Untitled
Abstract: No abstract text available
Text: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 µA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 µA,
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2SA970
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0X29
Abstract: 0X48 GPIO22 F75121R
Text: F75121 F75121R/RG Dynamic VID Control + 8 GPIO Datasheet Release Date: July, 2007 Revision: V0.24P F75121 V0.24P July, 2007 F75121 F75121R/RG Datasheet Revision History Version Date Page Revision History 0.20P Apr/2003 0.21P Oct/2003 6 0.22P Jan/2004 5-7 Revise pin name and pin description
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F75121
F75121R/RG
F75121R/RG
Apr/2003
Oct/2003
Jan/2004
Dec/2005
July/2007
0X29
0X48
GPIO22
F75121R
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BS 4752 MCCB
Abstract: digitrip 310 time curve KEMA keur type 900 kema keur 60947-2 SWITCH KEMA keur t 85 12NES1200T Eaton DIGITRIP 3000 seltronic breaker Cutler-Hammer Digitrip RMS 310 rating plug EOP5T07
Text: Series G Molded Case Circuit Breakers 15 – 2500 Amperes for UL, CSA & IEC Applications July 2004 Frame Sizes EG through RG 15 – 2500 Amperes Vol. 1, Ref. No. [01] Description Page Standards Standards . . . . . . . . . . . . . . . . General Information . . . . . . . .
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PG01200002E
BS 4752 MCCB
digitrip 310 time curve
KEMA keur type 900
kema keur 60947-2 SWITCH
KEMA keur t 85
12NES1200T
Eaton DIGITRIP 3000
seltronic breaker
Cutler-Hammer Digitrip RMS 310 rating plug
EOP5T07
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Untitled
Abstract: No abstract text available
Text: SQ1912EEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested
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SQ1912EEH
AEC-Q101
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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si7386
Abstract: SI7386DP-T1-E3 Si7386DP
Text: Si7386DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Gen II Power MOSFET RoHS D PWM Optimized for High Efficiency COMPLIANT D New Low Thermal Resistance Power– PAKr Package with Low 1.07-mm Profile D 100 % Rg Tested
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Si7386DP
07-mm
Si7386DP-T1--E3
08-Apr-05
si7386
SI7386DP-T1-E3
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Untitled
Abstract: No abstract text available
Text: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQS404EN
AEC-Q101
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ963EP
AEC-Q101
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQJ401EP www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ401EP
AEC-Q101
2002/95/EC
SQJ401EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQJ970EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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PDF
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SQJ970EP
AEC-Q101
2002/95/EC
SQJ970EPelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQJ401EP www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ401EP
AEC-Q101
2002/95/EC
SQJ401EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ2315ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2315ES
OT-23
SQ2315ES-T1-GE3
2011/65/EU
2002/95/EC.
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SQA410EJ-T1
Abstract: No abstract text available
Text: SQA410EJ www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualified d • 100 % Rg and UIS Tested
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SQA410EJ
SC-70-6L-Single
AEC-Q101
2002/95/EC
SQA410EJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQA410EJ-T1
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Untitled
Abstract: No abstract text available
Text: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQ1421EEH
AEC-Q101
2002/95/EC
OT-363
SC-70
SC-70
SQ1421EEH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: SQJ401EP www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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PDF
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SQJ401EP
AEC-Q101
2002/95/EC
SQJ401EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQ1431EH www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ1431EH
AEC-Q101
2002/95/EC
OT-363
SC-70
SC-70
SQ1431EH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: SQS400EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQS400EN
AEC-Q101
2002/95/EC
SQS400EN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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67033
Abstract: No abstract text available
Text: SQJ431EP www.vishay.com Vishay Siliconix Automotive P-Channel 200 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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PDF
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SQJ431EP
AEC-Q101
2002/95/EC
SQJ431EP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
67033
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Untitled
Abstract: No abstract text available
Text: SQJ970EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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PDF
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SQJ970EP
AEC-Q101
2002/95/EC
SQJ970EPelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQ9407EY www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)
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SQ9407EY
AEC-Q101
2002/95/EC
SQ9407EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQJ456EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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SQJ456EP
AEC-Q101
2002/95/EC
SQJ456EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SQ2315ES
Abstract: No abstract text available
Text: SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ2315ES
AEC-Q101
2002/95/EC
O-236
OT-23)
OT-23
SQ2315ES-T1-GE3
2002/95/EC.
2002/95/EC
SQ2315ES
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Untitled
Abstract: No abstract text available
Text: M ic r o c h ip M T A 1 1 2 Intelligent Battery Management I.C. FEATURES BENEFITS • • • D ig ita lly in te g ra te s b a tte ry c h a rg e a n d d isch a rg e c u rre n t to p ro v id e an a ccu ra te s ta te o f ch a rg e in d ica tio n . •
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OCR Scan
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PDF
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DS40104B-page
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1SV147
Abstract: toshiba lable information
Text: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage
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OCR Scan
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1SV147
1SV147
toshiba lable information
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1SV228
Abstract: No abstract text available
Text: 1SV228 TOSHIBA 1 SV2 2 8 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rg : rg = 0.30 Typ. Small Package 2 .5 1. 5 + - + - 0.5 0.3 0 .25 0 .15 öo + I È3- MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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PDF
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1SV228
SC-59
10juA
f-100MHz
1SV228
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