ROGERS 6010.5 Search Results

ROGERS 6010.5 Result Highlights (5)

Part	Manufacturer	Description
CLF1G0060-10	Rochester Electronics LLC	CLF1G0060-10 - 10W Broadband RF power GaN HEMT
75160-103-36LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical header, through hole, single Row,36 position, 2.54mm pitch
75160-101-07LF	Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded vertical header, through hole, single Row,7 position, 2.54mm pitch
51760-10300803AALF	Amphenol Communications Solutions	PwrBlade®, Power Supply Connectors, 3P 8S 3P STB Right Angle Receptacle.
51760-10202402AALF	Amphenol Communications Solutions	PwrBlade®, Power Supply Connectors, 2P 24S 2P STB Right Angle Receptacle.

ROGERS 6010.5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
j78 transistor Abstract: transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE Contextual Info: an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors	Original	PH1214-3L j78 transistor transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE	PDF
Rogers 6010.5 Abstract: epco 6010.5 T-33-J-S Contextual Info: n/A-con p h o 2 5E Sb4250S D QaDDSS? 311 MAP y p o MICROWAVE PULSED POWER TRANSISTOR PH1090 - 600S REV. PREUMINARY » M /A -C C M/A-COM PHI, INC. T-33'JS DESIGN CHARACTERISTICS • • • • • • Short Pulse Operation New High Efficiency Transistor Geometry	OCR Scan	Sb4250S PH1090 ATC100A 9BC155H050KDADFB, D--13 Rogers 6010.5 epco 6010.5 T-33-J-S	PDF
13MM Abstract: transistor Common Base configuration capacitor 50 uf Rogers 6010.5 Contextual Info: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry	Original	PH2931 PH2931-135s 13MM transistor Common Base configuration capacitor 50 uf Rogers 6010.5	PDF
Rogers 6010.5 Abstract: PH1214-20EL PH1214-25M 6010.5 transistor j39 Contextual Info: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	214-20EL PH1214-20EL PH1214-25M Rogers 6010.5 PH1214-20EL PH1214-25M 6010.5 transistor j39	PDF
b 595 transistor Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE	PDF
PH2731-20M Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz Contextual Info: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry	Original	PH2731-20M PI42731 PH2731-20M 3 w RF POWER TRANSISTOR 2.7 ghz	PDF
PT 4107 Abstract: transistor tt 2222 Rogers 6010.5 TT 2222 Contextual Info: M / A -C O fl P E S Z 1> H 0 SbMSEGS GOODSI^ bis • MAP sm e MICROWAVE PULSED POWER TRANSISTOR PH9612 - 75 REV. PRELIMINARY * & u / A -r < M/A-COM PHI, INC. T-33-/3 DESIGN CHARACTERISTICS • High Efficiency Transistor Geometry • Broadband 960 • 1215 MHz Operation	OCR Scan	PH9612 T-33-/3 MD1889 ATC100A 195D555X0050F PT 4107 transistor tt 2222 Rogers 6010.5 TT 2222	PDF
Rogers 6010.5 Contextual Info: b3E D 5t,422os nanaam ?T7 hap AVA MICROWAVE PULSED POWER TRANSISTOR PH1214-4.0M REV. A 09/09/91 — n/A-con p h M / A . r O M PHI, D M/A-COM INC. * o DESIGN CHARACTERISTICS • • • • • 100 uS Pulse Operation Broadband 1.2 - 1.4 G H z Operation Common Base Configuration	OCR Scan	422os PH1214-4 TT50M50A Rogers 6010.5	PDF
wacom Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM Contextual Info: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PH2729-8SM Sii255-24-f wacom 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM	PDF
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856 Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856	PDF
P77 transistor Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry	Original	ECG5016A PH1214- P77 transistor 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode	PDF
Di 762 transistor Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33 Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System	Original	PH1920-33 lN4245 73050258-S Di 762 transistor transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33	PDF
Transistor s41 Abstract: b 595 transistor linear accelerator L200 PH2856-160 transistor b 595 Contextual Info: an AMP cotn~any Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty 2.856 GHz PH2856-160 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Efficiency Interdigitated Geometry	Original	PH2856-160 Transistor s41 b 595 transistor linear accelerator L200 PH2856-160 transistor b 595	PDF
transistor j5 Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5 Contextual Info: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System	Original		PDF

PH2729-65M Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PH2729-65M Curren44) 2052-56X-02 PH2729-65M	PDF
transistor 81 110 w 65 Abstract: 13MM ATC100A PH3135-20M transistor 81 33 145J1 Contextual Info: MÙKOV, W an A M P company Radar Pulsed Power Transistor, 20W, 100\|is Puise, 10% Duty 3.1-3.5 GHz PH3135-20M V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	10Ojas PH3135-20M TT50M50A ATC100A transistor 81 110 w 65 13MM ATC100A PH3135-20M transistor 81 33 145J1	PDF
pin26 Abstract: J22 transistor PH1090-175L Contextual Info: Avionics Pulsed Power Transistor 175 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty PH1090-175L PH1090-175L Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor	Original	PH1090-175L pin26 J22 transistor PH1090-175L	PDF
Contextual Info: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C	OCR Scan	TT50M ATC100A 5bM220S	PDF
2052-5636-02 Abstract: TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor Contextual Info: yM Ü KO VI m an AM P company Radar Pulsed Power Transistor, 25W, 2jxs Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-25S V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PH3135-25S not81 TT50M50A ATC100A 2052-5636-02 TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor	PDF
transistor b 595 Abstract: ATC100A PH1819-45 Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System	Original	PHl819-45 transistor b 595 ATC100A PH1819-45	PDF
RF NPN POWER TRANSISTOR 3 GHZ 5w Contextual Info: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2\|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	OCR Scan	PH3135-5S TT50M50A ATC100A RF NPN POWER TRANSISTOR 3 GHZ 5w	PDF
b 595 transistor schematic Abstract: PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W Contextual Info: Wireless Power Transistor 15 Watts, 850-960 MHz PH0810-15 PH0810-15 Wireless Power Transistor 15 Watts, 850 - 960 MHz 1 Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP Common Emitter Configuration	Original	PH0810-15 1N4245) b 595 transistor schematic PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W	PDF
PH1516-100 Contextual Info: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching	Original	PH1516-100 5000pF lN5417 PH1516-100	PDF
C1016 transistor Abstract: transistor c1016 1J51 13MM ATC100A PH3135-90S c330 TRANSISTOR 1J512 Contextual Info: an A M P company Radar Pulsed Power Transistor, 90W, 2\|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-90S V2.00 Features • • • • • • • • .900 2 2 .8 6 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	OCR Scan	PH3135-90S TT50M50A ATC100A 1J512' C1016 transistor transistor c1016 1J51 13MM ATC100A PH3135-90S c330 TRANSISTOR 1J512	PDF

ROGERS 6010.5 Search Results

ROGERS 6010.5 Result Highlights (5)

ROGERS 6010.5 Datasheets Context Search

j78 transistor

Rogers 6010.5

13MM

Rogers 6010.5

b 595 transistor

PH2731-20M

PT 4107

Rogers 6010.5

wacom

TRANSISTOR zo 109 ma

P77 transistor

Di 762 transistor

Transistor s41

transistor j5

PH2729-65M

transistor 81 110 w 65

pin26

2052-5636-02

transistor b 595

RF NPN POWER TRANSISTOR 3 GHZ 5w

b 595 transistor schematic

PH1516-100

C1016 transistor