RL 255 DIODE Search Results
RL 255 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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CUZ8V2 |
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Zener Diode, 8.2 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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MUZ5V6 |
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Zener Diode, 5.6 V, USM |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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RL 255 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NJL6402R-2Contextual Info: NJL6402R-2 COBP Photo Diode for Front monitor GENERAL DESCRIPTION The NJL6402R-2 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time. |
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NJL6402R-2 NJL6402R-2 405nm/650nm/780nm) 405nm/650nm/780nm, 200MHz 780nm) 220MHz 650nm) 250MHz 405nm) | |
NJL6401R-3Contextual Info: NJL6401R-3 COBP High Speed Photo Diode GENERAL DESCRIPTION The NJL6401R-3 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to infrared light from the blue-violet light. The features are low wavelength dependence and fast fall-time. |
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NJL6401R-3 NJL6401R-3 405nm/650nm/780nm) 405nm/650nm/780nm, 250MHz 780nm) 300MHz 650nm) 350MHz 405nm) | |
Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT B Lead ( Pb ) Free Product – RoHS Compliant PD006-SMT(B) SMT Type PIN-Photodiode PD006-SMT(B) is a surface mount type PIN-photodiode featuring excellent responsibility of 6ns and high photocurrent. This PIN-photodiode consists of a large chip with 0.44x0.44mm active area mounted |
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PD006-SMT 44mmx0 | |
Contextual Info: ZENER DIODES 1 W ATT Z E N E R DIODE/DO-41 C A SE 7 O PERATIN G AND STO RA G E T EM PERA T U R E -65°Cto +175°C _ f g : _ fft.tlEB.fe &&&&% >% •& Maximum Zener PART Dynamic Impedances Maximum Reverse Current Forward Voltage |
OCR Scan |
DIODE/DO-41 DO-201 DO-41 Q007L | |
diode LR 105
Abstract: DIODE ZZ160 "bidirectional zener" do-35 ZZ110
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DO-35 BAV19 BAV20 BAV21 1N914 1N4148 1N4149 1N4150 1N4151 1N4448 diode LR 105 DIODE ZZ160 "bidirectional zener" do-35 ZZ110 | |
Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 600W S E R IE S TVS DIODES / DO-15 CASE 8 600W£ ?•] n n m JL "€i Breakdown Voltage v br TYP E P6KE6.8 P6KE6.8A P6KE7.5 P6KE7.5A P6KE8.2 P6KE8.2A P6KE9.1 P6KE9.1 A P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A |
OCR Scan |
DO-15 P6KE10 P6KE10A P6KE11 P6KE11A P6KE12 P6KE12A P6KE13 P6KE13A P6KE15 | |
y6 smd zener
Abstract: smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot Zener diode smd marking 23W smd y6 sot-23 smd code z16 Zener diode smd marking code 51 y smd zener diode code Y5 diode zener smd z5 sot-23 smd zener diode code y9
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OCR Scan |
OT-223 OD-87 OT-23 OT-223 OD-87 y6 smd zener smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot Zener diode smd marking 23W smd y6 sot-23 smd code z16 Zener diode smd marking code 51 y smd zener diode code Y5 diode zener smd z5 sot-23 smd zener diode code y9 | |
Contextual Info: TRANSIENT VOLTAGE SUPRESSORS 400W SURFACE MOUNT TVS DIODES / DO-214AC CASE 2 400W £ ÿi] _ iw>f t i r _ ÆA-fe-lfS Breakdown Voltage @ It V br TYPE TFMAJ5.0 TFMAJ5.0A TFMAJ6.0 TFMAJ6.0A TFMAJ6.5 TFMAJ6.5A TFMAJ7.0 TFMAJ7.0A |
OCR Scan |
DO-214AC TFMAJ10 TFMAJ10A TFMAJ11 TFMAJ11A TFMAJ12 TFMAJ12A TFMAJ13 TFMAJ13A TFMAJ14 | |
Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / 1.5KE CASE 10 1500W .Î »] "t,& Breakdown Voltage TYPE 1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A 1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A 1.5KE10 1.5KE10A 1.5KE11 1.5KE11A 1.5KE12 1.5KE12A 1.5KE13 1.5KE13A |
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5KE10 5KE10A 5KE11 5KE11A 5KE12 5KE12A 5KE13 5KE13A 5KE15 5KE15A | |
Contextual Info: RL201 – RL208 2.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data C |
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RL201 RL208 DO-15, MIL-STD-202, DO-15 | |
Contextual Info: Generic Optoisolator Specifications_ MCA230, MCA231, MCA255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington-Connected Phototransistor T h e MCA series co n sists o f a g alliu m a rsen id e, infrared em ittin g d io d e co u p le d w ith a silic o n p h o to -D a rlin g to n |
OCR Scan |
MCA230, MCA231, MCA255 | |
IN914
Abstract: in916 in914 diode in914b diode in914 1N914B carton box
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IN914, IN916 250mW IN914/9ecutive DO-35 IN914 in916 in914 diode in914b diode in914 1N914B carton box | |
1SS355Contextual Info: Diodes SMD Type High- Speed Switching Diode 1SS355 SOD-323 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Small surface mount type High switching speed. trr=2ns Typ. Good mountierbility,high surge resistance and reliability. +0.1 |
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1SS355 OD-323 100mA 1SS355 | |
diode sy 164 dl
Abstract: diode sy 164 02N2222 b6045
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OCR Scan |
MBR6035 MBR6045 MBR6045 diode sy 164 dl diode sy 164 02N2222 b6045 | |
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1SS353
Abstract: 1SS353 MARKING
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1SS353 OD-323 100mA 1SS353 1SS353 MARKING | |
smd dual diode code A7
Abstract: nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56 BAW56M smd diode code A7 BAW56T
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BAV756S; BAW56 BAV756S OT363 SC-88 BAW56 O-236AB BAW56M OT883 SC-101 smd dual diode code A7 nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56M smd diode code A7 BAW56T | |
1.5FMCJ220Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / DO-214AB CASE 4 1500W & ?>J t J t # #'] t Breakdown Voltage V TYPE 1.5FMCJ6.8 1.5FMCJ6.8A 1.5FMCJ7.5 1.5FMCJ7.5A 1.5FMCJ8.2 1.5FMCJ8.2A 1.5FMCJ9.1 |
OCR Scan |
DO-214AB 5FMCJ10 5FMCJ10A 5FMCJ11 5FMCJ11A 5FMCJ12 5FMCJ12A 5FMCJ13 5FMCJ13A 5FMCJ15 1.5FMCJ220 | |
DC93163Contextual Info: ISOCOM COMPONENTS ICPL0452 / ICPL0453 / ICPL0500 / ICPL0501 1. NC DESCRIPTION The ICPL0452, ICPL0453, ICPL0500 and ICPL0501 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode |
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ICPL0452 ICPL0453 ICPL0500 ICPL0501 ICPL0452, ICPL0453, 15kV/Î ICPL0453) DC93163 | |
Contextual Info: ISOCOM COMPONENTS ICPL2530, ICPL2531 DESCRIPTION The ICPL2530 and ICPL2531 dual channel devices each consists of an infrared emitting diode optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output transistor collector increases the speed |
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ICPL2530, ICPL2531 ICPL2530 ICPL2531 5000VRMS | |
PS7841-A15
Abstract: PS7841-A15-F3
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PS7841-A15 PS7841-A15 PS7841-A15-F3, 24-Hour PS7841-A15-F3 | |
Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 0# % i t l ' i i &n *^5^ 1500W SURFACE MOUNT TVS DIODES / /]V;Tsr"ta5 Breakdown Voltage V br TYPE TFMCJ5.0 TFMCJ5.0A TFMCJ6.0 TFMCJ6.0A TFMCJ6.5 TFMCJ6.5A TFMCJ7.0 TFMCJ7.0A TFMCJ7.5 TFMCJ7.5A TFMCJ8.0 TFMCJ8.0A TFMCJ8.5 TFMCJ8.5A |
OCR Scan |
TFMCJ10 TFMCJ10A TFMCJ11 TFMCJ11A TFMCJ12 TFMCJ12A TFMCJ13 TFMCJ13A TFMCJ14 TFMCJ14A | |
Si4816DYContextual Info: SPICE Device Model Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4816DY 0-to-10V 28-Jun-01 | |
DC93164
Abstract: icpl2631
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ICPL2630 ICPL2631 ICPL2631 10Mbit/s 10kV/Î ICPL2631) 5000Vrms Ground5/12/12 DC93164 DC93164 | |
Contextual Info: BAS16M3T5G Preferred Device Silicon Switching Diode Features • This is a Pb−Free Device MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA |
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BAS16M3T5G |