RF POWER AMPLIFIER 100W Search Results

smd zener diode code 20w

Abstract: rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B DB-900-100W XPD57060S
Contextual Info: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over

Contextual Info: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency:9kHz～250MHz ■ Output Power :100W min. @1dB Comp. R&K-A009K251-5050R SPECIFICATIONS ＠＋25℃ OUTLINE DRAWING Frequency Range Small Signal Gain Gain Flatness Output Power

12v class d amplifier 100W

Contextual Info: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

ARF463A

Abstract: ARF463B VK200-4B rf power amplifier 100w VK200 ferrite choke
Contextual Info: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

12v class d amplifier 100W

Contextual Info: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

58nH

Abstract: 12v class d amplifier 100W
Contextual Info: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

ARF463A

Abstract: ARF463B VK200-4B
Contextual Info: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

arco mica trimmer

Abstract: ARF464A ARF464B VK200-4B
Contextual Info: ARF464A ARF464B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

Contextual Info: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

ARF463A/B

Contextual Info: ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

12v class d amplifier 100W

Contextual Info: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

100W POWER AMPLIFIER

Contextual Info: RF POWER AMPLIFIER • Class A Linear Solid-State Amplifier ■ Broadband Frequency :1MHz～1000MHz ■ Output Power :100W min. @1dB Comp. R&K-A001M102-5050R APPLICATION EMC(Electoromagnetic Compatibility) Accelerator Application Telecommunication Test and Measurement Application

12v class d amplifier 100W

Abstract: UNELCO
Contextual Info: ARF463A G ARF463B(G) D G S *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

ARF463A/rf power amplifier 100w

Contextual Info: ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. D Common Source G RF POWER MOSFETs TO-247 S N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been

F1021

Abstract: 100WATTS
Contextual Info: polyfet rf devices F1021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1072

Abstract: 100WATTS
Contextual Info: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1015

Abstract: 100WATTS
Contextual Info: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1066

Abstract: 100WATTS
Contextual Info: polyfet rf devices F1066 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1015 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

DAMH9172

Abstract: rf amplifier 100w 12 v 100w power amp rf power amplifier 100w 310 7x 12 v 100w amp
Contextual Info: MODEL NUMBER DAMH9172 Power Amplifier FEATURES • Operating Frequency: L-Band • RF Power: 200W/100W • Gain: 43/40dB • Pulse Width: 320 microseconds • Duty Cycle: 10% •Voltage: 48V/28V •Operating Temp.: -40 to +71ºC AMP UT RF ND +15 INP V DG TE

APT9403

Abstract: 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier
Contextual Info: APT9403 By: Kenneth Dierberger Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Presented at RF Expo East November 1994 Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Kenneth Dierberger Applications Engineering Manager

200w dc applications

Abstract: 200w power amplifier QPP-026 H10895 xemod
Contextual Info: QPP-026 200W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-026 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are