SEMICONDUCTOR J598
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA1023
DS120508
SEMICONDUCTOR J598
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RFHA1023
Abstract: SEMICONDUCTOR J598
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023
RFHA1023
DS110630
SEMICONDUCTOR J598
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c11cf
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA10k
DS120508
c11cf
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Untitled
Abstract: No abstract text available
Text: RFHA1023 RFHA1023 225W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high
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RFHA1023
RFHA1023
DS131021
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SEMICONDUCTOR J598
Abstract: rfha
Text: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023A
15dBm
RFHA1023A
DS110622
SEMICONDUCTOR J598
rfha
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RF565-2
Abstract: 440 transistors
Text: RFMD. High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high-power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high-power density
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RF565-2
RF56age
50-operation
440 transistors
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Integrated Synthesizers with Mixers
Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services
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11F-B,
Integrated Synthesizers with Mixers
Digital Step Attenuators
3G/4G Power Amplifiers
CATV Amplifiers
CATV Hybrid Amplifier Modules
Gain Blocks
Linear Amplifiers
Low Noise Amplifiers
Variable Gain Amplifiers
WiFi Power Amplifiers
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RF565-2
Abstract: No abstract text available
Text: RFMD . High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high power density
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RF565-2
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