RF TRANSISTOR 10 WATT Search Results

RF NPN POWER TRANSISTOR 3 GHZ 200 watts

Contextual Info: e PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10

InMarSat power

Contextual Info: ERICSSON ^ PTB 20079 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10

"RF Power Transistor"

Abstract: PTB 20264
Contextual Info: e PTB 20264 10 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts power output, it may be used for both CW and PEP applications. Ion

ericsson rf

Contextual Info: ERICSSON ^ PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP

Contextual Info: e PTB 20008 10 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP

9434

Abstract: "RF Power Transistor"
Contextual Info: e PTB 20264 10 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, com m on em itter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minim um output power, it may be used for both CW and PEP

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

j327

Abstract: j327 transistor AFT09S282 transistor j326 J161 mosfet transistor j334 AFT09S282NR3 ATC600F4R7BT250XT AFT09S282N
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

Contextual Info: ERICSSON S PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • The 20008 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935-960 MHz frequency band. It is rated at 10 Watts minimum output power and may be

Contextual Info: ERICSSON ^ PTE 20264* 10 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor Description The 20264 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts m inim um ou tput power, it m ay be used fo r both CW and PEP

acrian RF POWER TRANSISTOR

Abstract: PU 391 acrian inc
Contextual Info: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

CRCW08052201FKEA

Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,

TRANSISTOR 618

Abstract: J22 transistor "RF Power Transistor" RF POWER TRANSISTOR RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 3 GHZ 200 watts RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR TRANSISTOR 200 GHZ MAPRST1030-1KS
Contextual Info: Advanced Datasheet Rev 17-06-2005 MAPRST1030-1KS Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:

capacitor 0805 avx

Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

ATT 47

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts

jmc 5201

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts

Contextual Info: ERICSSON í PTE 20264* 10 Watts, 1.8-1.9 GHz Cellular Radio RF Po w e r T ransistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts m inim um output power, it may be used for both CW and PEP

167-097

Abstract: 121-208 167-097-1 l 93059 61256 1617AM10 164512
Contextual Info: 1617AM10 10 Watts, 18 Volts, Class A Linear 1500 - 1800 MHz GENERAL DESCRIPTION CASE OUTLINE 55AT, STYLE 2 The 1617AM10 is a COMMON EMITTER, HIGH GAIN transistor capable of providing 10 Watts, P1dB., Class A, RF output power in the band 1500 - 1800 MHz. The transistor includes double input and output prematching for full

hatching machine

Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications

vk200 coil

Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON