RECTIFIER INTERNATIONAL POWER MOS Search Results

C528 transistors

Abstract: C528 DIODE
Contextual Info: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353

IRF3205 smd

Abstract: irf640* spice regulator dpak SOIC 8P LDO 3.3 DAC Combo irf3205 spice ldo regulator iru1010-25cp IRU1050-CP
Contextual Info: International Rectifier LDOs and MOSFETs International Rectifier, the power conversion expert, offers optimal power semiconductors for portable, telecom, power supply, computer, motor drive, ballast, and automotive applications. More voltage ratings, from 20 V to 1000 V. More

TR C458

Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
Contextual Info: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package

es relay

Abstract: Avalanche cmos 600V N MOSFET T0-220
Contextual Info: International M Rectifier Power Integrated Circuits Power Switch IPS & SmartFET SIV-DCMOS For protected power MOSFET switches, International Rectifier employs a self isolated vertical DMOS/CMOS technology. This technology enables IR to provide low voltage (up to 60V) high

HEXFET III - A new Generation of Power MOSFETs

Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

IRFC9130

Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

TO274

Abstract: aluminium pop rivet WARTH TO-273 SUPER-220 austerlitz AN-1000 AN-1010 AN-1012 AN1012
Contextual Info: Application Note AN-1012 Mounting Considerations for International Rectifier’s Power Semiconductor Packages By Pamela Dugdale and Arthur Woodworth, International Rectifier Table of Contents Page Introduction .1

5S45S

Contextual Info: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi­

AN-1031

Contextual Info: Application Note AN-1031 Lead Bending Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Table of Contents Page Lead Bending .2

Contextual Info: I . ,• I Provisional Datasheet No. PD 9.1294A International IGR Rectifier IRFY9140CM HEXFET8 POWER MOSFET P-CHANNEL -100 Volt, 0.2£2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­

dts200

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1547 HEXFET POWER MOSFET IRFN150 N -C H A N N E L Product Summary 100 Voit, 0.0600 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi­

IRF7316

Contextual Info: International Rectifier I R PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = -30 V Ros on = 0.058Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier

AN-1031

Abstract: TO-247 FULLPAK Package
Contextual Info: Application Note AN-1031 Lead Bending and Soldering Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Introduction This application note is intended to address the two most frequently asked

C641

Contextual Info: PD - 9.1413D International M R Rectifier IRLMS5703 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vdss = "30V RDS(on) = 0.20Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize

Contextual Info: International jragj Rectifier HEXFET Power MOSFET • • • • • • 4655452 0015514 L12 mifiR PD-9.445C IRFP350 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

Contextual Info: 4ÔSS452 0D1SM1E International gog Rectifier • INR PD-9.868 IRFL210 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

1rfp9140

Contextual Info: International ^Rectifier MÛ55452 DD1SSSG bS3 HEXFET Power MOSFET INTERNATIONAL RECTIFIER PD-9.480C IINR IRFP9140 Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling

IRFZ48N

Abstract: IRFz48N MOSFET
Contextual Info: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

irfpc30

Contextual Info: International k Rectifier 4Û554S2 HEXFET® Power MOSFET INTERNATIONAL RECTIFIER 00155fei2 PD-9.596A IINR 3?S IRFPC30 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements

f422

Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
Contextual Info: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

hexsense

Abstract: IRCP054 equivalent
Contextual Info: 4655M5E 0D14b00 Gli International i-R Rectifier HEXFET Power MOSFET IINR PD-9.733 IRCP054 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Current Sense Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements