REJ03G1 Search Results

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)

Contextual Info: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns

Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter

Contextual Info: FS10ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1408-0200 Previous: MEJ02G0061-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 Ω ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns

Contextual Info: TBB1017 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1469-0100 Rev.1.00 Aug 07, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction.

Contextual Info: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A

Contextual Info: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet RJK1055DPB 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching R07DS1058EJ0200 Previous: REJ03G1887-0100 Rev.2.00 Apr 11, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)

Contextual Info: Data Sheet HAT2205C R07DS1181EJ0500 Previous: REJ03G1237-0400 Rev.5.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices.

Contextual Info: Data Sheet HAT1108C R07DS1176EJ0600 Previous: REJ03G1234-0500 Rev.6.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 155 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting

RQA0009SXAQS

Abstract: RQA0009 RQA0009SXTL-E RQA0009SX c5 marking code 1747 C13
Contextual Info: RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting

RJK6014DPP

Abstract: RJK6014DPP-00-T2
Contextual Info: RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

PUSF0002ZC-A

Abstract: RKR0505AKH
Contextual Info: RKR0505AKH Silicon Schottky Barrier Diode for Rectifying REJ03G1493-0100 Rev.1.00 Jan 09, 2007 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Thin Ultra small Resin Package TURP is suitable for high density surface mounting and high speed assembly.

PRSS0003AA-A

Abstract: BCR5PM-12LG BCR5PM-12LG-A8 TRIAC dimmer control bcr5pm
Contextual Info: BCR5PM-12LG Triac Medium Power Use REJ03G1507-0200 Rev.2.00 Mar 06, 2007 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type • UL Recognized : Yellow Card No. E223904 File No.E80271 IT RMS : 5 A

RJK0354DSP

Abstract: RJK0354DSP-00-J0
Contextual Info: Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Features •    Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.4 m typ. (at VGS = 10 V)

H5N2501LD

Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
Contextual Info: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

RJK0301DPB

Abstract: RJK0301DPB-00-J0 RJK0301DPB-00
Contextual Info: RJK0301DPB Silicon N Channel Power MOS FET Power Switching REJ03G1338-0900 Rev.9.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS on = 2.3 mΩ typ. (at VGS = 10 V)

RQK0203SGDQA

Abstract: RQK0203SGDQATL-E SC-59A a83v
Contextual Info: RQK0203SGDQA Silicon N Channel MOS FET Power Switching REJ03G1323-0300 Rev.3.00 Jun 12, 2006 Features • Low on-resistance RDS on = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A

RQJ0204XGDQA

Abstract: RQJ0204XGDQATL-E SC-59A
Contextual Info: RQJ0204XGDQA Silicon P Channel MOS FET Power Switching REJ03G1320-0300 Rev.3.00 May 24, 2006 Features • Low on-resistance RDS on = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A

RQK0301FGDQS

Abstract: RQK0301FGDQSTL-E MARKING CODE RD 3.A
Contextual Info: RQK0301FGDQS Silicon N Channel MOS FET Power Switching REJ03G1269-0300 Rev.3.00 Jun 22, 2006 Features • Low on-resistance RDS on = 28 mΩ typ (VGS = 10 V, ID = 3 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A

RQK0605JGDQA

Abstract: RQK0605JGDQATL-E SC-59A
Contextual Info: RQK0605JGDQA Silicon N Channel MOS FET Power Switching REJ03G1278-0400 Rev.4.00 Jun 15, 2006 Features • Low on-resistance RDS on = 82 mΩ typ (VGS = 10 V, ID = 1.5 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A

RQK0204TGDQA

Abstract: RQK0204TGDQATL-E SC-59A
Contextual Info: RQK0204TGDQA Silicon N Channel MOS FET Power Switching REJ03G1324-0300 Rev.3.00 Jun 12, 2006 Features • Low on-resistance RDS on = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A

RQJ0301HGDQS

Abstract: RQJ0301HGDQSTL-E
Contextual Info: RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0300 Rev.3.00 Jun 05, 2006 Features • Low on-resistance RDS on = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A

rjk5020

Abstract: RJK5020DPK-E PRSS0004ZE-A RJK5020DPK SC-65
Contextual Info: RJK5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1263-0100 Rev.1.00 Sep. 23, 2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate