RG-74 DIODE Search Results

IXFN66N50Q2

Contextual Info: HiPerFETTM Power MOSFET VDSS = 500 V ID25 = 66 A Ω RDS on = 74 mΩ ≤ 250 ns trr IXFN66N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions

in5241

Abstract: IN5242 IN5239 IN5237 IN5228 in5231 D1N5226 IN5227 IN5233 IN5229
Contextual Info: FAIRCHILD SEMICONDUCTOR 04 DE~| 3 4 ^ 7 4 3469674 FAIRCHILD SEMICONDUCTOR 0QE74T3 84D 2 74 93 D— 1N5226 through 1N5257 F A IR C H IL D 500 mW Silicon Zener. Diodes A S c h lu m b e rg e r C o m p a n y T-W -O PACKAGES ABSOLUTE MAXIMUM RATINGS Note 1 All Devices

EM 5135 diode

Abstract: 458a diode IN461A 1N459 equivalent T219 pn5139 pn5135 FDSOI500 equivalent diode for 1n457 0/EM 5135 diode
Contextual Info: FAIRCHILD SEMICO NDU CTO R 04 DE |34fc.citi74 0 0 H 7 4 S CI 4 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 74 59 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose Amplifiers

DL038D

Abstract: Scans-048 DL038 138A1 DSAGER00017 TGL DDR
Contextual Info: Vorläufige technische Daten In te rn a tion ale r V e rg le ich sty p : S N 74 L S 38 W 4 NA ND -Leistungsgatter mit offenem Kollektorausgang und je 2 Eingängen in L o w - Power-Schottky-Technologie Y - M jmessunqen in mm 14 13 12 ,j=L_e3L.CX^0 _0 _C1„£X„,

Contextual Info: rg Q uality I mcI uctor, I nc. High-Speed 3.3VCMC6 9_Bt x 4 Ports Multiple Bus Exchange wi th Bus Hoi d and Synchronous/ Asynchronous Controls q s 74 l c x h 9 o i in fo ar dmvAtio n FEATURES/BENEFITS DESCRIPTION • 5V-tolerant inputs and outputs • Bus Hold feature holds last active state during

Contextual Info: 4-1. Thyristors • T hyristo rs T r = 74 C 4 00 (1t u =15A) 500 T F 5 41 S -A (Rg* =470 0 ) 5.0 1.4 0.03 typ (1t u = 1 0 A ) 0.2 max 1.4 2.0 typ (|- m =5A ) 10 max - 4 0 to + 1 2 5 6 00 T F 5 61 S -A (Tc = 88 C ) 700 (R gk=470 0 ) TF3 21 M 200 300 TF3 41 M

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

Contextual Info: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

AOK20B60D1

Abstract: AOK20B60
Contextual Info: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

Diode 400V 20A

Contextual Info: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

Contextual Info: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

300GB

Contextual Info: SKM 300GB063D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter  7 4* 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 7 4* 8)

Contextual Info: SKM 300GB063D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter  7 4* 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 7 4* 8)

skim250gd128d

Contextual Info: SKiM 250GD128D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (9: 12 < !"    . */ !64" 0(

Contextual Info: SK 60 GB 128 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/"  ): $ % +, -.      

Contextual Info: SK 60 GAL 128 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/"  ): $ % +, -.      

diode 7449

Abstract: IC 7449 rg 504 diode 11aC126v1
Contextual Info: SKiiP 11AC126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$3  : ,$3  1 ' 20    

Contextual Info: AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

AOK15B60D

Contextual Info: AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

TO247C

Contextual Info: AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

Contextual Info: AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

semikron skiip 24 nab 125 t 12

Abstract: semikron skiip 81 AN 15 T
Contextual Info: SKiiP 37NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 ICRM VGES Tj IC • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

SEMIKRON SKIIP 11NAB126V1

Abstract: IC 7449
Contextual Info: SKiiP 11NAB126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ,$3  : ,$3  1 ' 20    

kvp 68A

Abstract: XMR5 xlr10
Contextual Info: DIODES DIODES, HIGH VOLTAGE, AXIAL LEAD Standard — Fast — Ultra-Fast Recovery CURRENT VOLTS RECOVERY ns SURGE(A) SERIES PAGE STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD 300 5 25-35 15 12 10 8 5 3W HV EF, EG, EH EK EM EP ER