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    Untitled

    Abstract: No abstract text available
    Text: H A R R RFG40N10LE, RFP40N10LE, RF1S40N1 OLE, RF1S40N1OLESM IS semiconductor 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 40 A, 100V r D S O N = 0.040Q • 2kV ESD Protected


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N1 RF1S40N1OLESM O-247 RF1S40N10LE, RF1S40N10LESM O-263AB

    262E-9

    Abstract: No abstract text available
    Text: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 33e-3 00e-5) 98e-3 38e-6) 262E-9

    F40N10LE

    Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
    Text: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 33e-3 00e-5) 38e-6) F40N10LE 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n