RJU60C6SDPE Search Results

Contextual Info: Preliminary Datasheet RJU60C6SDPE Single Diode Fast Recovery Diode R07DS0377EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = −100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 50 A)

Contextual Info: Preliminary Datasheet RJU60C6SDPE Single Diode Fast Recovery Diode R07DS0377EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = −100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 50 A)

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position

SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
Contextual Info: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output