RF MESFET S parameters
Abstract: MESFET S parameter C1C10 SP8T sp8t rf switch MESFET microwaves SP8T switch package ghz
Text: DESIGN FEATURE MMIC Switch GaAs MMIC Switch Is Designed Around Low-Capacitance A single-pole, eight-throw SP8T GaAs switch MESFETs uses low capacitance MESFETs to provide low insertion loss and input VSWR which is lower than competitive SP8Ts. Alan Noll
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28-pin
QSOP-28)
RF MESFET S parameters
MESFET S parameter
C1C10
SP8T
sp8t rf switch
MESFET
microwaves
SP8T switch package ghz
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Text: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection
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the working of IC 4047
Abstract: IC 4047 working ic 4047 IC 4047 BE data sheet of IC 4047 RF MESFET S parameters pindiode switch
Text: TUTORIAL DISTORTION IN VOLTAGE-VARIABLE ATTENUATORS W ith bandwidth a precious commodity, designers are faced with the challenge of providing increasingly larger amounts of information to a growing number of users. This information can be in many forms. Internet browsing, short messaging, e-mail and fax applications, to name just
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
transistors56L
MAX11014/MAX11015
2N3904
MAX11014BGTM
MAX11015BGTM
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Quality System
Abstract: GaN Amplifiers Wireless Amplifiers Hybrid Modules mwtinc GM-141526-H4
Text: MMIC Amplifiers High Performance/Quality MMIC Based on InGaP HBT, pHEMT, and Linear MESFET Technologies High Linearity, Fully Matched WiMax Power Amplifiers Military Screening Available on Hermetically Sealed Package Products Low Cost Commercial Products
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Untitled
Abstract: No abstract text available
Text: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
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RF MESFET S parameters
Abstract: TQTRX
Text: Production Released Process TQTRp TQTRx Advanced Passives MESFETFoundry Foundry Service Service GaAs &MESFET Passivation Via Metal 3 Metal 3 - 5 um Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • • Dielectric MIM Metal NiCr Metal 0 N+ Isolation Implant
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 55236 mesfet
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
MAX11014/MAX11015
2N3904
MAX11014BGTM
MAX11015BGTM
55236
mesfet
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GaAs MMIC Based Control Components with Integral Drivers
Abstract: RF MESFET S parameters DC bias of gaas FET MESFET MASW6010 GaAs MesFET Application note transistor mesfet
Text: GaAs MMIC Based Control Components with Integral Drivers M537 V4 Introduction This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the
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Untitled
Abstract: No abstract text available
Text: 19-3985; Rev 2; 9/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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625mV
MAX11014)
MAX11015)
12-Bit
20MHz
MAX11014/MAX11015
MAX11014/MAX11015
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4.1 amplifier circuit diagram
Abstract: class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Text: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
transistors56L
MAX11014/MAX11015
4.1 amplifier circuit diagram
class A push pull power amplifier
AC 5018
class B push pull power amplifier
mesfet datasheet by motorola
pn junction diode ideality factor
alarm clock sweep function ic
dxp 15
philips ic clock alarm 28 pins
STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Text: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
transistors56L
MAX11014/MAX11015
2N3904
MAX11014BGTM
MAX11015BGTM
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RF MESFET S parameters
Abstract: 1 transistor fm transmitter 5 watt "RF Power Amplifier" wireless mobile charging through microwaves UPP9401 GaAs MESFET amplifier Microsemi micronote 703 irfc20
Text: MicroNote 703 Silicon PIN Diode and GaAs MESFET Switches and Their Effects On Linearity of Digital Communications Systems William E. Doherty, Jr. Microsemi Corp. The RF sections of Analog FM and Digital Radios primarily differ in the required linearity. If the transmitter
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64-QAM
256-QAM
RF MESFET S parameters
1 transistor fm transmitter 5 watt
"RF Power Amplifier"
wireless mobile charging through microwaves
UPP9401
GaAs MESFET amplifier
Microsemi micronote 703
irfc20
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2N3904
Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 819d
Text: 19-3985; Rev 3; 11/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A
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MAX11014/MAX11015
MAX11014
MAX11015
625mV
2N3904
MAX11014BGTM
MAX11015BGTM
819d
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NE25337
Abstract: KR sot-143 NE25339 marking X_j sot u79 018
Text: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)
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NE25337
NE25339
NE253
b4E7414
NE25337,
Rn/50
KR sot-143
NE25339
marking X_j sot
u79 018
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ic pt 2389
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C rs s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m T> LOW NF: 1.1 dB TYP AT 900 MHz
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NE25118
E25118
OT-343
JO-15-0
24-Hour
ic pt 2389
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POW ER GAIN AND NOISE F IG U R E v s. DRAIN TO S O U R C E V O LTA G E V g s = 1 V , Id s = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz
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NE25339
NE253
1000pF
OT-143)
NE25339
NE25339-T1
NE25339U76
NE25339T1U76
NE25339U77
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz
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NE25139
NE251
OT-143)
NE25139
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
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DPDT SWITCHES
Abstract: dpdt rf switch
Text: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a
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SbM21
MA4GM400C-500
MA4GM400C
DPDT SWITCHES
dpdt rf switch
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m LOW NF: 1.1 dB TYP AT 900 MHz cn CL CD c 55 e Lgi = 1 .0 jim, Lg2 = 1.5 nm, Wg = 400 |xm
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NE25118
NE25118
OT-343
IS11I2
IS12I
1S12S21I
OT-343)
NE25118-T1
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e2513
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 P O W ER GA IN A N D N O IS E F IG U R E vs. D R A IN T O S O U R C E V O LT A G E SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER GPS LOW C r s s : 0.02 pF TYP A n m •o HIGH GPS: 20 dB (TYP) AT 900 MHz
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NE25139
NE251
E25139-T1
25139U
25139T1U
e2513
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE A S RF AMPLIFIER IN UHF TUNER NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE LOW CRSS: 0.02 pF TYP HIGH POWER GAIN: 20 d B (T YP ) A T 900 M Hz m *o LOW NF: 1.1 d B T Y P A T 900 M Hz
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NE25118
J01S-0
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RF7000
Abstract: RCA 836 network resistor L1C8
Text: TRF7000 POWER GaAs MESFET SLWS027- JULY 1996 • High Power Efficiency - at 35 dBm Output Power, 53% PAE Typical - at 29 dBm Output Power, 30% PAE Typical • 3.6-V and 4.8-V Operating Voltage for AMPS/NADC and GSM Cellular Telephone Applications Respectively
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TRF7000
SLWS027-
OT-89
F7000
1000pF
RF7000
RCA 836
network resistor
L1C8
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752 J 1600 V CAPACITOR
Abstract: RF MESFET S parameters MESFET S parameter network resistor P0* RF SOT89 752 C 1600 V CAPACITOR
Text: TRF7000 POWER GaAs MESFET ^ _ SLW S027-JULY 1996 • 3.6-V and 4.8-V Operating Voltage for AMPS/NADC and GSM Cellular Telephone Applications Respectively • High Power Efficiency - at 35 dBm Output Power, 53% PAE Typical
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TRF7000
SLWSQ27-JULY
OT-89
descripRF7000
SLWS027-JULY
752 J 1600 V CAPACITOR
RF MESFET S parameters
MESFET S parameter
network resistor
P0* RF SOT89
752 C 1600 V CAPACITOR
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