RL3 MARKING Search Results

MT44K32M18

Contextual Info: Advance‡ 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133)

MT44K16M36RB

Contextual Info: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns

576mb

Abstract: MT44K16M36PA-093E
Contextual Info: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns

MICRON BGA PART MARKING

Abstract: RTT120 MT44K64M18 MT44K RLDRAM 3 MT44K32M36
Contextual Info: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)

MICRON BGA PART MARKING

Abstract: MT44K64M18 MT44K32M36 RTT120 micron power 120w MT44K
Contextual Info: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)

Contextual Info: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns

Contextual Info: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns

Contextual Info: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns

MT44K32M36

Contextual Info: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRC MIN = 10ns (RL3-1600) – 1.25ns and tRC (MIN) = 12ns

MT44K32M36

Abstract: zq 405-MF
Contextual Info: 1.125Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.07ns and tRC MIN = 8ns (RL3-1866) – 1.07ns and tRC (MIN) = 10ns

MSDR

Abstract: mobile dram
Contextual Info: Mobile DRAM Stack Code Information 1/3 Last Updated : April 2009 K3XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 6~7. B-Port I/F & Density & Vcc & Org. Co de 2. Mobile DRAM Stack : 3 I/F Den VDD 1 00 3. Small Classification

RH A4 2A 250V

Abstract: oven rtd sensor IEC751 pa2009 PT100 ABB
Contextual Info: Data Sheet 100mm Process Recorder SS/SR100B_5 SR100B  3- or 6-trace recording on a 100mm chart – common time base for instant process comparison  High clarity liquid crystal display – for process value, units and channel tags  Universal process inputs

copper alloy C750

Contextual Info: Quartz Silica Powder CURRENT SENSE / LOW OHM CERAMIC ENCASED TYPE All Welded Construction RL SERIES LOW OHM / LOW INDUCTANCE Power Ceramic Encased Resistors Industrial Applications Tinned Copper Terminals Fire Proof Ceramic Housing Alloy Electrical Resistance Ribbon

HTR resistors

Abstract: resistor 0.1 Ohm 5w ceramic R005J
Contextual Info: www.htr-india.com Quartz Silica Powder CURRENT SENSE / LOW OHM CERAMIC ENCASED TYPE All Welded Construction RL SERIES LOW OHM / LOW INDUCTANCE Power Ceramic Encased Resistors Industrial Applications Tinned Copper Terminals Fire Proof Ceramic Housing Alloy Electrical

intersil DATE CODE MARKING

Abstract: intersil DaTE CODE ISL22346WMVEP MO-153-AC TB347 RL3 marking AC Potentiometers RW3 RW2 marking intersil small package DATE CODE MARKING intersil LOT TRACEABILITY
Contextual Info: ISL22346WMVEP Quad Digitally Controlled Potentiometers XDCP Data Sheet December 17, 2007 FN6624.0 Low Noise, Low Power I2C® Bus, 128 Taps Features The ISL22346WMVEP integrates four digitally controlled potentiometers (DCP) and non-volatile memory on a

168-FBGA

Abstract: 168FBGA Mobile SDRAM 152-FBGA marking code hf FBGA 9 x 12 package tray 152FBGA FBGA 8 x 14 package tray DDR2 x32 device marking code S4
Contextual Info: Mobile-SDR/DDR Code Information 1/3 Last Updated : July 2009 K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 12. Package - Mobile-SDRAM(M) B : 54-CSP(LF, HF) H : 90-FBGA_S(LF, HF) 2. DRAM : 4 3. Small Classification M : Mobile-SDRAM (Discrete Device for Mobile)

intersil DATE CODE MARKING

Abstract: MO-153-AC INTERSIL TRACEABILITY LOT PART MARKING
Contextual Info: ISL22346WM Quad Digitally Controlled Potentiometers XDCP Data Sheet November 11, 2011 FN6624.1 Low Noise, Low Power I2C Bus, 128 Taps Features The ISL22346WMVEP integrates four digitally controlled potentiometers (DCP) and non-volatile memory on a monolithic CMOS integrated circuit.

samsung K9 flash

Abstract: Samsung EOL 168FBGA samsung nor flash samsung s6 K4X1G163PC-FGC3 k4 MARKING CODE samsung K4 samsung cdram
Contextual Info: SAMSUNG's Digital World go contents DRAM ● ● ● ● Computing ❍ DDR3 Products ❍ DDR2 Products ❍ DDR Products ❍ SDRAM Products ❍ System Compatibility ❍ EOL Products Consumer ❍ Products Mobile ❍ Products ❍ EOL Products Graphic & Gaming

SCK 303

Contextual Info: X9401 Low Noise/Low Power/SPI Bus Data Sheet PRELIMINARY March 4, 2005 Quad, 64 Tap, Digitally Controlled Potentiometer XDCP FN8190.0 DESCRIPTION The X9401 integrates 4 digitally controlled potentiometers (XDCP) on a monolithic CMOS integrated microcircuit.

Contextual Info: X9400 Low Noise/Low Power/SPI Bus Data Sheet March 4, 2005 Quad Digitally Controlled Potentiometers XDCP FN8189.0 DESCRIPTION The X9400 integrates four digitally controlled potentiometers (XDCPs) on a monolithic CMOS integrated circuit. FEATURES • Four potentiometers per package

Contextual Info: Quartz Silica Powder All Welded Construction RL SERIES LOW OHM / LOW INDUCTANCE Power Ceramic Encased Resistors Industrial Applications Tinned Copper Terminals Fire Proof Ceramic Housing CURRENT SENSE / LOW OHM CERAMIC ENCASED TYPE Alloy Electrical Resistance Ribbon

LTC1068

Abstract: LTC1068-200 LTC1068-200CG LTC1068-25 LTC1068-50 LTC1068-50CG LTC1068CG
Contextual Info: LTC1068 Series Clock-Tunable, Quad Second Order, Filter Building Blocks U FEATURES DESCRIPTIO • The LTC 1068 product family consists of four monolithic clock-tunable filter building blocks. Each product contains four matched, low noise, high accuracy 2nd order switchedcapacitor filter sections. An external clock tunes the center

Contextual Info: All Welded Construction Quartz Silica Powder Tinned Copper Terminals Alloy Electrical Resistance Ribbon Fire Proof Ceramic Housing CURRENT SENSE/LOW OHM CERAMIC ENCASED TYPE RL SERIES LOW OHM / LOW INDUCTANCE Power Ceramic Encased Resistors Industrial Applications

Contextual Info: LTC1068 Series Clock-Tunable, Quad Second Order, Filter Building Blocks FEATURES • ■ ■ ■ U ■ DESCRIPTIO Four Identical 2nd Order Filter Sections in an SSOP Package 2nd Order Section Center Frequency Error: ±0.3% Typical and ±0.8% Maximum Low Noise per 2nd Order Section, Q ≤ 5: