RF POWER VERTICAL MOSFET 1000 W Search Results

z14b

Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

C13B

Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

marking c14a

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

marking c14a

Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

part marking information vishay HD 1

Abstract: l1a marking MRF372R5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

marking c14a

Abstract: marking R5b R5B transistor RO3010 MRF372 marking L4A C14A device L1a marking L1A marking on device MRF372R3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

NEM0899F01-30

Abstract: 13t transistor broadband impedance transformation
Contextual Info: High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 100 Watts PACKAGE OUTLINE F01 • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION 45˚ 45˚ G2

NEM0899F01-30

Abstract: 13t transistor broadband impedance transformation
Contextual Info: High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 100 Watts PACKAGE OUTLINE F01 • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION 45˚ 45˚ • HIGH DYNAMIC RANGE

J552

Abstract: NEM0995F01-30 j337 18AW
Contextual Info: High Power N-Channel Silicon MOSFET For Cellular Base Stations • HIGH OUTPUT POWER: 95 W • HIGH LINEAR GAIN: 12 dB • HIGH DYNAMIC RANGE • LOW INTERMODULATION DISTORTION • INTERNALLY MATCHED FOR THE 820-960 MHz BAND INPUT ONLY • PUSH-PULL STRUCTURE

RO3010

Abstract: C14A z14b
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

Z14b

Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

Vj3640Y

Abstract: transistor L1A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

Contextual Info: MTT 2001 Vdmos vs. LDMOS How to Choose Polyfet Rf Devices S. K. Leong Tuesday, May 22, 2001 1 Vdmos vs Ldmos • Technology - Process Structure Differences. • DC Characteristics • RF Characteristics – Gain, Stability, Ruggedness • Applications – HF, VHF, Low UHF, High UHF, PCS

uhf tv power transistor 250w

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF176GV MRF176GU The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push

til 701

Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
Contextual Info: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of

j130 fet

Abstract: MRF27SG
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND

ferroxcube toroids

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push

planar transformer theory

Abstract: MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz

MC34167 Application Notes

Abstract: MC34167T equivalent GMT 0223 1N5825 GMT-0223 diode 1N5825 mc33167 Mc34167 ac step-up transformer winding awg TDK t6
Contextual Info: MC34167, MC33167 5.0 A, Step-Up/Down/ Inverting Switching Regulators The MC34167, MC33167 series are high performance fixed frequency power switching regulators that contain the primary functions required for dc-to-dc converters. This series was specifically designed to be incorporated in step-down and

2204B

Abstract: 0-12V
Contextual Info: VRF191 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF191 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Motorola AN211

Abstract: motorola 6810 aN211 MOTorola atc 7515
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

Contextual Info: POLYFET R F DEVICES StE D • 724100^ aGQ0031 T - T -39-A T POLYFET RF DEVICES F1053 General Description PATENTED GOLD METALIZED SILICON RF POWER MOSFET Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown.