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Catalog Datasheet	Type	Document Tags	PDF
AEC-Q100-003 Abstract: FM25W256 Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25W256 256Kb FM25W256 256-kilobit MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 AEC-Q100-003	PDF
FM25W256-Gtr Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process	Original	FM25W256 256Kb FM25W256 256-kilobit FM25W256-Gtr	PDF
Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process	Original	FM25W256 256Kb FM25W256 256-kserves	PDF
Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25W256 256Kb FM25W256 256-kilobit FM25W256, FM25W256-G A00002G1 RIC1039	PDF
FM25W256 Abstract: FM25W256GTR FM25W256-GTR microcontroller bus system "test bus" Contextual Info: Pre-Production FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25W256 256Kb FM25W256 256-kilobit MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 FM25W256GTR FM25W256-GTR microcontroller bus system "test bus"	PDF
Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25W256 256Kb FM25W256, FM25W256-G A00002G1 RIC1039 FM25W256	PDF
FM25W256-G Abstract: FM25W256 AEC-Q100-002 RIC1039 Contextual Info: Preliminary FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process	Original	FM25W256 256Kb MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 FM25W256 FM25W256-G AEC-Q100-002 RIC1039	PDF
FM25W256 Abstract: AEC-Q100-002 FM25W256-G Contextual Info: Preliminary FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process	Original	FM25W256 256Kb MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 FM25W256 AEC-Q100-002 FM25W256-G	PDF