RG 710 DIODE Search Results

CT60AM-18C

Abstract: CT60AM-18C-AD MICROWAVE SEMICONDUCTORS CORP
Contextual Info: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector

CT60AM-18C-AD

Abstract: CT60AM-18C
Contextual Info: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector

IG 2200 19

Contextual Info: Rectifier diodes Type Vrrm V r sm I f r u SM = V rrm If-SM / i2dt 10 m s, 10 ms, t. A V D 121 N D 121 K D 150 N 800 1200 1800 2000 800 1200 1800 2000 2800 3200 kA 360 1400 mû. 2.6 kA2s 33.8 D 255 N 1400 330 2.4 28.8 3600 420 3.7 68.5 t v, t., ir,i. 180°el

Q62901B0065

Abstract: Q62902B0152F222 Q62902B0156F222 A671 transistor lrtbg6sg Q65110A4187 osram LW Y3SG OSRAM Q62902B0152F222 Q65110A1890 Q62901B0062
Contextual Info: kakakak Light Emitting Diodes Lumineszenzdioden 75 Light Emitting Diodes .Lumineszenzdioden . 75 Safety Instructions .

Q62902-B152-F222

Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter

Q62901-B65

Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology

ct60am

Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V

Contextual Info: Bulletin 12076/A International S R e c t if ie r s d 453n / r s e r ie s FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 2.0 to 3.0 iis recovery tim e ■ High voltage ratings up to 2500V ■ High current ca p a bility

lg led tv electronic diagram

Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Contextual Info: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .

sd 1074 transistor

Abstract: transistor k 208 current limiting diodes fet transistor sd 1074
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes BUK9120-48TC GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER transistor in a plastic envelope

CM400DU-12NFH

Abstract: INDUCTION HEATING POWER SUPPLY
Contextual Info: MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE CM400DU-12NFH ¡IC . 400A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM200DU-12NFH

Abstract: INDUCTION HEATING POWER SUPPLY
Contextual Info: MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE CM200DU-12NFH ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM400DU-12NFH

Contextual Info: MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE CM400DU-12NFH ¡IC . 400A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE CM200DU-12NFH ¡IC . 200A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM300DU-12NFH

Abstract: INDUCTION HEATING POWER SUPPLY
Contextual Info: MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE CM300DU-12NFH ¡IC . 300A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM300DU-12NFH

Abstract: INDUCTION HEATING POWER SUPPLY
Contextual Info: MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE CM300DU-12NFH ¡IC . 300A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE CM300DU-12NFH ¡IC . 300A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack

CM150DU-24NFH

Contextual Info: MITSUBISHI IGBT MODULES CM150DU-24NFH HIGH POWER SWITCHING USE CM150DU-24NFH ¡IC . 150A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM100DU-24NFH HIGH POWER SWITCHING USE CM100DU-24NFH ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM300DU-24NFH HIGH POWER SWITCHING USE CM300DU-24NFH ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack

BUK9120-48TC

Abstract: SOT426
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes BUK9120-48TC GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

ct60am18b

Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A

CM300DU-24NFH

Contextual Info: MITSUBISHI IGBT MODULES CM300DU-24NFH HIGH POWER SWITCHING USE CM300DU-24NFH ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack

induction heating 30khz

Abstract: CM300DU-24NFH
Contextual Info: MITSUBISHI IGBT MODULES CM300DU-24NFH HIGH POWER SWITCHING USE CM300DU-24NFH ¡IC . 300A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack