Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RECTIFIER INTERNATIONAL POWER MOS Search Results

    RECTIFIER INTERNATIONAL POWER MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    RECTIFIER INTERNATIONAL POWER MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF3205 smd

    Abstract: irf640* spice regulator dpak SOIC 8P LDO 3.3 DAC Combo irf3205 spice ldo regulator iru1010-25cp IRU1050-CP
    Text: International Rectifier LDOs and MOSFETs International Rectifier, the power conversion expert, offers optimal power semiconductors for portable, telecom, power supply, computer, motor drive, ballast, and automotive applications. More voltage ratings, from 20 V to 1000 V. More


    Original
    PDF IRF1104 IRF640N IRF3205* IRF1010N* IRFZ48N* IRCZ34 IRFZ46N* IRCZ24 IRL1004 IRFZ44N* IRF3205 smd irf640* spice regulator dpak SOIC 8P LDO 3.3 DAC Combo irf3205 spice ldo regulator iru1010-25cp IRU1050-CP

    TO274

    Abstract: aluminium pop rivet WARTH TO-273 SUPER-220 austerlitz AN-1000 AN-1010 AN-1012 AN1012
    Text: Application Note AN-1012 Mounting Considerations for International Rectifier’s Power Semiconductor Packages By Pamela Dugdale and Arthur Woodworth, International Rectifier Table of Contents Page Introduction .1


    Original
    PDF AN-1012 TO274 aluminium pop rivet WARTH TO-273 SUPER-220 austerlitz AN-1000 AN-1010 AN-1012 AN1012

    AN-1031

    Abstract: No abstract text available
    Text: Application Note AN-1031 Lead Bending Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Table of Contents Page Lead Bending .2


    Original
    PDF AN-1031 AN-1031

    AN-1031

    Abstract: TO-247 FULLPAK Package
    Text: Application Note AN-1031 Lead Bending and Soldering Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Introduction This application note is intended to address the two most frequently asked


    Original
    PDF AN-1031 AN-1031 TO-247 FULLPAK Package

    C528 transistors

    Abstract: C528 DIODE
    Text: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353


    OCR Scan
    PDF 075BV0SS C-527 IRFP350, IRFP351, IRFP352, IRFP353 T-39-15 C-528 C528 transistors C528 DIODE

    TR C458

    Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
    Text: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan
    PDF T-39-13 IRFP040 O-S47AC O-247AC 05BVDSS C-459 IRFP040, IRFP042 T-39-13 C-460 TR C458 transistors c458 IRFP040 C458 C C459 TIL 220 L740 c458 c455

    es relay

    Abstract: Avalanche cmos 600V N MOSFET T0-220
    Text: International M Rectifier Power Integrated Circuits Power Switch IPS & SmartFET SIV-DCMOS For protected power MOSFET switches, International Rectifier employs a self isolated vertical DMOS/CMOS technology. This technology enables IR to provide low voltage (up to 60V) high


    OCR Scan
    PDF O-220 es relay Avalanche cmos 600V N MOSFET T0-220

    HEXFET III - A new Generation of Power MOSFETs

    Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
    Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan
    PDF AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210

    IRFC9130

    Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
    Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan
    PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430

    5S45S

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­


    OCR Scan
    PDF IRFY9240CM -200Volt, 5545S DD24541 5S45S

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1293A International IGR Rectifier IRFY9130CM HEXFET9 POWER MOSFET P-CHANNEL -100 Volt, 0.3Q HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The effi­


    OCR Scan
    PDF IRFY9130CM

    Untitled

    Abstract: No abstract text available
    Text: I . ,• I Provisional Datasheet No. PD 9.1294A International IGR Rectifier IRFY9140CM HEXFET8 POWER MOSFET P-CHANNEL -100 Volt, 0.2£2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­


    OCR Scan
    PDF IRFY9140CM SS452

    dts200

    Abstract: No abstract text available
    Text: International IOR Rectifier Provisional Data Sheet No. PD-9.1547 HEXFET POWER MOSFET IRFN150 N -C H A N N E L Product Summary 100 Voit, 0.0600 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi­


    OCR Scan
    PDF

    g371

    Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
    Text: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International


    OCR Scan
    PDF T-39-Ã G-376 g371 IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371

    C641

    Abstract: No abstract text available
    Text: PD - 9.1413D International M R Rectifier IRLMS5703 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vdss = "30V RDS(on) = 0.20Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize


    OCR Scan
    PDF 1413D IRLMS5703 OT-23. 100ps C641

    Untitled

    Abstract: No abstract text available
    Text: International jragj Rectifier HEXFET Power MOSFET • • • • • • 4655452 0015514 L12 mifiR PD-9.445C IRFP350 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


    OCR Scan
    PDF IRFP350 O-247 O-220 O-247

    Untitled

    Abstract: No abstract text available
    Text: 4ÔSS452 0D1SM1E International gog Rectifier • INR PD-9.868 IRFL210 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan
    PDF SS452 IRFL210 OT-223 QD1S417

    1rfp9140

    Abstract: No abstract text available
    Text: International ^Rectifier MÛ55452 DD1SSSG bS3 HEXFET Power MOSFET INTERNATIONAL RECTIFIER PD-9.480C IINR IRFP9140 Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling


    OCR Scan
    PDF IRFP9140 -100V O-247 O-247 k50Kfi 1rfp9140

    IRFZ48N

    Abstract: IRFz48N MOSFET
    Text: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier


    OCR Scan
    PDF

    irfpc30

    Abstract: No abstract text available
    Text: International k Rectifier 4Û554S2 HEXFET® Power MOSFET INTERNATIONAL RECTIFIER 00155fei2 PD-9.596A IINR 3?S IRFPC30 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan
    PDF 554S2 00155fei2 IRFPC30 O-247 O-218 irfpc30

    f422

    Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
    Text: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International


    OCR Scan
    PDF 0GGci400 T-39-09 G-382 f422 transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba

    Untitled

    Abstract: No abstract text available
    Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION


    OCR Scan
    PDF

    hexsense

    Abstract: IRCP054 equivalent
    Text: 4655M5E 0D14b00 Gli International i-R Rectifier HEXFET Power MOSFET IINR PD-9.733 IRCP054 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Current Sense Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan
    PDF 4655M5E 0D14b00 IRCP054 0014b07 hexsense IRCP054 equivalent