RF POWER TRANSISTOR NPN VHF Search Results

RF POWER TRANSISTOR NPN VHF Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

RF POWER TRANSISTOR NPN VHF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF262 Abstract: MRF264 MRF260 MRF261 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli cations in commercial and industrial equipment. NPN SILICO N	OCR Scan	MRF261 O-220AB MRF260 MRF262 MRF264 MRF261	PDF
56590653B Abstract: BH Rf transistor Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	56-590-65/3B MRF492 56590653B BH Rf transistor	PDF
inductor vk200 Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer Contextual Info: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.	OCR Scan	MRF238 inductor vk200 VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer	PDF
J476 Abstract: capacitor j476 NALCO Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package	OCR Scan	MRF2628 J476 capacitor j476 NALCO	PDF
2SC1947 equivalent Abstract: 2sc1947 RF Power Amplifiers 1P H transistor Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm	OCR Scan	2SC1947 175MHz 175MHz 2SC1947 2SC1947 equivalent RF Power Amplifiers 1P H transistor	PDF
2SC1729 Abstract: 1 w NPN EPITAXIAL PLANAR TYPE Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •	OCR Scan	2SC1729 175MHz 175MHz. T-31E 175MHz 1 w NPN EPITAXIAL PLANAR TYPE	PDF
NTE477 Contextual Info: NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz	Original	NTE477 NTE477 175MHz 175MHz,	PDF
2SC730 Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm	OCR Scan	2SC730 2SC730 150MHz	PDF
2SC730 Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.	OCR Scan	2SC730 2SC730 150MHz TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band	PDF
2SC2694 Abstract: DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2694 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •	OCR Scan	2SC2694 2SC2694 175MHz 175MHz, DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent	PDF
VHB125-28 Abstract: ASI10731 j105 transistor Contextual Info: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A	Original	VHB125-28 VHB125-28 ASI10731 j105 transistor	PDF
2SC2237 Abstract: 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •	OCR Scan	2SC2237 175MHz 175MHz. 175MHz 2SC2237 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •	OCR Scan	2SC2540 2SC2540 175MHz 175MHz,	PDF
VHB10-28F Abstract: transistor npn 1854 "RF Power Transistor" ASI10721 138175 Contextual Info: VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is an NPN RF power transistor designed for 138-175 MHz VHF communications applications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L FLG	Original	VHB10-28F VHB10-28F ASI10721 transistor npn 1854 "RF Power Transistor" ASI10721 138175	PDF

NTE488 Contextual Info: NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz	Original	NTE488 NTE488 175MHz	PDF
Fuji-SVEA Abstract: transistor RF 2SC1590 Contextual Info: 2SC1590 Silicon NPN Transistor RF Power Output The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. BEC WINTransceiver Features: High Power Gain: Gpe >/= 10dB VCC = 13.5V, PO = 6W, f = 175MHz	Original	2SC1590 2SC1590 136-174MHz 175MHz) 175MHz 100mA, 600mW, Fuji-SVEA transistor RF	PDF
2SC2055 Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC20S5 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES • High power gain: Gpe > 1 3 d B	OCR Scan	2SC20S5 2SC2055 175MHz --j25iJ 5k7k10k 2SC2055	PDF
RF POWER TRANSISTOR NPN Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46 Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •	OCR Scan	2SC3628 175MHz 175MHz. RF POWER TRANSISTOR NPN mitsubishi RF POWER TRANSISTOR Mitsubishi databook T-46	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dim ensions in m m FEATURES •	OCR Scan	2SC3628 2SC3628 175MHz 175MHz.	PDF
Contextual Info: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)	Original	NTE342 175MHz) NTE342 175MHz 100mA, 600mW,	PDF
BLH*3355 Abstract: BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor Contextual Info: BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure	Original	BLH3355 BLH3355) BLH*3355 BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor	PDF
NTE343 Contextual Info: NTE343 Silicon NPN Transistor RF Power Output PO = 14W, 175MHz Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)	Original	NTE343 175MHz) NTE343 175MHz 100mA,	PDF
NTE342 Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w Contextual Info: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)	Original	NTE342 175MHz) NTE342 175MHz 100mA, 600mW, 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w	PDF
NTE342 Contextual Info: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)	Original	NTE342 175MHz) NTE342 175MHz 100mA, 600mW,	PDF

RF POWER TRANSISTOR NPN VHF Search Results

RF POWER TRANSISTOR NPN VHF Result Highlights (5)

RF POWER TRANSISTOR NPN VHF Datasheets Context Search

MRF262

56590653B

inductor vk200

J476

2SC1947 equivalent

2SC1729

NTE477

2SC730

2SC730

2SC2694

VHB125-28

2SC2237

VHB10-28F

NTE488

Fuji-SVEA

2SC2055

RF POWER TRANSISTOR NPN

BLH*3355

NTE343

NTE342

NTE342