| RFH35N10 |
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Toshiba
|
Power MOSFETs Cross Reference Guide |
|
Original |
PDF
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165.78KB |
67 |
| RFH35N10 |
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General Electric
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Power Mos Field - Effect Transistors N-Channel Enhancement - Mode Power Field - Effect Transistors |
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Scan |
PDF
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147.14KB |
3 |
| RFH35N10 |
|
General Electric
|
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 35A. |
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Scan |
PDF
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428.68KB |
8 |
| RFH35N10 |
|
Harris Semiconductor
|
Power MOSFET Data Book 1990 |
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Scan |
PDF
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231.85KB |
4 |
| RFH35N10 |
|
International Rectifier
|
RF and BUZ Series Power MOSFETs - N-Channel |
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Scan |
PDF
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40.6KB |
1 |
| RFH35N10 |
|
Unknown
|
Shortform Datasheet & Cross References Data |
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Short Form |
PDF
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78.19KB |
1 |
