Untitled
Abstract: No abstract text available
Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
|
Original
|
PDF
|
1SS400
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404002
|
Schottky
Abstract: No abstract text available
Text: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
|
Original
|
PDF
|
RB520S-30
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404003
Schottky
|
0710G
Abstract: RK 04 smd
Text: Data Sheet 0710G CRYSTAL OSCILLATORS OR-XBFXXXX-X Series HF/UHF SMD TCVCXO Ultra Low Phase Noise Rev. K Description: The OR-XBFXXXX Series of SMD temperature compensated, voltage controlled crystal oscillators TCVCXO , provides High and Ultra High Frequency with
|
Original
|
PDF
|
0710G
100Hz
0710G
RK 04 smd
|
EN50205
Abstract: No abstract text available
Text: Produktkatalog Relais mit zwangsgeführten Kontakten Produktkatalog - Relais mit zwangsgeführten Kontakten Auflage 12/2014 Herausgeber: ELESTA GmbH, Bad Ragaz, Schweiz Alle Rechte vorbehalten. Das Werk und seine Teile sind urheberrechtlich geschützt. Jede Verwertung in anderen als den gesetzlich zugelassenen Fällen bedarf deshalb der vorherigen
|
Original
|
PDF
|
CH-7310
D-04683
D-71672
EN50205
|
Untitled
Abstract: No abstract text available
Text: BAT721C / BAT721S SCHOTTKY BARRIER DOUBLE DIODES VOLTAGE 40 Volts CURRENT 200 mA FEATURES .006(0.15)MIN. • Low forward voltage .120(3.04) • Guard ring protected • Small plastic SMD package • Ultra high-speed switching • In compliance with EU RoHS 2002/95/EC directives
|
Original
|
PDF
|
BAT721C
BAT721S
2002/95/EC
OT-23,
MIL-STD-750,
2010-REV
|
NT SOT23
Abstract: No abstract text available
Text: BAT721C / BAT721S SCHOTTKY BARRIER DOUBLE DIODES VOLTAGE 40 Volts CURRENT 200 mA FEATURES .006(0.15)MIN. • Low forward voltage .120(3.04) • Guard ring protected • Small plastic SMD package • Ultra high-speed switching • In compliance with EU RoHS 2002/95/EC directives
|
Original
|
PDF
|
BAT721C
BAT721S
2002/95/EC
OT-23,
MIL-STD-750,
2010-REV
NT SOT23
|
Diode smd code nt
Abstract: 202-010
Text: BAT721C / BAT721S SCHOTTKY BARRIER DOUBLE DIODES 40 Volts CURRENT SOT-23 200 mA Unit：inch(mm) • Low forward voltage 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Guard ring protected • Small plastic SMD package • /
|
Original
|
PDF
|
BAT721C
BAT721S
OT-23
OT-23,
MIL-STD-750,
2010-REV
RB500V-40
Diode smd code nt
202-010
|
Untitled
Abstract: No abstract text available
Text: Cover and contents 22/11/01 2:04 pm Page 2 Precision Systems for the Electronics Bench SOLDERING, DESOLDERING AND REWORK SYSTEMS Precision Systems for the Electronics Bench WORLD HEADQUARTERS AND NORTH AMERICAN OFFICE 1530 O’BRIEN DRIVE • MENLO PARK • CA 94025 • USA
|
Original
|
PDF
|
MET-US-001
MX-500
|
smd diode marking LM
Abstract: IRLMS5703 702 mosfet smd marking Diode smd s6 95
Text: PD - 9.1413C IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
|
Original
|
PDF
|
1413C
IRLMS5703
smd diode marking LM
IRLMS5703
702 mosfet smd marking
Diode smd s6 95
|
PM5385
Abstract: smd l33 substitute D4D12 PM8610 34.368Mhz e2 e3 8448 bd234 NA-18
Text: 3: 16 AM ARROW 12xETEC ASSP Telecom Standard Product Data Sheet Preliminary ar y, 20 04 03 :1 PM5385 nd ay ,0 9F eb ru ARROW 12xETEC Data Sheet Preliminary Issue No. 3: January 2004 ed by da re en to u rk e yo fS ilic on ex pe rt Te ch no lo gi es Co .o n
|
Original
|
PDF
|
12xETEC
PM5385
12xETEC
PMC-2030120,
PM5385
smd l33 substitute
D4D12
PM8610
34.368Mhz e2 e3 8448
bd234
NA-18
|
Diode SMD ED 9a
Abstract: RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp
Text: PD 9.1414A IRLMS6702 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω To p V ie w Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
IRLMS6702
Diode SMD ED 9a
RK 73 SMD
marking SH SOT23 mosfet
IRLMS6702
LTA 702 N
MP 9141
MOSFET marking smd NU
702 mosfet smd marking
DIODE marking S6 96
smd diode marking mp
|
diode smd ED 84
Abstract: EE 16A transformer ze 003 driver DIODE marking S6 89 IRLMS5703 3V REGULATOR SOT-23 smd marking 702 sot23 MOSFET marking smd NU 20mH SMD INDUCTOR
Text: Previous Datasheet Index Next Data Sheet PD - 9.1413B IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
1413B
IRLMS5703
diode smd ED 84
EE 16A transformer
ze 003 driver
DIODE marking S6 89
IRLMS5703
3V REGULATOR SOT-23 smd
marking 702 sot23
MOSFET marking smd NU
20mH SMD INDUCTOR
|
Philips 12062R104K9B20D
Abstract: x7r100 0805CG101 philips 0805 2r 104 pf
Text: SMDTECHNOLOGY SMD Ceramic Multilayer Capacitors General o v e r v ie w - C l a s s 1 NPO NPO 25V Cap pF M 2 Microwave NPO 50 V 0402 0603 ! 0805! 1206 ' 1210 ! 1812i 2220 0805 1206 1210 1812! 2220 0805 i 1206 121011812 1206 1210 1812 0603 0805 1206 NPO 100 V
|
OCR Scan
|
PDF
|
1812i
Philips 12062R104K9B20D
x7r100
0805CG101
philips 0805 2r 104 pf
|
siemens V23026
Abstract: HS-180 siemens HS-180
Text: SIEMENS Miniature Relays P1 Product Information Miniature Relay P1 V23026 PCB relays - Pin or SMD for DC operation, polarised, monostable or bistable F e a tu re s V e rs io n s • Universal ultra m iniature relay with optimum capabilities - • Directly triggerable with T TL standard modules such as
|
OCR Scan
|
PDF
|
V23026
D-81359
A23001
11-P060-X-7600
siemens V23026
HS-180
siemens HS-180
|
|
|
SMD marking code 55A
Abstract: SMD CODE A71
Text: SMD 4MM SQUARE /S IN GLE-TUR N C E R M E T /IN D U S T R IA L /O P E N FRAME BOUBflS • Recommended for reflow solder processing ■ Unique cross-slot rotor design suitable for pick and place and autom atic adjustm ent equipm ent ■ Supplied in 12mm embossed tape, compatible with automatic assembly
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SERIES MCX Series MCX 50 Q 175 Q. Serie MCX 50 Q / 75 Q Compact microminiature coaxial connector with high reliability and long Kom pakter M ikrom iniatur-Koaxiatsteckverbinder hoher Zuveriassigkeit, service life for frequencies up to 6 GHz for 50 Q. version.
|
OCR Scan
|
PDF
|
29S101-S0OD3
D-84526
|
B410
Abstract: No abstract text available
Text: M MOTOROLA Military 54LS03 Quad 2-Input NAND Gate MPO mini ELECTRICALLY TESTED PER: MIL-M-38510/30002 AVAILABLE AS . LOGIC DIAGRAM \C fu] B4 A4 Y4 pj] ¡17] [TT] B3 A3 V3 1) JAN: JM38510/30002BXA 2) SMD: * 3) 883C: 54LS03/BXAJC [y | |T1 IT] -io 1 lio 1 Ll I
|
OCR Scan
|
PDF
|
MIL-M-38510/30002
54LS03
JM38510/30002BXA
54LS03/BXAJC
B410
|
Untitled
Abstract: No abstract text available
Text: M O T O R O L A Military 54LS08 Quad 2-Input Positive AND Gate ELECTRICALLY TESTED PER: M IL-M -38510/31004 LOGIC DIAGRAM Vcc nil 64 M V4 AVAILABLE AS: B3 A3 Y3 m nil nri N R m 1 JAN: JM38510/310048XA 2) SMD: * 3) 883C: 54LS08/BXAJC X = CASE OUTLINE AS FOLLOWS:
|
OCR Scan
|
PDF
|
54LS08
JM38510/310048XA
54LS08/BXAJC
|
Untitled
Abstract: No abstract text available
Text: • Chip LEDs ISEC1001 series Unicolor flat type Outline drawing A. 1-5 C a th o d e m a rk 0.9 1.3 (0.5) (B lu e ) ~" * * r T i O lO OJ — to ? 1 Lw l R e s in 2.5 C a th o d e m a rk ? S u b s tra te ISEC2002 series (Bicolor flat type) Outline drawing B
|
OCR Scan
|
PDF
|
ISEC1001
ISEC2002
SEC1003
ISEC2004
|
ci 7475
Abstract: K720 IPH8222 21G5D 80x34
Text: .S is r r - r « « * ^ : %!• ; S A W O DEVICE FOR COIVIMUIMICATIOIMEQUIPMENT II D ie le c tric F ilte r fo r C o m m u n ic a tio n T tii« a o r t e s &<* S M D d l d e e i r f c d e v i c e s a n a S M i t ¿818 W 3S S <C K « L. f c *3' S • « f f i
|
OCR Scan
|
PDF
|
TDH4TJP01
OF17323
O-147
43XB2X2
TDFI832D
F88A1RÂ
17X11X37
19X11X40
JAlA04D
ci 7475
K720
IPH8222
21G5D
80x34
|
6930 tube
Abstract: No abstract text available
Text: OPTICAL MOS RELA Y Taping specifications •Tube Package ! ' Tube shape j Devices in a tube Tubes in an outer box I ’ I Tube plate thickness:0.5 6 p in Tube and plug shape ^ ! Tube T r a n s p a re n t H a rd P V C DIP 50 2000 50 2000 Treated for electrical
|
OCR Scan
|
PDF
|
|
fuse smd code ps
Abstract: fuse smd code e SMD fuse FT
Text: ft>el 2410 Size Type SST Square Ceramic Surface Mount Slow Blow Fuse S S TA pr2013D HF RoHS 6 Compliant SST Series Fuse c usdE c € - Slow Blow - Small size,241OSMD - Wide range of current rating from 375mA to 7 A - Wide operating temperature range - Tape and Reel for auto-insert SMD process.
|
OCR Scan
|
PDF
|
pr2013D
241OSMD
375mA
481-D
fuse smd code ps
fuse smd code e
SMD fuse FT
|
Untitled
Abstract: No abstract text available
Text: EMI SUPPRESSION CHOKES SIM ID 03_ B 82432 Chip inductors for surface mounting SMD Rated current 0.055 to 0.6 A S IM ID 0 3 series (Siem ens M in ia tu re Ind uctors) M in ia tu re ch ip chokes, encapsulated (flam e -retard ant), w ith h ig h -te m p e ra tu re -re s is ta n t
|
OCR Scan
|
PDF
|
100kHz
100MHz
|
Untitled
Abstract: No abstract text available
Text: PHOTO-REFLECTOR m • Features tm ]. ^ ñ í^ ;í2 .6 5 L X 3.35 (W) x 0.95 CmSENSOR iH ) m m ä § 'm 1. D im e n s io n s : 2 .6 5 ( L ) x 3 .3 5 ( W ) x o .9 5 ( H ) m m . b e in g e x tr a th in a n d c o m p a c t in s iz e » s a rro 2. T h e fo c a l
|
OCR Scan
|
PDF
|
PR-20
|
