RF TRANSISTOR 320 Search Results

RF TRANSISTOR 320 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

RF TRANSISTOR 320 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor working principle Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron Contextual Info: RF Power Innovations 310 320-6160 AN3025 Transistor Mounting and Soldering Brett Kelley and Eric Hokenson 18 December 2003 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. 1. Solder pre-tin the transistor leads.	Original	AN3025 transistor working principle weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron	PDF
2SC5435 Abstract: 2SC5800 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 2SC5435 2SC5800	PDF
2SC5436 Abstract: 2SC5800 low vce transistor Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor	Original	PA863TS 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 low vce transistor	PDF
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TD 2SC5435, 2SC5800) 2SC5435 2SC5800 P15685EJ1V0DS	PDF
9904 120 13843 Abstract: 2SC5435 2SC5800 nec 4308 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor	Original	PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 9904 120 13843 2SC5435 2SC5800 nec 4308	PDF
j327 transistor Abstract: j327 J334 transistor Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1017N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1017NR3 This 80 W RF power LDMOS transistor is designed for wideband RF power amplifiers covering the frequency range of 720 to 960 MHz.	Original	MMRF1017N MMRF1017NR3 j327 transistor j327 J334 transistor	PDF
transistor D 5024 Abstract: RD00HVS1 8582 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz transistor D 5024 8582	PDF
mitsubishi top marking Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) mitsubishi top marking	PDF
RD09MUP2 Abstract: TRANSISTOR D 1765 720 L 0619 1788 Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 720 L 0619 1788	PDF
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101	PDF
RD00HVS1 Abstract: transistor 5024 transistor D 5024 TRANSISTOR 7916 Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz transistor 5024 transistor D 5024 TRANSISTOR 7916	PDF
TRANSISTOR D 1765 320 Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 320 RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 mitsubishi top side marking 1776 ER48 transistor mosfet 4425	PDF
8582 Contextual Info: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101 Oct2011 8582	PDF
Contextual Info: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME	Original	RD00HVS1 175MHz RD00HVS1 175MHz RD00HVS1-101	PDF

NTE475 Abstract: m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz Contextual Info: NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	NTE475 NTE475 300MHz. 100mA, 100MHz 100kHz 175MHz m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz	PDF
RD00HVS1 Abstract: RF Transistor s-parameter vhf T113 RD00HVS1-101 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz RF Transistor s-parameter vhf T113 RD00HVS1-101	PDF
1383 transistor Abstract: TRansistor C 101 RD00HVS1-101 4134 mosfet RD00HVS1 TRANSISTOR 1383 T06M transistor D 5024 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	RD00HVS1 175MHz RD00HVS1 175MHz 1383 transistor TRansistor C 101 RD00HVS1-101 4134 mosfet TRANSISTOR 1383 T06M transistor D 5024	PDF
LL1608-FHN2K Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K	PDF
micro strip line Abstract: RD09MUP2 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a (b) 7.0+/-0.2 0.2+/-0.05 RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) micro strip line	PDF
j 6815 transistor Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .	OCR Scan	RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor	PDF
HF30-28S Abstract: ASI10605 HF30-28F Contextual Info: HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L STUD	Original	HF30-28S HF30-28S 112x45° HF30-28F ASI10605 HF30-28F	PDF
transistor 1971 mitsubishi Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994 Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	OCR Scan	RD01MUS1 520MHz RD01MUS1 520MHz 0-48MAX OT-89 25deg TIO750 transistor 1971 mitsubishi MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994	PDF
AGR18060EF Contextual Info: Product Brief August 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18060E PB03-171RFPP PB03-105RFPP) AGR18060EF	PDF
2SC5800 Abstract: Transistor NEC K 3654 Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz	Original	PA873TD S21e2 2SC5800) 2SC5800 PA873TD-T3 2SC5800 Transistor NEC K 3654	PDF

RF TRANSISTOR 320 Search Results

RF TRANSISTOR 320 Result Highlights (5)

RF TRANSISTOR 320 Datasheets Context Search

transistor working principle

2SC5435

2SC5436

9904 120 13843

j327 transistor

transistor D 5024

mitsubishi top marking

RD09MUP2

RD00HVS1

TRANSISTOR D 1765 320

8582

NTE475

RD00HVS1

1383 transistor

LL1608-FHN2K

micro strip line

j 6815 transistor

HF30-28S

transistor 1971 mitsubishi

AGR18060EF

2SC5800