MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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1090Mhz LNA
Abstract: GSM LNA AN797 GSM ic REP027 gsm amplifier schematic APP797 MAX2338 measurement rf gsm
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lnas, low noice amplifiers, mixer, rf, rfic, cdma, gsm, wireless, rf ics, front end ic Sep 07, 2001 APPLICATION NOTE 797 MAX2338 LNAs and Downconverters Optimized for GSM Front-End REP027 Abstract: The MAX2338 front-end IC is tuned to support GSM and DCS operation at 942MHz and 1842MHz. A
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MAX2338
REP027)
942MHz
1842MHz.
270MHz
com/an797
MAX2338:
AN797,
1090Mhz LNA
GSM LNA
AN797
GSM ic
REP027
gsm amplifier schematic
APP797
measurement rf gsm
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HJK-20VH
Abstract: No abstract text available
Text: Frequency Mixer HJK-20VH+ Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm 10.5 LO = +20dBm 9.5 LO = +21dBm Conversion Loss dB 10.0 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz
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HJK-20VH+
85MHz
19dBm
20dBm
21dBm
1520MHz
HJK-20VH
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HJK-20VH
Abstract: No abstract text available
Text: Frequency Mixer HJK-20VH+ Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm Conversion Loss dB 10.5 LO = +20dBm 10.0 LO = +21dBm 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz
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HJK-20VH+
85MHz
19dBm
20dBm
21dBm
1520MHz
HJK-20VH
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HJK-20VH
Abstract: TFK+BPW+84 diode+T2D+84
Text: Frequency Mixer HJK-20VH Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm Conversion Loss dB 10.5 10.0 LO = +20dBm 9.5 LO = +21dBm 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz
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HJK-20VH
85MHz
19dBm
20dBm
21dBm
1520MHz
HJK-20VH
TFK+BPW+84
diode+T2D+84
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HJK-20VH
Abstract: No abstract text available
Text: Frequency Mixer HJK-20VH Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm Conversion Loss dB 10.5 LO = +20dBm 10.0 LO = +21dBm 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz
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HJK-20VH
85MHz
19dBm
20dBm
21dBm
1520MHz
HJK-20VH
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Untitled
Abstract: No abstract text available
Text: 1090MHz SAW Filter 10MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT109002 www.sipatsaw.com Features � For RF SAW filter � Single-ended operation � Ceramic Surface Mount Package �
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1090MHz
10MHz
LBT109002
2002/95/EC)
1085-1095MHz)
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1090mhz
Abstract: JESD22-A114 PRA1000
Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit
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960-1215Mz
1025-1150MHz
1030-1090MHz
PRA1000
PRA1000
52-j1
1090mhz
JESD22-A114
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HV1011-1000L
Abstract: No abstract text available
Text: DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness
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HV1011-1000L
1090MHz.
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HVV1011-600
Abstract: hvvi 1090MHZ
Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor
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HVV1011-600
1030-1090MHz
HVV1011-600
HV800
MIL-STD-883,
EG-01-PO15X4
hvvi
1090MHZ
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1030-1090MHz
Abstract: 4884 SM200 DS01A
Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-035
1030-1090MHz,
HVV1011-035
429-HVVi
EG-01-DS01A
1030-1090MHz
4884
SM200
DS01A
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Untitled
Abstract: No abstract text available
Text: PLL350-1120Y PLL3501120Y5V NARROWBAND PHASELOCKED LOOP 5V NARROWBAND PHASE-LOCKED LOOP Package: PLL350, 20.32mm x 14.78mm x 3.91mm PLL Synthesizer Block Diagram Features Low Phase Noise / Fast Settling Time Reference In Data, Clock, Enable, LD RF Feedback
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PLL350-1120Y
PLL3501120Y5V
PLL350,
1090MHz
1150MHz
S1170
582in
154in)
DS120109
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HJK-20VH
Abstract: 22851 24251
Text: Frequency Mixer HJK-20VH+ Typical Performance Data RF IN (MHz) 400.1 460.1 520.1 580.1 640.1 700.1 760.1 820.1 880.1 940.1 1000.1 1060.1 1120.1 1180.1 1240.1 1300.1 1360.1 1420.1 1480.1 1540.1 1600.1 1660.1 1720.1 1780.1 1840.1 1900.1 1940.1 2000.1 2040.1
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HJK-20VH+
85MHz
HJK-20VH
22851
24251
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AM1011-075
Abstract: No abstract text available
Text: AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN
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AM1011-075
AM1011-075
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HJK-20VH
Abstract: No abstract text available
Text: Frequency Mixer HJK-20VH+ Typical Performance Data RF IN (MHz) 400.1 460.1 520.1 580.1 640.1 700.1 760.1 820.1 880.1 940.1 1000.1 1060.1 1120.1 1180.1 1240.1 1300.1 1360.1 1420.1 1480.1 1540.1 1600.1 1660.1 1720.1 1780.1 1840.1 1900.1 1940.1 2000.1 2040.1
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HJK-20VH+
85MHz
HJK-20VH
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1090mhz oscillator
Abstract: No abstract text available
Text: PLL350-1120Y PLL3501120Y5V NARROWBAND PHASELOCKED LOOP 5V NARROWBAND PHASE-LOCKED LOOP Package: PLL350, 20.32mm x 14.78mm x 3.91mm PLL Synthesizer Block Diagram Features Low Phase Noise / Fast Settling Time RF Feedback SPI Bus Compatible PLL IC
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PLL3501120Y5V
PLL350-1120Y
PLL350,
1090MHz
1150MHz
S1170
582in
154in)
DS120109
1090mhz oscillator
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AM1011-500
Abstract: M198
Text: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION
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AM1011-500
AM1011-500
M198
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AM1011-075
Abstract: No abstract text available
Text: AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN
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AM1011-075
AM1011-075
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AM1011-500
Abstract: M198
Text: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION
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AM1011-500
AM1011-500
M198
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HJK-20VH
Abstract: 3139 147 13251
Text: Frequency Mixer HJK-20VH Typical Performance Data RF IN (MHz) 400.1 460.1 520.1 580.1 640.1 700.1 760.1 820.1 880.1 940.1 1000.1 1060.1 1120.1 1180.1 1240.1 1300.1 1360.1 1420.1 1480.1 1540.1 1600.1 1660.1 1720.1 1780.1 1840.1 1900.1 1940.1 2000.1 2040.1
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HJK-20VH
85MHz
HJK-20VH
3139 147 13251
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AM1011-500
Abstract: M198 SGS-THOMSON 435
Text: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION
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AM1011-500
AM1011-500
M198
SGS-THOMSON 435
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AM1011-075
Abstract: No abstract text available
Text: AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN
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AM1011-075
AM1011-075
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HJK-20VH
Abstract: No abstract text available
Text: Frequency Mixer HJK-20VH Typical Performance Data RF IN (MHz) 400.1 460.1 520.1 580.1 640.1 700.1 760.1 820.1 880.1 940.1 1000.1 1060.1 1120.1 1180.1 1240.1 1300.1 1360.1 1420.1 1480.1 1540.1 1600.1 1660.1 1720.1 1780.1 1840.1 1900.1 1940.1 2000.1 2040.1
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HJK-20VH
85MHz
HJK-20VH
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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