RG-178 SPICE MODEL Search Results

Si4921DY

Contextual Info: SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7447DP

Contextual Info: SPICE Device Model Si7447DP Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3424DV

Contextual Info: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI3424DV

Contextual Info: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUP85N02-03

Contextual Info: SPICE Device Model SUB/SUP85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4911DY

Abstract: Si4921DY
Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4921DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application

SUB85N02-03

Contextual Info: SPICE Device Model SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3424DV

Contextual Info: SPICE Device Model Si3424DV N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si3424DV

Contextual Info: SPICE Device Model Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model SQJ942EP www.vishay.com Vishay Siliconix N-Channel Dual Asymmetric 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

4425b

Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
Contextual Info: Si4421DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.00875 @ VGS = - 4.5 V - 14 0.01075 @ VGS = - 2.5 V - 12 0.0135 @ VGS = - 1.8 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Game Station

SOT-563 SOT-666

Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
Contextual Info: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W

SI1473DH

Abstract: marking R5* sc-70 N2 SC70 tsop6 marking DC 74371 N2 SC70 6pin MSOP-8 marking AX PIN diode Pspice model V30114 EQUIVALENT OF TO252 PACK OF P-CHANNEL MOSFET WITH
Contextual Info: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 1.6 0.145 at VGS = - 4.5 V - 1.6 VDS (V) - 30 Qg (Typ) 4.1 nC • TrenchFET Power MOSFET APPLICATIONS RoHS • Load Switch for Portable Devices

C3028LD

Abstract: DMC3028LSD-13 DMC3028LSD J-STD-020D C3028
Contextual Info: A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Device Features and Benefits Q1 ID RDS on V(BR)DSS TA = 25°C 28mΩ @ VGS= 10V 7.1A

SMAJ33 spice

Abstract: marking JP diodes A13F
Contextual Info: SMAJ5.0 C A - SMAJ170(C)A 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Please click here to visit our online spice models database. Features • • • • • • 400W Peak Pulse Power Dissipation Glass Passivated Die Construction Unidirectional and Bidirectional Versions Available

rg-178 spice model

Contextual Info: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω

08055C104KAT2A

Contextual Info: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω

dmp3025

Abstract: P3025L DMP3025LK3 DMP3025LK3-13 J-STD-020D 20V P-Channel Power MOSFET high current p3025
Contextual Info: A Product Line of Diodes Incorporated DMP3025LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 25mΩ @ VGS= -10V -16.1A 41mΩ @ VGS= -4.5V

9-0-9 step down transformer

Contextual Info: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω

9-0-9 step down transformer

Abstract: step down transformer 909
Contextual Info: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω

K909

Abstract: 9-0-9 step down transformer
Contextual Info: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω

Contextual Info: THS3092 THS3096 www.ti.com SLOS428B – DECEMBER 2003 – REVISED FEBRUARY 2006 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω

Contextual Info: THS3092 THS3096 www.ti.com SLOS428A – DECEMBER 2003 – REVISED FEBRUARY 2004 HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS FEATURES • • • • • • • DESCRIPTION Low Distortion – 66 dBc HD2 at 10 MHz, RL = 100 Ω – 76 dBc HD3 at 10 MHz, RL = 100 Ω