RG-294 TECHNICAL INFORMATION Search Results

Contextual Info: Information DC axial fans Accessories DC centrifugal fans 238 246 248 251 254 AC centrifugal fans AC axial fans ACmaxx / GreenTech EC-Compact fans DC fans - specials Guard grilles Fan filter guard grilles Inlet nozzles Connection cables / Accessories Electrical connections

818d

Contextual Info: SKM 500GA124D Absolute Maximum Ratings Symbol Conditions IGBT ;+< + +@ ;!< B   ; SEMITRANSTM 4 Low Loss IGBT Modules SKM 500GA124D     Typical Applications  /   /         & ,+          &3    $ 14

Contextual Info: SKM 500GA124D Absolute Maximum Ratings Symbol Conditions IGBT ;+< + +@ ;!< B   ; SEMITRANSTM 4 Low Loss IGBT Modules SKM 500GA124D     Typical Applications  /   /         & ,+          &3    $ 14

diode A44

Abstract: LM 488
Contextual Info: SKM 500GA124D Absolute Maximum Ratings Symbol Conditions IGBT ;+< + +@ ;!< C   ; SEMITRANSTM 4 Low Loss IGBT Modules SKM 500GA124D     Typical Applications  /   /         & ,+          &3    $ 14

BY27-150

Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
Contextual Info: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor­ poration, which has been in existence over 50 years, has manufacturing

TQ-SMD 6pin

Abstract: photomos relay application AQV250 HF HC 6pin photomos relay AQY270
Contextual Info: TABLE OF CONTENTS Page 2 Relay Selector Chart Relay Technical Inform ation Definition of Relay Terminology. . 32 General Application G uidelines. . 36 Reliability. .49

FET 4900

Abstract: H5N1506P H5N1506P-E
Contextual Info: H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0100Z Rev.1.00 Jul.30.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings

Contextual Info: NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

Contextual Info: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: F-212 G E N E R A L POLICY m p rj The information contained in this catalog is accurate to the best of our knowledge. Due to technical progress, it is subject to change without notice. Application information is informational in nature and shall not be construed to warrant suitability of products for

H5N1506P

Abstract: H5N1506P-E PRSS0004ZE-A SC-65
Contextual Info: H5N1506P Silicon N Channel MOS FET High Speed Power Switching REJ03G0389-0200 Rev.2.00 Jul 03, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate 2. Drain (Flange)

Contextual Info: NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

MCT1458CP1

Abstract: mct1458cp MCT1458CD
Contextual Info: g MOTOROLA M CT1458, C In ternally Com pensated, High Perform ance Dual O perational A m plifier The MCT1458, C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external feedback components.

STRH40N6SY1

Abstract: JESD97 STRH40N6SY3
Contextual Info: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: PD- 97755 AUTOMOTIVE GRADE AUIRLL014N Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant

Contextual Info: PD- 97756 Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*

SMD M1A

Abstract: AUIRLL014N m1a smd package IRS 740
Contextual Info: PD- 97755 AUTOMOTIVE GRADE AUIRLL014N Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant

AN1977

Abstract: MHVIC915 MW4IC2020 MW4IC2230 MW4IC915 MWIC930 RF FET MW4IC2020MB 1021 "rf transistor"
Contextual Info: Freescale Semiconductor Application Note AN1977 Rev. 0, 10/2003 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

NTD4959N

Contextual Info: NTD4959NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

09nhg

Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH

09nhg

Abstract: 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG
Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

09nhg

Abstract: 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G
Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com

Contextual Info: TOP VIEW Not to Scale 8 +VS FB 2 7 OUT –IN 3 6 NC +IN 4 5 –VS 07040-001 PD 1 NC = NO CONNECT Figure 1. 8-Lead LFCSP (CP) ADA4857-1 FB 1 8 PD –IN 2 7 +VS +IN 3 6 OUT –VS 4 5 NC NC = NO CONNECT 07040-002 TOP VIEW (Not to Scale) Figure 2. 8-Lead SOIC (R)