RF FET CROSS REFERENCE Search Results

Contextual Info: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

BB305CEW

Abstract: 1SV70 BB305C
Contextual Info: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

Contextual Info: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

1SV70

Abstract: BB305M
Contextual Info: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

3SK319

Abstract: ADE-208-602 DSA003643
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK318

Abstract: DSA003643
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK318

Abstract: 3SK318YB-TL-E 3SK318YB-TL
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 Previous ADE-208-600 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

ADE-208-602

Abstract: 3SK319 3SK319YB-TL-E
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

1SV70

Abstract: BB305C Hitachi integrated circuit 1115 DSA003643
Contextual Info: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608D Z 5th. Edition Mar 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)

TM 1628 Datasheet

Abstract: 607D 1SV70 BB305M Hitachi integrated circuit 1115 DSA003643
Contextual Info: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607D Z 5th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)

Hitachi DSA0076

Abstract: 1SV70 BB405M
Contextual Info: BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)

HMF06100

Abstract: "Harris microwave"
Contextual Info: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

HMF-06100

Abstract: HMF06100
Contextual Info: HARRIS Mill S E M I C O N D U C T O R 4bE D • 43022^ OGGOlbS 2 ■ HMS -1 0 0 2 J H A R R I S H M F - 6 1 -200 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for SIX Band and Ku Band Applications * Large Cross Section Ti/Pt/Au Gates

LA1132

Abstract: DD01F LA1135
Contextual Info: SANYO SEMICONDUCTOR “cu vÔ» ,R P. ^ ~ r^ Ë |7 W 0 7 t DD01fi35 1 Wfÿz. • . t . 7 7 . / î î -.0 ^ r LAI 130 C IR C U IT D R A W IN G N o .a O O l m o n o l i t h i c l i n e a r IC AM TUNER SYSTEM FOR CAR RADIO Functions ■ RF amp. ■ Detector ■ Mixer

sfp450h

Abstract: rf voltmeter circuit diagrams SFP-450H BFU450CN la1135 YT-30007 Murata sfp450h 2SC930 E LA1135 diagram mitsumi coil rf
Contextual Info: Ordering number: EN1272E Monolithic Linear IC LA1135, 1135M AM Tuner System for Car Radios and Home Stereos Overview The LA1135 is a high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo antenna:

LA1170

Abstract: la1174 LA1175 3SK181 YT-20577 mitsumi variable coils IC LA1175 SIP16 FM stereo radio circuit la1140 LA1175M
Contextual Info: Ordering number : EN2276B Monolithic Linear IC LA1175, 1175M FM Front End For Car Radio, Home Stereo Applications Functions Package Dimensions • Double-balanced type MIX, PIN diode drive AGC output, MOS FET gate drive AGC output, keyed AGC, differential IF amplifier, buffer amplifier for oscillation,

LA1170

Abstract: 47K-074-124 3SK181 LA1175 LA1175M 967m IC LA1175 sumida ift coil YT-20577
Contextual Info: Ordering number : EN2276B Monolithic Linear IC LA1175, 1175M FM Front End For Car Radio, Home Stereo Applications Functions Package Dimensions • Double-balanced type MIX, PIN diode drive AGC output, MOS FET gate drive AGC output, keyed AGC, unit: mm differential IF amplifier, buffer amplifier for oscillation,

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIA2082F b ip o l a r l in e a r in t e g r a t e d c ir c u it ADVANCED RF PROCESSOR KIA2082F is an advanced RF processor for car tuners. An FM front end and AM tuner are internal parts are drastically reduced. Car tuners with both FM/AM require only the KIA2093F

JFET

Abstract: J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 2N4341
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

2SK1001

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIA2074F b ip o l a r l in e a r in t e g r a t e d c ir c u it ADVANCED RF PROCESSOR KIA2074F is an advanced RF processor for car tuners. An FM front end and AM tuner are internal parts are drastically reduced. Car tuners with both FM/AM require only the KIA2093F

IC 4047

Abstract: GAAS FET rf switch CROSS REFERENCE 0.5 mm pitch mlp 16 pin ceramic attenuator MHz diode EGP 30 data sheet of IC 4047 Driver IC 4047 GAAS FET CROSS REFERENCE HP MMIC ic 4047 datasheet
Contextual Info: PRODUCT FEATURE RF DIGITAL ATTENUATORS IN PLASTIC MLP PACKAGES B Fig. 1 Relative sizes of the five-bit and six-bit attenuators. ▼ roadband digital attenuators have been used to set power levels in RF and microwave circuits for many years. The concept is to electronically switch resistive T

KTC2712

Abstract: 2SK1001 jfet cascade trimer VU METER 32 led 1SV237 3SK195 KIA2082F KIA2093F fet cross reference
Contextual Info: KEC KIA2082F SEMICONDUCTOR TECH N ICAL DATA KOREA ELECTRONICS CO.,LTD. BIPOLAR LINEAR INTEGRATED CIRCUIT ADVANCED RF PROCESSOR KIA2082F is an advanced RF processor for car tuners. An FM front end and AM tuner are internal parts are drastically reduced. Car tuners with both FM/AM require only the KIA2093F

la1135

Abstract: transistor 2sc930 2sc536 sfp450h 2SC536 transistor toko 10k coils 2SC930 equivalent fm tuner mitsumi 6pin Mitsumi de RF SVC321
Contextual Info: Ordering number : EN1272G LA1135 LA1135M Monolithic Linear IC For Car Radios and Home Stereos AM Tuner System Overview The LA1135 and LA1135M are high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo antenna : loop applications.