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Catalog Datasheet	MFG & Type	PDF	Document Tags
SEMICONDUCTOR J598 Abstract: No abstract text available Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse	Original	PDF	RFHA1023 RFHA1023 DS120508 SEMICONDUCTOR J598
RFHA1023 Abstract: SEMICONDUCTOR J598 Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation	Original	PDF	RFHA1023 RFHA1023 DS110630 SEMICONDUCTOR J598
c11cf Abstract: No abstract text available Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse	Original	PDF	RFHA1023 RFHA10k DS120508 c11cf
Untitled Abstract: No abstract text available Text: RFHA1023 RFHA1023 225W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high	Original	PDF	RFHA1023 RFHA1023 DS131021
SEMICONDUCTOR J598 Abstract: rfha Text: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation	Original	PDF	RFHA1023A 15dBm RFHA1023A DS110622 SEMICONDUCTOR J598 rfha
RF565-2 Abstract: 440 transistors Text: RFMD. High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high-power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high-power density	Original	PDF	RF565-2 RF56age 50-operation 440 transistors
Integrated Synthesizers with Mixers Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services	Original	PDF	11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
RF565-2 Abstract: No abstract text available Text: RFMD . High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high power density	Original	PDF	RF565-2