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    RF TRANSISTOR 10 GHZ LOW NOISE Search Results

    RF TRANSISTOR 10 GHZ LOW NOISE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR 10 GHZ LOW NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5015

    Abstract: 2SC5015-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation


    Original     		PDF 2SC5015 2SC5015-T1 PU10403EJ01V0DS 2SC5015 2SC5015-T1

    2SC5013

    Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    Original     		PDF 2SC5013 2SC5013-T1 2SC5013 2SC5013-T1 transistor r47 MARKINGR46 marking R46

    Untitled

    Abstract: No abstract text available
    Text: BFR750L3RH Linear Low Noise SiGe:C Bipolar RF Transistor • High gain ultra low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Provides outstanding performance for a wide range of wireless applications up to 10 GHz


    Original     		PDF BFR750L3RH AEC-Q101

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF 2SC3356 2SC3356-T1B 2SC3356 s2p 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356

    2SC3356

    Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
    Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF 2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356

    2SC3357-T1-A

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz


    Original     		PDF NE85634 2SC3357 NE85634-A PU10211EJ01V0DS 2SC3357-T1-A

    nec 2501

    Abstract: 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz


    Original     		PDF 2SC3357 2SC3357-T1 nec 2501 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1

    germanium transistor ac 128

    Abstract: BFR740L3RH RF NPN POWER TRANSISTOR C 10-12 GHZ BFR705L3RH BFR740L3
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFR740L3RH BFR74 germanium transistor ac 128 BFR740L3RH RF NPN POWER TRANSISTOR C 10-12 GHZ BFR705L3RH BFR740L3

    BFP740

    Abstract: ultra low noise RF Transistor
    Text: BFP740 3 NPN Silicon Germanium RF Transistor* 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740 VPS05605 OT343 BFP740 ultra low noise RF Transistor

    BFR740L3RH

    Abstract: BFR705L3RH GMA marking TP 180
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFR740L3RH BFR740L3RH BFR705L3RH GMA marking TP 180

    germanium transistor ac 128

    Abstract: BFR705L3RH BFR740L3RH WLAN chip
    Text: BFR740L3RH NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 a wide range of wireless applications 1 2 up to 10 GHz and more • Ideal for WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFR740L3RH germanium transistor ac 128 BFR705L3RH BFR740L3RH WLAN chip

    NEC 9712

    Abstract: 2SC5676
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA872TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA872TD S21e2 2SC5676) 2SC5676 PA872TD-T3 NEC 9712 2SC5676

    marking 17 sot343

    Abstract: marking R7s sot343
    Text: BFP740 3 NPN Silicon Germanium RF Transistor* 4 • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740 VPS05605 160cal marking 17 sot343 marking R7s sot343

    NEC TRANSISTOR MARKING CODE

    Abstract: date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF NE685M33 NE685M33 NE685M33-T3 PU10341EJ01V0DS NEC TRANSISTOR MARKING CODE date code marking NEC NEC MARKING CODE code marking NEC marking NEC rf transistor NEC Date code Marking nec npn rf NEC semiconductor

    Germanium power

    Abstract: BFR705L3RH TP5045
    Text: BFR705L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation 3 • Ideal for low power consumption LNA design 1 2 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more


    Original     		PDF BFR705L3RH Germanium power BFR705L3RH TP5045

    BFR705L3RH

    Abstract: No abstract text available
    Text: BFR705L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor for low current operation 3 • Ideal for low power consumption LNA design 1 2 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more


    Original     		PDF BFR705L3RH BFR705L3RH

    Untitled

    Abstract: No abstract text available
    Text: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F

    BFP740F

    Abstract: TSFP-4
    Text: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F BFP740F TSFP-4

    BFR740L3

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ MARKING CODE R7 RF TRANSISTOR germanium transistors NPN
    Text: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFR740L3 BFR740L3 RF NPN POWER TRANSISTOR C 10-12 GHZ MARKING CODE R7 RF TRANSISTOR germanium transistors NPN

    MARKING CODE R7 RF TRANSISTOR

    Abstract: No abstract text available
    Text: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 1 a wide range of wireless applications up to 10 GHz and more 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFR740L3 MARKING CODE R7 RF TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages


    Original     		PDF BFR750L3RH

    marking r8

    Abstract: No abstract text available
    Text: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages


    Original     		PDF BFR750L3RH marking r8

    transistor zs 35

    Abstract: Germanium power
    Text: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F Nov-19-2004 transistor zs 35 Germanium power