RF NPN POWER TRANSISTOR 2.5 GHZ Search Results

ericsson 20147

Abstract: PTB20147 RF TRANSISTOR 2.5 GHZ 20147 IEC-68-2-54
Contextual Info: e PTB 20147 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

IC 1820

Contextual Info: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

Contextual Info: e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

9434

Abstract: ADC 50 Ghz RF NPN POWER TRANSISTOR 2.5 GHZ z-Source
Contextual Info: e PTB 20180 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20078 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

Inmarsat

Contextual Info: e PTB 20078 2.5 Watts, 1525–1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

TE 1820

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um outp ut power, it may be used fo r both CW and PEP

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used fo r both CW and PEP

bvoe

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • • • The 20147 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output

18W transistor

Contextual Info: ERICSSON ^ PTB 20180 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Prelim inary Description Key Features The 20180 is a class AB, NPN, common emitter R F Power Transistor intended for 26 V D C operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output

LTE21009R

Contextual Info: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 250 mA

Contextual Info: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Gold Metalization • Emitter Ballasting Dim: A B C D E MAXIMUM RATINGS

bfy90

Contextual Info: BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB typ @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 • 1 Power Gain, GPE = 19 dB (typ) @ 200 MHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •

BFR180W

Contextual Info: BFR180W NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

bfr180

Abstract: 61V8
Contextual Info: BFR180 NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR180 NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR 180 NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz

transistor equivalent

Abstract: BFR 30 transistor VSO05561
Contextual Info: BFR 180W NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR180W

Abstract: VSO05561
Contextual Info: BFR180W NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

MRF914

Contextual Info: MRF914 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB typ @ f = 500 MHz • Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz 2 1 3 4 • High FT - 4.5 GHz (typ) @ IC = 20 mAdc

VPS05178

Contextual Info: BFP 180 NPN Silicon RF Transistor 3
For low-power amplifiers in mobile communication systems pager at collector 4 currents from 0.2 mA to 2.5 mA f T = 7 GHz 2
F = 2.1 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP180W NPN Silicon RF Transistor 3
For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz
F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!