCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction ITO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability |
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UHF20FCT ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB 08-Apr-05 | |
MSE1PJHM
Abstract: AEC-Q101-001 MSE1P
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J-STD-020, AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MSE1PJHM AEC-Q101-001 MSE1P | |
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Contextual Info: SS1P5L, SS1P6L www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses |
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J-STD-020, AEC-Q101 DO-220AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
UH6PJContextual Info: New Product UH6PJ Vishay General Semiconductor High Current Density Surface Mount Ultrafast High Voltage Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Oxide planar chip junction K • Ultrafast recovery time |
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J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC O-277A 18-Jul-08 UH6PJ | |
V20100R
Abstract: V20100R-E3/4W JESD22-B102 J-STD-002
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V20100R VF20100R O-220AB ITO-220AB 2002/95/EC 2002/96/EC 18-Jul-08 V20100R V20100R-E3/4W JESD22-B102 J-STD-002 | |
uh6pj
Abstract: J-STD-002
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O-277A J-STD-020, 22-A111 2002/95/EC 2002/96/EC 18-Jul-08 uh6pj J-STD-002 | |
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Contextual Info: U1B, U1C, U1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, |
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J-STD-020, DO-214AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
diode sg 89aContextual Info: MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifier FEATURES • • • • eSMP Series • • Top View Bottom View • • MicroSMP Very low profile - typical height of 0.65 mm Available Ideal for automated placement |
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J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 diode sg 89a | |
V20100RContextual Info: New Product V20100R & VF20100R Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power |
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V20100R VF20100R O-220AB ITO-220AB 2002/95/EC 2002/96/EC 08-Apr-05 V20100R | |
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Contextual Info: New Product V20100R & VF20100R Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power |
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V20100R VF20100R O-220AB ITO-220AB 22-B106 2002/95/EC 2002/96/EC 18-Jul-08 | |
UH6PJContextual Info: New Product UH6PJ Vishay General Semiconductor High Current Density Surface Mount Ultrafast High Voltage Rectifier FEATURES eSMP TM • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Oxide planar chip junction • Ultrafast recovery time |
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J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 UH6PJ | |
JESD22-A114
Abstract: JESD22-A115 J-STD-002
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J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 JESD22-A114 JESD22-A115 J-STD-002 | |