RF POWER W AN Search Results

DSSS transceiver

Abstract: CyFi protocol stack CY3210 CYRF7936 CyFi CHIPS TECHNOLOGIES IDE CY3271 Cypress touch CR2032 cy327
Contextual Info: C y F i L O W- P O W E R R F S O LUTIONS CYPRESS C y F i LOW-POWER RF SOLUTIONS RELIABLE. SIMPLE. POWER-EFFICIENT. C y F i LOW-POWER RF SOLUTIONS THE C y F i LOW-POWER RF SOLUTION PROVEN RF EXPERTISE OPTIMIZING WIRELESS RELIABILITY, RANGE, AND BATTERY LIFE

Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR Lead free and RoHS compliant* ■ High power RF transmission CHF11050CBF Series 400 W Power RF Flanged Resistor Absolute Ratings W

flange RF resistor 50

Abstract: resistor rohs
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR Lead free and RoHS compliant* ■ High power RF transmission CHF11050CBF Series 400 W Power RF Flanged Resistor Absolute Ratings W

flange RF resistor 50

Abstract: AL203 resistor rohs flange RF termination 50
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR Lead free and RoHS compliant* ■ High power RF transmission CHF11050CBF Series 400 W Power RF Flanged Resistor Absolute Ratings W

Contextual Info: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and

56590653B

Abstract: BH Rf transistor
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON

vk200* FERROXCUBE

Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range

powermax

Contextual Info: 8-Module C‐Band Systems SSPA Module Power Level 8-Module RF Output Power 16‐Module C‐Band Systems 7-Module Redundant RF Output Power SSPA Module Power Level 16-Module RF Output Power 15-Module Redundant RF Output Power Psat typical dBm (W)

2N3553 equivalent

Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz

78L08

Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544
Contextual Info: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,

NJM 78L08UA-ND

Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
Contextual Info: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

Motorola transistors MRF455

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —

MRF161

Abstract: J141 mosfet fet j141
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r

MHW1916

Contextual Info: MOTOROLA The RF Line MHW1916 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances 15 W 1930 – 1990 MHz RF POWER AMPLIFIER

Contextual Info: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER

Contextual Info: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER

MRF255 equivalent

Abstract: electrolytic capacitor 470 mrf255
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

capacitor 0805 avx

Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

MRF454 motorola

Abstract: ferroxcube 56-590-65 56590653B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF454 NPN Silicon RF Power TVansistor . . . designed for power am plifier applications in industrial, commercial and am ateur radio equipment to 30 MHz. • 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —

J476

Abstract: capacitor j476 NALCO
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package

te 2443 MOTOROLA transistor

Abstract: 1S2210 MOSFET 830 63 ng MRF171
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range

TPS9103

Abstract: MOSFET FOR AMP POWER SUPPLY SWITCHING depletion MOSFET 1 amp FET switch GaAs FET chip
Contextual Info: P O W E R S U P P L Y Product Features • Fully-integrated GaAs power amplifier power supply ■ 180-mΩ RDS on high side switch with logic-compatible input Power supply for GaAs power amplifiers Antenna RF Microphone VBAP VBAP Speaker DSP DSP RF RF CODEC

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Am plifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930-1990 MHz RF POWER AMPLIFIER