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    RF POWER TRANSISTOR SPICE Search Results

    RF POWER TRANSISTOR SPICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR SPICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN planar RF transistor

    Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor


    Original     		PDF BFG10; BFG10/X BFG10 NPN planar RF transistor BFG10 SOT143 C9 XN-71 transistor K 2937

    BLF278

    Abstract: blf278 rf amplifier power amplifier blf278 BLF278 mosfet VHF amplifier 217-797 blf278 rf power BLF278 VHF Power MOSFET 97233 99093 BLF278 spice
    Text: BLF278 VHF POWER MOSFET DESCRIPTION: The ASI BLF278 is a Dual Common Source N-Channel EnhancementMode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID 40 A VDSS


    Original     		PDF BLF278 BLF278 blf278 rf amplifier power amplifier blf278 BLF278 mosfet VHF amplifier 217-797 blf278 rf power BLF278 VHF Power MOSFET 97233 99093 BLF278 spice

    MLC850

    Abstract: 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification


    Original     		PDF BFG11; BFG11/X OT143 BFG11 SCD38 123055/1500/03/pp12 MLC850 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424

    Q62702-F1490

    Abstract: No abstract text available
    Text: BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 900MHz OT-323 Q62702-F1490 Dec-11-1996 Q62702-F1490

    RF NPN POWER TRANSISTOR 2.5 GHZ

    Abstract: Q62702-F1575 marking 17 sot343
    Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-343 Q62702-F1575 900MHz Jan-20-1997 RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1575 marking 17 sot343

    Q62702-F1500

    Abstract: No abstract text available
    Text: BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF 900MHz OT-343 Q62702-F1500 Dec-12-1996 Q62702-F1500

    Q62702-F1296

    Abstract: No abstract text available
    Text: BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF 900MHz OT-23 Q62702-F1296 Feb-04-1997 Q62702-F1296

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU580G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU580G OT223 BFU580G AEC-Q101 BFU590G

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101 BFU590QX

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU580Q BFU580Q AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590G OT223 BFU590G AEC-Q101

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590G OT223 BFU590G AEC-Q101 BFU590GX

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101

    Q62702-F1377

    Abstract: No abstract text available
    Text: BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF 900MHz OT-143 Q62702-F1377 Nov-22-1996 Q62702-F1377

    Untitled

    Abstract: No abstract text available
    Text: BFP136W NPN Silicon RF Transistor 3 • For power amplifier in DECT and PCN systems 4 • fT = 5.5GHz • Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP136W PAs


    Original     		PDF BFP136W VPS05605 OT343

    ic 7493

    Abstract: pin diagram of ic 7493 7493 74935 marking MD IC UA 1458 ic 4458 op amp ua 743 7493 pc SBFP450M
    Text: Ordering number : ENN7493 SBFP450M NPN Epitaxial Planar Silicon Transistor SBFP450M High-Frequency Medium-Output Amplifier, RF Driver / Power Amp Applications Features [SBFP450M] Side view Bottom view 0.15 0.3 3 0.25 2.1 • unit : mm 2213 4 2 1 1.3 0.07 •


    Original     		PDF ENN7493 SBFP450M SBFP450M] 24GHz 17GHz S21e2 ic 7493 pin diagram of ic 7493 7493 74935 marking MD IC UA 1458 ic 4458 op amp ua 743 7493 pc SBFP450M

    rf transistor mar 8

    Abstract: npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips
    Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT1Q3 plastic package. • High efficiency • Small size discrete power amplifier


    OCR Scan     		PDF BLT11 OT103. 711DflEL rf transistor mar 8 npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips

    bc337 TRANSISTOR equivalent

    Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103
    Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier


    OCR Scan     		PDF BLT10 OT103 MSB037 OT103. 711002b bc337 TRANSISTOR equivalent TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103

    npn C 1740

    Abstract: transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103
    Text: Philips Semiconductors Product specification NPN 2 G H z RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier


    OCR Scan     		PDF BLT11 7110flEb 0CH3034 npn C 1740 transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103

    silicon npn planar rf transistor sot 143

    Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
    Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base


    OCR Scan     		PDF BFG10; BFG10/X OT143 7110B2b OT143. 711Dfl2L silicon npn planar rf transistor sot 143 marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • f T = 5.5GHz • Gold metalization for high reliability ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-F1575 OT-343 fi235bDS 900MHz fl235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz OT-323 Q62702-F1490

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F=2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP180W Q62702-F1500 OT-343

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA * fT = 7G H z F = 2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1296 OT-23 D1220b7