RM1Z 12 Search Results

Contextual Info: SANKEN ELECTRIC CO., LTD. RM1Z １ Scope The present specifications shall apply to Sanken silicon diode, RM1Z. ２ Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Frequency Rectification，etc. Flammability: UL94V-0 (Equivalent)

RM1Z 08

Abstract: RM1ZM RM1Z 52 TA 1504
Contextual Info: DETRONTM RM1Z . RM1C General Purpose Plastic Rectifier Reverse Voltage 200 to 1000 V Forward Current 1.0A DO-41 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed:

RM1Z 52

Abstract: RM1ZM RM1Z 08 RM1Z 12 RM1A RM1Z RM-1ZM
Contextual Info: SIYU R RM1Z/RM1/RM1A/RM1B/RM1C 塑封普通整流二极管 General Purpose Plastic Rectifier 反向电压 200 - 1000V 正向电流 1.0A Reverse Voltage 200 to 1000 V Forward Current 1.0 A 特征 Features DO-41 •低的反向漏电流 Low reverse leakage

Contextual Info: SIYU R RM1Z/RM1/RM1A/RM1B/RM1C 塑封普通整流二极管 General Purpose Plastic Rectifier 反向电压 200 - 1000V 正向电流 1.0A Reverse Voltage 200 to 1000 V Forward Current 1.0 A 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage

RM1Z 12

Abstract: rectifier rbv-606 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50

PX15A13

Abstract: 2cp21 rm11z-rm11c PX 1N4007 1n4001-1n4007 trr PX10A02 RM3Z 2CP21-2CP29 DO-15 1N5400-1N5408
Contextual Info: 1.塑封整流二极管 序 型号 号 IF VRRM VF Trr A V V µs 外形 1A 50-1000V 1.1 R-1 2 1N4001-1N4007 1A 50-1000V 1.1 DO-41 3 1N5391-1N5399 1.5A 50-1000V 1.1

RM1Z 05

Abstract: 11-Series RM1A
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. EM 2 EM 2A EM 2B RM 1Z RM 1 RM 1A RM 1B RM 1C RM 11A RM 11B RM 11C IFSM (A) Tj (°C) 50Hz Half-cycle Sinewave Single Shot Others IR (H)

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. EM 2 EM 2A EM 2B RM 1Z RM 1 RM 1A RM 1B RM 1C RM 11A RM 11B RM 11C Tj （℃） IFSM （A） Tstg （℃） 50Hz Half-cycle Sinewave

R02Z

Abstract: SG5T RM11C SANKEN
Contextual Info: iBBWiMiHSNieipeiBiie i IODES mm • RECTIFIER DIODES V rm lo IpSM Vf V) (A) (A) Max. @ lF (V) SFPM-52 200 SFPM-54 400 SFPM-62 200 SFPM-64 0.9 30 1.0 1.0 45 0.98 ¡R (A) Vrm lo Ifsm VF ,<V> (A) (A) Max. @ lF Type No. (H A ) Max. (V) RM4Y 100 200 RM 4Z 200

TV horizontal Deflection Systems

Abstract: TV vertical section what are function of vertical section of tv function of tv deflection section tantal DATASHEET what are function of horizontal section of tv horizontal section of tv 1000uf25v Horizontal TV block RM1Z 12
Contextual Info: KA2133 1-CHIP DEFLECTION SYSTEM 1-CHIP DEFLECTION SYSTEM 16-DIPH-300 The KA2133 consists of a vertical system including an output function and a horizontal system in cluding an AFC function. It is for use in small size color TVs, B/W TV receivers and monitors.

RM1Z 12

Abstract: RBV-150C RBV-40C RM10 RM10A RM10B RM10Z
Contextual Info: Rectifier Diodes Package I F AV (A) Part Number IFSM (A) 50Hz ( ) is with Half-cycle Sinewave Single Shot Heatsink Axial 1000 Tstg (°C) IR (µA) VF (V) max IF (A) IR (H) (µA) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) 0.8 40 –40 to +150

SI-3522V

Abstract: 3522V SI-3132V 3052v 3122v SI3522V 3922V 3132V SI-3922V SI-3102V
Contextual Info: ●SI-3000V Series SI-3000V Series 3-Terminal, Low Dropout Voltage Dropper Type •Features • TO-3P package 3-terminal regulator • Output current: 2.0A • Low dropout voltage: VDIF≤1V at IO=2.0A • Built-in foldback overcurrent protection circuit

SI-3522V

Abstract: 3052v SI-3132V 3522V 3122v 3922v 3132V 3152v 3052v 5v 3102V
Contextual Info: ●SI-3000V Series SI-3000V Series 3-Terminal, Low Dropout Voltage Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Low dropout voltage: VDIF≤1V at IO=2.0A Built-in foldback overcurrent protection circuit

SI-3522V

Abstract: 3522V si3522v SI-3102V 3132V 3122V 3922V SI-3922v 3102V SI3132
Contextual Info: 1-1-1 Linear Regulator IC SI-3000V Series 3-Terminal, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings Ta=25°C • TO-3P package 3-terminal regulator Ratings Symbol Parameter SI-3052V • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)

3052p

Abstract: 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86
Contextual Info: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies

STR9000

Abstract: STR9005
Contextual Info: STR9000 Series Dropper Type — Low-Dropout Voltage Type Applications Features • F o r battery- operated VTR cameras, 8 mm cameras and automotive appliances • F o r various types of electronic equipment including micro computers, personal computers, floppy disk drives, CATV sets, VTRs, video disks,

AN5510

Abstract: fbt tv panasonic flyback tv panasonic AN5410
Contextual Info: : r U fc? IC AN5510 AN5510 T - \y I f I Wt V e rtic a l D efle c tio n O u tp u t C irc u it ^ /D escrip tion A N 5510 l± , Jj 0 i# T -rc I 2 J@ S & /T V v - U n it * m m t A N 5410, AN5411 £ o ä -t. —15.0 ± 0.3—15 . 6 m i n 3.6 ± 0.2 j: iS /F eatures

SI-3522V

Abstract: 3052V 3122V 3132v 3522v 3152V EQUIVALENT 3922V SI-3132V SI-3062V SI-3922v
Contextual Info: SANKENELECT^ 7 q q 0 7 m OOOlgbq HTP SI"3000V Series Dropper Type— Low-Dropout Voltage Features_ •Input/output voltage difference of less than 1 V during operation • Reduces power loss for electric equipment •S m a ll size with 2 A output

RM1Z 12

Abstract: RBV-408 RBV-608 RM10 RM10A RM10B RM10Z RM1Z 05
Contextual Info: Rectifier Diodes is with Half-cycle Sinewave Heatsink Single Shot VR = VRM max Rth (j- ) Rth (j-c) (°C/W) Mass (g) Fig. No. 0.8 40 –40 to +150 1.2 1.0 5 50 100 15 0.4 49 1.0 35 –40 to +150 0.97 1.0 20 100 100 17 0.3 48 EM 2B 1.2 80 –40 to +150 0.92

RBV-406M

Abstract: RM1Z 52 RBV-606 RBV-606H AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S
Contextual Info: 49 0.4 0.6 600 1.0 Center-tap 50 1.2 2.1 50 5.5 51 4.05 Bridge 51 6.45 • External Dimensions 2.9±0.1 50.0±1.0 7.2±0.2 100 22 0.13 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80 –40 to +150

RM1Z 12

Abstract: rm 4z RM1 A 45 RBV-602 AM01Z EM01Z FMM-22S FMM-32S FMM-32 RBV-4102
Contextual Info: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150

SI-3522V

Abstract: 3052V 3522V SI-3132V 3122v 3922V 3102V SI3522V SI-3062V 3132V
Contextual Info: ●SI-3000V Series SI-3000V Series 3-Terminal, Low Dropout Voltage Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Low dropout voltage: VDIF≤1V at IO=2.0A Built-in foldback overcurrent protection circuit

AN5510

Abstract: RM1Z 05 AN5410 SIL power package Scans-00159
Contextual Info: : r U fc? IC AN5510 AN5510 T- \y If I Wt 2 J @ S & /T V V e r tic a l D eflection Output Circuit ^ /D e sc rip tio n Un it * mm AN 5510 l±, Jj v - t 0 i#T -rc A N 5410, A N 5411 £ —15.0 ± 0.3— 15 . 6 m i n 3.6 ± 0 .2 j: : 0. 4 o ä-t. I iS /F e a tu r e s

3242P

Abstract: 3122p 3052p SI3052P SI-3122P SI-3152P SI-3000P SI-3052P SI-3242P SI3242P
Contextual Info: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies