RK 01 SMD Search Results

Contextual Info: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on

Schottky

Contextual Info: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

Philips 12062R104K9B20D

Abstract: x7r100 0805CG101 philips 0805 2r 104 pf
Contextual Info: SMDTECHNOLOGY SMD Ceramic Multilayer Capacitors General o v e r v ie w - C l a s s 1 NPO NPO 25V Cap pF M 2 Microwave NPO 50 V 0402 0603 ! 0805! 1206 ' 1210 ! 1812i 2220 0805 1206 1210 1812! 2220 0805 i 1206 121011812 1206 1210 1812 0603 0805 1206 NPO 100 V

0710G

Abstract: RK 04 smd
Contextual Info: Data Sheet 0710G CRYSTAL OSCILLATORS OR-XBFXXXX-X Series HF/UHF SMD TCVCXO Ultra Low Phase Noise Rev. K Description: The OR-XBFXXXX Series of SMD temperature compensated, voltage controlled crystal oscillators TCVCXO , provides High and Ultra High Frequency with

EN50205

Contextual Info: Produktkatalog Relais mit zwangsgeführten Kontakten Produktkatalog - Relais mit zwangsgeführten Kontakten Auflage 12/2014 Herausgeber: ELESTA GmbH, Bad Ragaz, Schweiz Alle Rechte vorbehalten. Das Werk und seine Teile sind urheberrechtlich geschützt. Jede Verwertung in anderen als den gesetzlich zugelassenen Fällen bedarf deshalb der vorherigen

siemens V23026

Abstract: HS-180 siemens HS-180
Contextual Info: SIEMENS Miniature Relays P1 Product Information Miniature Relay P1 V23026 PCB relays - Pin or SMD for DC operation, polarised, monostable or bistable F e a tu re s V e rs io n s • Universal ultra m iniature relay with optimum capabilities - • Directly triggerable with T TL standard modules such as

Contextual Info: BAT721C / BAT721S SCHOTTKY BARRIER DOUBLE DIODES VOLTAGE 40 Volts CURRENT 200 mA FEATURES .006(0.15)MIN. • Low forward voltage .120(3.04) • Guard ring protected • Small plastic SMD package • Ultra high-speed switching • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: Super Fast Recovery Diode Single Diode mtmm o u t lin e Package ! E-pack DE5L60 U n ii Im m 600V 5A Feature • SMD • High Voltage • trr=50ns SMD ia U E E trr=50ns • • • • • PFC - \s wm.OA FA I 51l 6 Dill*rtidi M a in U se PFC(Power Factor Correction)

NT SOT23

Contextual Info: BAT721C / BAT721S SCHOTTKY BARRIER DOUBLE DIODES VOLTAGE 40 Volts CURRENT 200 mA FEATURES .006(0.15)MIN. • Low forward voltage .120(3.04) • Guard ring protected • Small plastic SMD package • Ultra high-speed switching • In compliance with EU RoHS 2002/95/EC directives

Diode smd code nt

Abstract: 202-010
Contextual Info: BAT721C / BAT721S SCHOTTKY BARRIER DOUBLE DIODES 40 Volts CURRENT SOT-23 200 mA Unit：inch(mm) • Low forward voltage 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Guard ring protected • Small plastic SMD package • / 

SMD marking code 55A

Abstract: SMD CODE A71
Contextual Info: SMD 4MM SQUARE /S IN GLE-TUR N C E R M E T /IN D U S T R IA L /O P E N FRAME BOUBflS • Recommended for reflow solder processing ■ Unique cross-slot rotor design suitable for pick and place and autom atic adjustm ent equipm ent ■ Supplied in 12mm embossed tape, compatible with automatic assembly

Contextual Info: SERIES MCX Series MCX 50 Q 175 Q. Serie MCX 50 Q / 75 Q Compact microminiature coaxial connector with high reliability and long Kom pakter M ikrom iniatur-Koaxiatsteckverbinder hoher Zuveriassigkeit, service life for frequencies up to 6 GHz for 50 Q. version.

B410

Contextual Info: M MOTOROLA Military 54LS03 Quad 2-Input NAND Gate MPO mini ELECTRICALLY TESTED PER: MIL-M-38510/30002 AVAILABLE AS . LOGIC DIAGRAM \C fu] B4 A4 Y4 pj] ¡17] [TT] B3 A3 V3 1) JAN: JM38510/30002BXA 2) SMD: * 3) 883C: 54LS03/BXAJC [y | |T1 IT] -io 1 lio 1 Ll I

Contextual Info: Cover and contents 22/11/01 2:04 pm Page 2 Precision Systems for the Electronics Bench SOLDERING, DESOLDERING AND REWORK SYSTEMS Precision Systems for the Electronics Bench WORLD HEADQUARTERS AND NORTH AMERICAN OFFICE 1530 O’BRIEN DRIVE • MENLO PARK • CA 94025 • USA

Contextual Info: • Chip LEDs ISEC1001 series Unicolor flat type Outline drawing A. 1-5 C a th o d e m a rk 0.9 1.3 (0.5) (B lu e ) ~" * * r T i O lO OJ — to ? 1 Lw l R e s in 2.5 C a th o d e m a rk ? S u b s tra te ISEC2002 series (Bicolor flat type) Outline drawing B

smd diode marking LM

Abstract: IRLMS5703 702 mosfet smd marking Diode smd s6 95
Contextual Info: PD - 9.1413C IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

ci 7475

Abstract: K720 IPH8222 21G5D 80x34
Contextual Info: .S is r r - r « « * ^ : %!• ; S A W O DEVICE FOR COIVIMUIMICATIOIMEQUIPMENT II D ie le c tric F ilte r fo r C o m m u n ic a tio n T tii« a o r t e s &<* S M D d l d e e i r f c d e v i c e s a n a S M i t ¿818 W 3S S <C K « L. f c *3' S • « f f i

6930 tube

Contextual Info: OPTICAL MOS RELA Y Taping specifications •Tube Package ! ' Tube shape j Devices in a tube Tubes in an outer box I ’ I Tube plate thickness:0.5 6 p in Tube and plug shape ^ ! Tube T r a n s p a re n t H a rd P V C DIP 50 2000 50 2000 Treated for electrical

PM5385

Abstract: smd l33 substitute D4D12 PM8610 34.368Mhz e2 e3 8448 bd234 NA-18
Contextual Info: 3: 16 AM ARROW 12xETEC ASSP Telecom Standard Product Data Sheet Preliminary ar y, 20 04 03 :1 PM5385 nd ay ,0 9F eb ru ARROW 12xETEC Data Sheet Preliminary Issue No. 3: January 2004 ed by da re en to u rk e yo fS ilic on ex pe rt Te ch no lo gi es Co .o n

Diode SMD ED 9a

Abstract: RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp
Contextual Info: PD 9.1414A IRLMS6702 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω To p V ie w Description Fifth Generation HEXFETs from International Rectifier

fuse smd code ps

Abstract: fuse smd code e SMD fuse FT
Contextual Info: ft>el 2410 Size Type SST Square Ceramic Surface Mount Slow Blow Fuse S S TA pr2013D HF RoHS 6 Compliant SST Series Fuse c usdE c € - Slow Blow - Small size,241OSMD - Wide range of current rating from 375mA to 7 A - Wide operating temperature range - Tape and Reel for auto-insert SMD process.

diode smd ED 84

Abstract: EE 16A transformer ze 003 driver DIODE marking S6 89 IRLMS5703 3V REGULATOR SOT-23 smd marking 702 sot23 MOSFET marking smd NU 20mH SMD INDUCTOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1413B IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: EMI SUPPRESSION CHOKES SIM ID 03_ B 82432 Chip inductors for surface mounting SMD Rated current 0.055 to 0.6 A S IM ID 0 3 series (Siem ens M in ia tu re Ind uctors) M in ia tu re ch ip chokes, encapsulated (flam e -retard ant), w ith h ig h -te m p e ra tu re -re s is ta n t

Contextual Info: PHOTO-REFLECTOR m • Features tm ]. ^ ñ í^ ;í2 .6 5 L X 3.35 (W) x 0.95 CmSENSOR iH ) m m ä § 'm 1. D im e n s io n s : 2 .6 5 ( L ) x 3 .3 5 ( W ) x o .9 5 ( H ) m m . b e in g e x tr a th in a n d c o m p a c t in s iz e » s a rro 2. T h e fo c a l