RF TRANSISTOR 1500 MHZ Search Results

RF Transistor 1500 MHZ

Abstract: uhf tv power transistor npn UHF transistor rf transistor 320 RF TRANSISTOR TV power transistor 15 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN 2SC3121
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3121 DESCRIPTION •High Gain Bandwidth Product fT = 1500 MHz TYP. ·Excellent Linearity APPLICATIONS ·TV tuner, UHF oscillator applications. ·TV tuner, UHF converter applications.

167-097

Abstract: 121-208 167-097-1 l 93059 61256 1617AM10 164512
Contextual Info: 1617AM10 10 Watts, 18 Volts, Class A Linear 1500 - 1800 MHz GENERAL DESCRIPTION CASE OUTLINE 55AT, STYLE 2 The 1617AM10 is a COMMON EMITTER, HIGH GAIN transistor capable of providing 10 Watts, P1dB., Class A, RF output power in the band 1500 - 1800 MHz. The transistor includes double input and output prematching for full

48536

Abstract: 74166 data sheet IC 74166 16AM08 178003 162007 stk+142+150
Contextual Info: 16AM08 8 Watts, 18 Volts, Class A Linear 1500 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, STYLE 2 The 16AM08 is a COMMON EMITTER, HIGH GAIN transistor capable of providing 8 Watts , P1dB., Class A, RF output power in the band 1500 - 1700 MHz. The transistor includes double input and output prematching for full

Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

Contextual Info: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent

Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

Contextual Info: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

BLF647P

Abstract: 130005 power transistor
Contextual Info: BLF647P; BLF647PS Broadband power LDMOS transistor Rev. 1 — 3 August 2012 Objective data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

UT-090C-25

Abstract: BLF647P 130005 power transistor
Contextual Info: BLF647P Broadband power LDMOS transistor Rev. 2 — 12 April 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F 1500 The RF Line M icrowave Pulse Power Transistor Motorola Preferred Device Designed for 1025-1150 MHz pulse common base amplifier applications such as DME. • 500 W PEAK . 1025-1150 MHz MICROWAVE POWER TRANSISTOR

PTF141501A

Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
Contextual Info: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent

16AM12

Abstract: 535-1 TRANSISTOR C 3619
Contextual Info: 16AM12 12 Watts, 22 Volts, Class A Linear, 1600 MHz GENERAL DESCRIPTION CASE OUTLINE 55AT, STYLE 2 The 16AM12 is a COMMON EMITTER transistor capable of providing 12 Watts Class A, RF output power in the band 1500 - 1700 MHz. The transistor includes double input and output prematching for full broadband capability.

MW6S010NR1

Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

FERRITE BEAD 1000 OHM 0805

Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

ASI1010

Abstract: ASI10525
Contextual Info: ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min. at 10 W/ 1,000 MHz

ASI1005

Abstract: ASI10524
Contextual Info: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz

ASI1002

Abstract: ASI10523 class E power amplifier
Contextual Info: ASI1002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 2.0 W / 1,000 MHz

ASI1001

Abstract: ASI10522
Contextual Info: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz

ASI1020

Abstract: ASI10526
Contextual Info: ASI1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min.at 20 W / 1,000 MHz

1005 NPN

Abstract: ASI1005 ASI10524
Contextual Info: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz

ASI1010

Abstract: ASI10525
Contextual Info: ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min. at 10 W/ 1,000 MHz

ASI1020

Abstract: ASI10526 asi-1020
Contextual Info: ASI1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min.at 20 W / 1,000 MHz

ASI1001

Abstract: ASI10522
Contextual Info: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz