REMARK UM Search Results

Contextual Info: ITEM Q 1TY DESC. 1 HOUSING 2 CONTACT 1 MATERIAL TREATMENT THERMOPLASTIC MEETING UL 94V- 0 MOLDED WHITE COPPER ALLOY PLATIN, 100-200U" TIN /LEAD PLATING O N TAIL CONTACT AREA PLATING REMARK 50-90u" NICKEL BASE SEE REMARK SEE BELOW. REMARK: 1 . PROD. NO.: EH

z837

Contextual Info: DESCRIPTION TTY 1 COVER 1 LCP, UL 94V-0 2 ‘ BASE 1 LCP, UL 94V—0 1 PPS, UL 04V-O ACTUATOR 3 CONTACT REMARK MATERIAL ITEM PHOSPHOR BRONZE ALLOY, GOLD PLATING 236 OVER NICKEL ON CONTACT AREA AND . 4 TIN/LEAD OVER NICKEL ON SOLDER TAIL REMARK: (1 PROD. NO.:

Contextual Info: KM736FV4021 KM718FV4021 PRELIMINARY 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Draft Date Remark Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format.

62256DLG-7L

Contextual Info: KM62256D Family CMOS SRAM Document Title « 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Initial draft May 18th 1997 Design target 0.1 First revision

EPB018A5-70

Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580
Contextual Info: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180

RC TOY CAR CIRCUIT DIAGRAM

Abstract: toy car RC circuit diagram 13157 AMIC TECHNOLOGY 1315 A132000 A132000H RC Toy Car
Contextual Info: A132000 ADPCM SOUND CONTROLLER Preliminary Document Title ADPCM SOUND CONTROLLER Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue December 14, 1999 Preliminary December, 1999, Version 0.0 AMIC Technology, Inc. A132000 ADPCM SOUND CONTROLLER

Contextual Info: KM736V889 KM718V989 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Rev. No. Draft Date History Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 M odify DC characteristics Input Leakage Current test Conditions

Contextual Info: KM736V887 KM718V987 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document T itle 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision H is to ry Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Change DC Characteristics.

Contextual Info: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997

Contextual Info: BiCMOS SRAM KM616BV4002 Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993

sharp lcd 128 240

Abstract: A31W33128
Contextual Info: A31W33128 Series Preliminary LCD Controller-Driver Document Title LCD Controller-Driver Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 13, 2000 Preliminary 0.1 Error correction: December 7, 2000 Pad assignment & Boot capacitor connection:

Contextual Info: KM64BV4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: KM616V1002C/CL, KM616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Draft Data Remark Rev. 0.0 Initial Draft Aug. 5. 1998

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet format

H5TQ2G63DFR

Abstract: h5tq2g63
Contextual Info: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6A *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4th 1997 Preliminary 0.1 Revised - Change datasheet format

sharp lcd 128 240

Abstract: A31W33128
Contextual Info: A31W33128 Series Preliminary LCD Controller-Driver Document Title LCD Controller-Driver Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 13, 2000 Preliminary 0.1 Error correction: December 7, 2000 Pad assignment & Boot capacitor connection:

Contextual Info: KM736V849 KM718V949 PRELIMINARY 256Kx36 & 512KX18 Pipelined NfRAM Document Title 256Kx36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark June. 09. 1998 Preliminary 0.1 1. Changed DC parameters

Contextual Info: PRELIMINARY 256Kx18 Synchronous SRAM KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM Revision History Rev.No. History Draft Date 0.0 Initial draft May. 15. 1997 0.1 Modify power down cycle timing & Interleaved read timing, February. 11. 1998 Remark

Contextual Info: 204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6C *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark

H5TQ2G63DFR

Abstract: H5TQ2G63D
Contextual Info: 204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6C *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.1 / Sep. 2011 1 Revision History Revision No. History Draft Date Remark

Contextual Info: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993

H5TQ2G63D

Abstract: H5TQ2G63
Contextual Info: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die HMT312S6DFR6A *Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Jan. 2012 1 Revision History Revision No. History Draft Date Remark

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Tills 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet form at