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    RJK03P0DPA-00#J5A Renesas Electronics Corporation Built In Sbd N Channel Power MOSFET Visit Renesas Electronics Corporation

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    R07DS0904EJ0120

    Abstract: RJK03P0DPA
    Text: Preliminary Datasheet RJK03P0DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 25 A, 7.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0904EJ0120 Rev.1.20 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive


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