RFMD ENVELOPE TRACKING Search Results

RFG1M20180

Abstract: rfmd envelope tracking bpt06
Contextual Info: RFMD . High-Power GaN Broadband Power Transistors BPT RFMD’s high-power GaN broadband power transistors (BPTs) are optimized for commercial infrastructure, military communications, and general purpose amplifier applications in the 700MHz to 2.2GHz frequency band. This series of BPTs are therefore ideal for constant envelope, pulsed,

Contextual Info: RFG1M20090 1.8GHz to 2.2GHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to 2.2GHz  48V Operation Typical Performance

Contextual Info: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%

RF3225

Abstract: mobile phone antenna RF3225TR polar modulation
Contextual Info: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%

Contextual Info: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%

RF3225

Abstract: rAised cosine FILTER 3G Power Amplifier Module for GSM DCS1800 EGSM900 GSM1800 GSM900 PCS1900 RF3225TR7 polar architecture
Contextual Info: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%

Contextual Info: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed

RF3228

Contextual Info: RF3228 QUAD-BAND GMSK POLAR EDGE TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2         Applications     Battery Powered 3G

Contextual Info: RF3228 QUAD-BAND GMSK POLAR EDGE TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features         Applications   

RF3228

Abstract: Multiband RF Transceiver 2500 MHz RF3228PCBA-410
Contextual Info: RF3228 QUAD-BAND GMSK POLAR EDGE TXM, 2 RX AND 3 UMTS SWITCH PORTS Package Style: Module, 7.00 mm x 6.00 mm x 1.00 mm Features              EDGE Large Signal Polar Modulation Compatible Three High Linearity, Low Loss, UMTS Switch Ports

RF3171TR13

Abstract: GMSK wireless data transmission RF3171 DCS1800 DCS1900 EGSM900 GSM900 PCS1900 polar architecture 8PSK BLOCK DIAGRAM
Contextual Info: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2           20 W3 Bias and Power Control VBATT 5 VCTL4 6 Switch

Contextual Info: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features           20 W3 Bias and Power Control

RF3171TR13

Abstract: polar modulation
Contextual Info: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2           20 W3 Bias and Power Control VBATT 5 VCTL4 6 Switch

Contextual Info: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to

RFG1M20180

Abstract: ATC800B820JT
Contextual Info: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to

BW030

Contextual Info: RFG1M20090 RFG1M20090 1.8 GHz TO 2.2GHz 90 W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power>90W  Advanced Heat-Sink Technology 

ATC800B680JT

Contextual Info: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  

Contextual Info: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to

RF9810

Abstract: rf98
Contextual Info: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB     +25dBm Output Power TD-SCDMA High Efficiency at Rated POUT VBATT =3.5V GSM850/EGSM900=41% DCS1800/PCS1900=38% Integrated VBATT Tracking Circuit for Improved Switching Spectrum

Contextual Info: RF9810 QUAD BAND GPRS/LINEAR EDGE + 3.2V TDSCDMA MULTI-MODE TRANSMIT MODULE RFIN HB +25dBm Output Power TD-SCDMA  Proven PowerStar Architecture   Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions  Integrated VBATT Tracking Circuit

Contextual Info: RF7177 RF7177DualBand EGSM900/DC S1800 TxM with Integrated Receive SAW Filters DUAL-BAND EGSM900/DCS1800 TXM WITH INTEGRATED RECEIVE SAW FILTERS Package: Module 6.63 mm x 7.25 mm 1.0 mm Features          Single Module Placement SMPL

RF7178

Abstract: RF7178TR13 EGSM900 JESD22-A114 S1800 RF717 phone circuit rfmd envelope tracking
Contextual Info: RF7177 RF7177DualBand EGSM900/DC S1800 TxM with Integrated Receive SAW Filters DUAL-BAND EGSM900/DCS1800 TXM WITH INTEGRATED RECEIVE SAW FILTERS Package: Module 6.63 mm x 7.25 mm 1.0 mm Features          Single Module Placement SMPL

Contextual Info: RF3194 RF3194QuadBand GSM power amp module QUAD-BAND GSM POWER AMP MODULE Package: Module, 5.00mmx5.00mmx1.00mm Features  Power Margin for Flexible Tuning  GSM850 Efficiency: 55.5%  EGSM900 Efficiency: 57%  DCS1800 Efficiency: 51%  PCS1900 Efficiency: 53%

GMSK applications

Abstract: RF3194
Contextual Info: RF3194 RF3194QuadBand GMSK power amp module QUAD-BAND GMSK POWER AMP MODULE Package: Module, 5.00mmx5.00mmx1.00mm Features  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%  DCS1800 Efficiency: 49%  PCS1900 Efficiency: 51%