RL 205 DIODE Search Results

SCR 535 A

Abstract: CM521213 CM521613 SD-31 SD-32
Contextual Info: CM521213 CM521613 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/Diode POW-R-BLOK Modules 130 Amperes/1200-1600 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and

THER201

Abstract: THER203 THER204 THER205 THER206 THER208 MARK 206
Contextual Info: THER201~THER208 超快恢復整流二極管 Ultra-Fast Recovery Rectifier Diodes •特徵 Features 2.0A ● IF（AV） 50V~1000V ● VRRM ● trr①≤50ns, 70ns High reliability ● 高可靠性 ■外形尺寸和印記 Outline Dimensions and Mark 單位 Unit：mm

irrm1

Abstract: DSAUD0054565.txt TFR201
Contextual Info: TFR201~TFR207 快恢復整流二極管 Fast Recovery Rectifier Diodes •特徵 Features 2.0A ● IF（AV） ● VRRM 50V~1000V ● trr①≤0.15 s，0.25μs，0.5μs ● 高可靠性 High reliability ■用途 ● ■外形尺寸和印記 Outline Dimensions and Mark

Contextual Info: RL201 – RL208 2.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data        C

fotodiode

Abstract: foto transistor Fotodiode array ir SMD Dioden foto fotodiode array DPB 500
Contextual Info: iC-OR 5-FACH FOTODIODEN-ARRAY EIGENSCHAFTEN ANWENDUNGEN ♦ Monolitisch integrierte Fotodioden ♦ Hoher Gleichlauf ♦ Hohe Fotoempfindlichkeit im Bereich des sichtbaren Lichts und des nahen Infrarots ♦ Kleiner Dunkelstrom ♦ Diodenfläche 0.95x0.74mm2

MIT-5A116-U

Abstract: 406012 551A
Contextual Info: SLOTTED PHOTOINTERRUPTER MIT-5A116-U Description Package Dimensions The MIT-5A116-U consists of a Gallium Arsenide 4 1 infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.

FZK 105

Abstract: fzk 101 103 ma wj 62 RZ18B RZ18BR RZ39A RZ47A thomson diodes F147 tl 136
Contextual Info: V THOMSON-CSF DIVISION SEMICONDUCTEURS RZ6A — RZ18B •. ZENER DIODES DIODES ZENER P tot = 20 W 50 W silicon Zener diodes : 6 i V < Vz t nom < 180 V • Hermetically sealed metal according to normalization C CT U : F 10 and JE O EC DO-5. • Available with anode to case or cathode to

ZENER diode TESTING CIRCUIT

Abstract: 1N3154 1N3157A 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
Contextual Info: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient αVZ or TC herein for nominal voltages

201 Zener diode

Abstract: Forward Reference Diode precision reference zener diode 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
Contextual Info: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient α VZ or TC herein for nominal voltages

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

Contextual Info: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward

Metelics MSS20-141

Abstract: MSS20 C15 9 pin mss20.143 142-B10D
Contextual Info: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.

rl 205 diode

Abstract: MSW2051-205 MSW2050-205 rl diode 205 MSW2050-205-T MSW2051-205-EVAL
Contextual Info: Surface Mount PIN Diode SP2T Switches MSW2050-205 & MSW2051-205 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 158 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)

Contextual Info: TSL256 HIGHĆSENSITIVITY LIGHTĆTOĆVOLTAGE CONVERTER TAOS014 – JANUARY 2000 D D D D D D D D D PACKAGE FRONT VIEW High Sensitivity Low Noise (500 µVrms Typ) Rail-to-Rail Output High Power-Supply Rejection (>35 dB) Single Voltage Supply Operation Monolithic Silicon IC Containing

Contextual Info: Surface Mount PIN Diode SP2T Switches MSW2050-205 & MSW2051-205 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 158 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)

ERMA 110

Abstract: marking W4 marking W4 N marking l42
Contextual Info: 03/11/99 13:58:44 Page Diodes 80&-446-48SB->683800193Z C880193ZZ BightFftX BAT54 I A 1C IS SURFACE MOUNT SCHOTTK BARRIER DIODE Features Low Tum-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 Mechanical Data_

3 tfk 206

Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

MSS20.143-B10D

Abstract: mss20 b10d 050c1 MSS20, 143-B10D MSS-20 mss20,140 mss20,146 mss20.140 mss20.050
Contextual Info: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.

Contextual Info: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.

MOC205

Abstract: MOC206 MOC207 MOC208 207 opto soic
Contextual Info: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.

UTM 218 RESISTOR

Contextual Info: TPA0202 STEREO 2-W AUDIO POWER AMPLIFIER SLOS2Q5- FEBRUARY 1998 • Integrated Depop Circuitry • High Power with PC Power Supply - 2 W/Ch at 5 V into a 3-Cl Load - 800 mW/Ch at 3 V MUX • Fully Specified for Use with 3-& Loads • Ultra-Low Distortion - 0.05% THD+N at 2 W and 3 -Q. Load

MARKING 1F

Abstract: 1SV215 C25V toshiba 0,el
Contextual Info: 1SV215 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 5 CATV TUNING. Unit in mm • High Capacitance Ratio : C2V / C25V = 10.5 Typ. • Low Series Resistance : rs = 0.60 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

MOC205

Abstract: MOC205 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC205 MOC206* MOC207* MOC208* Small Outline Optoisolators [CTR *4 0 -8 0 % ] Transistor Output [CTR =83-125% ] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, In a surface mountable,

MOC205-M

Abstract: MOC206-M MOC207-M MOC208-M MOC207M
Contextual Info: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic