RJK06 Search Results
RJK06 Price and Stock
Renesas Electronics Corporation RJK0651DPB-00-J5MOSFET N-CH 60V 25A LFPAK |
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RJK0651DPB-00-J5 | Reel | 15,000 | 2,500 |
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RJK0651DPB-00-J5 | 12 Weeks | 2,500 |
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RJK0651DPB-00-J5 | 694 |
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Renesas Electronics Corporation RJK0658DPA-00-J5AMOSFET N-CH 60V 25A 8WPAK |
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RJK0658DPA-00-J5A | Reel | 6,000 | 3,000 |
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Renesas Electronics Corporation RJK0660DPA-00-J5AMOSFET N-CH 60V 40A 8WPAK |
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RJK0660DPA-00-J5A | Reel | 6,000 | 3,000 |
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Renesas Electronics Corporation RJK0659DPA-00-J5AMOSFET N-CH 60V 30A 8WPAK |
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RJK0659DPA-00-J5A | Reel | 6,000 | 3,000 |
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Renesas Electronics Corporation RJK0652DPB-00-J5MOSFET N-CH 60V 35A LFPAK |
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RJK0652DPB-00-J5 | Cut Tape | 4,780 | 1 |
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RJK06 Datasheets (18)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| RJK0601DPN-E0#T2 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 110A TO220 | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0602DPN-E0#T2 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 100A TO220 | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0603DPN-A0#T2 |
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MOSFET N-CH 60V 80A TO220ABA | Original | 519.43KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0603DPN-E0#T2 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 80A TO220 | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0629DPE-00#J3 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 85A LDPAK | Original | 109.73KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0651DPB-00#J5 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A LFPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0652DPB-00#J5 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0653DPB-00#J5 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 45A LFPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0654DPB-00#J5 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V LFPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0654DPB-WS#J5 |
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IGBT | Original | 130.86KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0655DPB-00#J5 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0655DPB-WS#J5 |
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IGBT | Original | 148.53KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0656DPB-00#J5 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A LFPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0656DPB-WS#J5 |
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IGBT | Original | 147.54KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| RJK0657DPA-00#J5A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 20A WPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0658DPA-00#J5A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A WPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0659DPA-00#J5A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A WPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0660DPA-00#J5A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A WPAK | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RJK06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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RJK0652DPBContextual Info: Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features • Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V) Pb-free Halogen-free |
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RJK0652DPB R07DS0077EJ0200 PTZZ0005DA-A RJK0652DPB | |
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Contextual Info: Preliminary Datasheet RJK0630JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0340EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 6.2 mΩ typ. Capable of 4.5 V gate drive |
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RJK0630JPE R07DS0340EJ0100 AEC-Q101 PRSS0004AE-B | |
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Contextual Info: Preliminary Datasheet RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching R07DS0341EJ0200 Rev.2.00 May 23, 2013 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive |
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RJK0631JPE R07DS0341EJ0200 AEC-Q101 PRSS0004AE-B | |
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Contextual Info: Preliminary RJK0629DPN N Channel Power MOS FET High-Speed Switching Use REJ03G1873-0100 Rev.1.00 Dec 15, 2009 Features • VDSS: 60 V • RDS on : 4.5 mΩ (Max) • ID: 85 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1. Gate |
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RJK0629DPN REJ03G1873-0100 PRSS0004AC-A O-220AB) | |
RJK0656DPBContextual Info: Preliminary RJK0656DPB Silicon N Channel Power MOS FET Power Switching REJ03G1882-0100 Rev.1.00 Nov 18, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 4.5 mΩ typ. (at VGS = 10 V) |
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RJK0656DPB REJ03G1882-0100 PTZZ0005DA-A RJK0656DPB | |
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Contextual Info: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features • High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline |
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RJK0602DPN-E0 O-220AB R07DS0653EJ0200 PRSS0004AG-A O-220AB) | |
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Contextual Info: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features • High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline |
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RJK0603DPN-E0 O-220AB R07DS0654EJ0100 PRSS0004AC-A O-220AB) | |
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Contextual Info: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features • High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline |
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RJK0603DPN-E0 O-220AB R07DS0654EJ0200 PRSS0004AG-A O-220AB) | |
RJK0654DPBContextual Info: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V) |
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RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB | |
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Contextual Info: Preliminary Datasheet RJK0631JPR R07DS0879EJ0300 Rev.3.00 Jul 24, 2013 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive |
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RJK0631JPR R07DS0879EJ0300 AEC-Q101 PRSS0003AD-A O-220FM) | |
RJK0654DPBContextual Info: Preliminary Datasheet RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching R07DS1052EJ0200 Previous: REJ03G1880-0100 Rev.2.00 Apr 09, 2013 Features • High speed switching Low drive current Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V) |
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RJK0654DPB R07DS1052EJ0200 REJ03G1880-0100) PTZZ0005DA-A RJK0654DPB | |
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Contextual Info: Preliminary Datasheet RJK0660DPA 60V, 40A, 5.1mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0346EJ0300 Rev.3.00 Apr 09, 2013 Features • High speed switching Low drive current High density mounting Low on-resistance |
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RJK0660DPA R07DS0346EJ0300 PWSN0008DE-A | |
RJK0659DPAContextual Info: Preliminary Datasheet RJK0659DPA 60V, 30A, 8.0mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0345EJ0300 Rev.3.00 Apr 09, 2013 Features • High speed switching Low drive current High density mounting Low on-resistance |
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RJK0659DPA R07DS0345EJ0300 PWSN0008DE-A RJK0659DPA | |
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Contextual Info: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive |
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RJK0631JPD R07DS0252EJ0300 AEC-Q101 PRSS0004ZD-C | |
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Contextual Info: Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 Previous: REJ03G1765-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Halogen-free |
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RJK0651DPB R07DS0076EJ0102 REJ03G1765-0101) PTZZ0005DA-A curr9044 | |
RJK0653DPBContextual Info: Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 Previous: REJ03G1760-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 10 V) Pb-free Halogen-free |
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RJK0653DPB R07DS0078EJ0102 REJ03G1760-0101) PTZZ0005DA-A cur9044 RJK0653DPB | |
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Contextual Info: Preliminary Datasheet RJK0628JPE Silicon N Channel MOS FET High Speed Power Switching R07DS0336EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 2.6 mΩ typ. Capable of 4.5 V gate drive |
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RJK0628JPE R07DS0336EJ0100 AEC-Q101 PRSS0004AE-B | |
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Contextual Info: Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V) |
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RJK0658DPA R07DS0344EJ0100 PWSN0008DC-B | |
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Contextual Info: Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 80 A, 5.2 m Features • High speed switching Low drive current Low on-resistance RDS on = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline |
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RJK0603DPN-E0 R07DS0654EJ0100 O-220AB PRSS0004AC-A O-220AB) | |
RJK0654DPBContextual Info: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V) |
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RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB | |
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Contextual Info: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features • High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline |
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RJK0602DPN-E0 R07DS0653EJ0100 O-220AB PRSS0004AC-A O-220AB) | |
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Contextual Info: Preliminary Datasheet RJK0601DPN-E0 R07DS0652EJ0200 Rev.2.00 Aug 24, 2012 N-Channel MOS FET 60 V, 110 A, 3.1 m Features • High speed switching Low drive current Low on-resistance RDS on = 2.5 m typ. (at VGS = 10 V) Package TO-220AB Outline |
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RJK0601DPN-E0 O-220AB R07DS0652EJ0200 PRSS0004AG-A O-220AB) | |
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Contextual Info: Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0100 Rev.1.00 Jul 27, 2012 N-Channel MOS FET 60 V, 100 A, 3.9 m Features • High speed switching Low drive current Low on-resistance RDS on = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline |
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RJK0602DPN-E0 O-220AB R07DS0653EJ0100 PRSS0004AC-A O-220AB) | |
RJK0632
Abstract: R07DS0342EJ0100 RJK0632JPD-00 RJK0632JPD
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RJK0632JPD AEC-Q101 R07DS0342EJ0100 PRSS0004ZD-C RJK0632 RJK0632JPD-00 RJK0632JPD | |