RMBS PACKAGING Search Results
RMBS PACKAGING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
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TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR7404PU |
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N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H |
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RMBS PACKAGING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RMBS PackagingContextual Info: BSI, SG, RWM, RLP, RMB/RMBS Packaging www.vishay.com Vishay Sfernice Tape and Reel Packaging for Automatic Insertion Wirewound Resistors DIMENSIONS in millimeters • Tape and reel according to IEC 60286-1 and EIA296 Semi Precision SERIES 6±1 A Ribbon thickness |
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EIA296 26/RWM RMBS Packaging | |
BA100 diode
Abstract: BA100 22R00 MIL-R-26 R5000 RMBS
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08-Apr-05 BA100 diode BA100 22R00 MIL-R-26 R5000 RMBS | |
Sfernice RLP
Abstract: RWM 5 RMB 3 NF Tensile strength
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RS296D 20-Jun-02 Sfernice RLP RWM 5 RMB 3 NF Tensile strength | |
Contextual Info: RMB, RMBS Vishay Sfernice Moulded Precision Wirewound Resistors Axial Leads FEATURES • 0.75 Watt to 3 Watt at 25°C • NF C 83-210 • CECC 40201-005 • Low temperature coefficient • Low ohmic values • Excellent behavior against humidity • Electrical insulation |
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MIL-R-26 08-Apr-05 | |
Sfernice
Abstract: MIL-R-26 MIL-R-26E SFERNICE RW RMBS
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MIL-R-26 19-Mar-02 Sfernice MIL-R-26E SFERNICE RW RMBS | |
Contextual Info: RMB, RMBS Vishay Sfernice Moulded Precision Wirewound Resistors Axial Leads FEATURES • 0.75 Watt to 3 Watt at 25°C • NF C 83-210 • CECC 40201-005 • Low temperature coefficient • Low ohmic values • Excellent behaviour against humidity • Electrical insulation |
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MIL-R-26 19-Mar-02 | |
RMBS2
Abstract: RMB1
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2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 RMBS2 RMB1 | |
BA100Contextual Info: RMB, RMBS Vishay Sfernice Molded Precision Wirewound Resistors Axial Leads FEATURES • • • • • • • • • • 0.75 W to 3 W at 25 °C NF C 83-210 CECC 40201-005 RoHS Low temperature coefficient ≤ ± 50 ppm/°C COMPLIANT Low ohmic values 15 mΩ available |
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83-21s 08-Apr-05 BA100 | |
Contextual Info: RMB, RMBS Vishay Sfernice Molded Precision Wirewound Resistors Axial Leads FEATURES • • • • • • • • • • 0.75 W to 3 W at 25 °C NF C 83-210 CECC 40201-005 Low temperature coefficient ≤ ± 50 ppm/°C Low ohmic values 15 mΩ available Excellent behavior against humidity |
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2002/95/EC 11-Mar-11 | |
SFERNICE RW 16
Abstract: 83210-CECC RMB1
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2002/95/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 SFERNICE RW 16 83210-CECC RMB1 | |
Contextual Info: RMB, RMBS Vishay Sfernice Molded Precision Wirewound Resistors Axial Leads FEATURES • • • • • • • • • • 0.75 W to 3 W at 25 °C NF C 83-210 CECC 40201-005 Low temperature coefficient ≤ ± 50 ppm/°C Low ohmic values 15 mΩ available Excellent behavior against humidity |
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2002/95/EC 18-Jul-08 | |
RMB1Contextual Info: RMB, RMBS www.vishay.com Vishay Sfernice Molded Precision Wirewound Resistors Axial Leads FEATURES • 0.75 W to 3 W at 25 °C • NF C 83-210 • CECC 40201-005 • Low temperature coefficient ± 50 ppm/°C • Low ohmic values 15 m available • Excellent behavior against humidity |
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2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 RMB1 | |
RMBS0 SERIES
Abstract: MIL-R-26 R5000 83210-CECC
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2002/95/EC 18-Jul-08 RMBS0 SERIES MIL-R-26 R5000 83210-CECC | |
ba100Contextual Info: RMB, RMBS Vishay Sfernice Molded Precision Wirewound Resistors Axial Leads FEATURES • • • • • • • • • • 0.75 W to 3 W at 25 °C NF C 83-210 CECC 40201-005 Low temperature coefficient ≤ ± 50 ppm/°C Low ohmic values 15 mΩ available Excellent behavior against humidity |
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18-Jul-08 ba100 | |
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RCME
Abstract: sh 523 RTO20 RTO50 SFERNICE RW 58bsi SFERNICE RW 16 sfernice RSSD RPH 100 RSSD
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RTO20 RTO50 22-Feb-07 RCME sh 523 RTO50 SFERNICE RW 58bsi SFERNICE RW 16 sfernice RSSD RPH 100 RSSD | |
RambusContextual Info: SIEMENS LICENSES DIRECT RAMBUS TECHNOLOGY FOR DRAMs Leading European supplier of DRAMs to sample initial devices in 1998 Munich, Germany and Mountain View Calif., August 25, 1997 - Siemens AG and Rambus Inc. today jointly announced that Siemens has taken a license for Rambus Inc.’s high-bandwidth memoryinterface technology. Siemens will incorporate the technology into forthcoming DRAMs. |
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RESISTANCE RS71Y
Abstract: rb 57 sfernice
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VSE-DB0098-1002 RESISTANCE RS71Y rb 57 sfernice | |
EJTAG Tiny Tools CPLD
Abstract: TSMC eDRAM ATML U 932 compaq presario ATML 932 Trident plus broadcom Siemens lg Ni1000 temperature sensor Photobit PB-100 irf 3502 SUN HOLD MD-5
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