RP23 Search Results

RP2364E

Contextual Info: K D B @ [H NMOS 64 Kbit MASK ROM (8,192 word x 8 b it RP2364E • GENERAL D E SC R IP TIO N PIN C O N FIG UR A TIO N (T op view) The R P 2 3 6 4 E is static NMOS R ead O nly M em ory organ­ ized as 8 ,1 9 2 w ords b y 8-bits and operate from a single +5V

Contextual Info: 4ÖE D • 774^0 DDDISÜb =175 « P C H T-Ìé~l3 -/S ’ KKhLlMllNAKY It RICOH CORP/ ELECTRONIC ■ f E K -0 4 2 -S 9 II NMOS IMbit MASK ROM RP231028 13 10 7 2 word X 8 bit The RP231028 is static NMOS read only memory I PIN C O N FIG U R A TIO N (TOP VIEW )

RP23128E

Contextual Info: RICOH CORP/ ELECTRONIC 54E D • It 7744^0 OOOSOflb 2bG « P C H EKM -8-8807 NMOS 128kbit MASK ROM 1 6 ,3 8 4 w o rd x 8bit — RP23128E ■ PIN CONFIGURATION (Top view) G EN ER A L D ESCR IPTIO N T h e R P 2 3 1 2 8 E is static N M O S R ead O nly M em ory

RP23256E

Abstract: RP23256D
Contextual Info: iiim m NMOS 256 Kbit MASK ROM 32,768 word x 8 bit RP23256D/E, RP23257D E • GENERAL DESCRIPTION PIN CONFIGURATION (Top view) T h e RP23256D/E and RP23257D/E are static NM OS O U TPU T EN A BLE Read Only M em ories organized as 32,768 w ords by 8- O E j/ O E / N C

Contextual Info: NMOS 4Mbit MASK ROM 524,288wordx8bit RP234096 The R P234096 is static NM OS Read O nly Memory • P IN C O N F IG U R A T IO N ( Top view ) organized as 5 2 4288 words X 8 bits and operates from a single + 5 V Supply. And the consumption current Al 7 [ 1

RP231024D

Abstract: RP231024B
Contextual Info: RIC O H CO RP / E L E C T R O N I C 15E D B 77M4LTG GGG071Ö 5 WÊ No. 85-01 5-10-1985 RP231024B/D • GENERAL DESCRIPTION 1,048,576-bit 131.072X8 N M O S READ ONLY MEMORY ■ The RP231024B/D is a static NMOS read only Memory organized as 131,072 words by 8 bits and

Contextual Info: RICOH CORP/ EL ECTRONIC It SME D • 7 7 M 4 b ciG GGDSOTfl TflE m P C H EK-043-9004 NMOS 4Mbit MASK ROM RP234096 ^ 524,288w ordx8bit The R P234096 is static NM O S Read Only Mem ory ■ P IN C O N F IG U R A T IO N VMs-tr ( Top view ) organized as 5 2 4 2 8 8 words X 8 bits and operates from

RP230

Contextual Info: RP230 Series Hi-Perf Dual Stage Power Line Filter RP230 DUAL STAGE TO 40A CHASSIS MOUNT FILTER ROHS COMPLIANT Specifications Operating Freq.: DC - 60Hz Operating Voltage: 250V +10% Ambient Temperature: 40oC Inrush Rating: 20x 10ms , 1.5x (1.5min) Climatic Category : 25/100/21

ycap

Abstract: power amp schematic
Contextual Info: RP230 Series Hi-Perf Dual Stage Power Line Filter Medical Grade RP230 DUAL STAGE TO 40A CHASSIS MOUNT FILTER MEDICAL GRADE ROHS COMPLIANT Specifications Operating Freq.: DC - 60Hz Operating Voltage: 250V +10% Ambient Temperature: 40oC Inrush Rating: 20x 10ms , 1.5x (1.5min)

intel 27256

Abstract: INTEL 27256 EPROM RP23256E TI 2564 eprom 2564 eprom
Contextual Info: It Kbit MASK ROM / NMOS 3 256 2 , 7 6 8 w o r d x 8 b it RP23256D/E, RP23257D E • GENERAL D E SC R IP TIO N PIN CON FIG UR A TIO N (T op view) T he R P23256D /E and R P23257D /E are static NM OS Read Only M em ories organized as 32,768 w ords by 8bits and operate from a single + 5V supply.

ek042

Contextual Info: ItDQBQDffi] PRELIMINARY / EK-042-891 i NMOS IMbit MASK ROM RP231028 I 3 10 7 2 w o r d X 8 bit The RP231028 is static NMOS read only memory I PIN C O N F IG U R A T IO N (TOP VIEW ) organized as 131072 words by 8 bits and operates from a single +5V supply.

Contextual Info: Special Purpose Vacuum Interrupters RP233B RP233B Specifications ELECTRICAL RATINGS Dielectric Withstand Voltage 50/60 Hz 40 kV Voltage Rating at 300 kHz 40 kV pk at 10 MHz 35 kV pk at 30 MHz 25 kV pk Current Rating at 300 kHz 50 amps rms at 10 MHz 45 amps rms

jennings contactors

Abstract: D2488 JENNINGS transistor D2488
Contextual Info: High Voltage Vacuum RF Contactors RP233D, RF22 RF22-D2488 RP233D1585 AIR-ACTUATED RF CONTACTORS GENERAL SPECIFICATIONS MODEL NO. Operation Test Voltage Peak kV @ 60 Hz Operate Voltage Peak kV @ 32 MHz Continuous Current Amps RMS @ 32 MHz Contact Resistance Max (Milliohms)

RP231026D

Abstract: RP-231026
Contextual Info: KB@ Ga R P 2 3 1 2 6 EKM-10-8607 NMOS 1Mbit MASK ROM 1 3 1 ,0 7 3 w o r d X 8 b i t D / E • PIN CONFIGURATION (Top view) ■ G EN ER A L D ESCRIPTIO N The RP231026D./E M e m o ry is a static NMOS read only organized as 131,072 w ords by 8 bits and operates from a single+ 5 V supply.

RP23C4000

Contextual Info: P R E L IM IN A R Y ROM EKM-11 - 8 8 0 8 CMOS 4M bit MASK ROM RP23C4000 5 2 4 ,2 8 8 word X 8 b it7 2 6 2 ,1 4 4 word X 1 6 bit • O U T L IN E The R P23C4000 is a static CMOS read only Memory organized as 52 4 ,2 8 8 words by 8 bits or 2 6 2 ,1 4 4 words by 16 bits and operates from a single +5V supply. The bit organization can be selected

RP231027E

Abstract: RP231027D RP231
Contextual Info: E K -0 4 7 -9 0 0 6 R O M NMOS 1Mbit MASK ROM 131,072 word X 8 bit RP231027DE P IN C O N FIG U R A TIO N (T op view ) • GENERAL D E SC R IP TIO N The RP231027D/E is a static NMOS read only Memory organized as 131,072 words by 8 bits and operates from a single + 5V supply.

RP231027D

Contextual Info: / RP231027D/E • NMOS 1Mbit MASK ROM 131,072 w ord X 8 b it ■ PIN CONFIGURATION (Top view) G E N E R A L D E S C R IP T IO N T h e RP231027D/E is a sta tic NM OS read only M em ory organized as 131,072 w ords by 8 bits and op erates from a single + 5V supply.

RP231027D

Abstract: RP231027E
Contextual Info: RICOH CORP/ ELECTRONIC 5 4 E I> liD Û BÛ D Cil_ _ / " ^ L J W V -yLJLJ * RP231027D/E • 7 7 M 4 b clD G G O S O T M 3 37 « P C H T-K-u-tï N M O S 1Mbit M A S K R O M e 1 3 1 ,0 7 2 w ord X 8 b it ■ PIN CONFIGURATION (Top view) ■ GENERAL DESCRIPTION

RP23256E

Abstract: INTEL 27256 EPROM 27256 EPROM 2564 eprom RP23256 intel 27256 eprom 2564 27256 ROM pin configuration RP23256D i801
Contextual Info: K O NMOS 256 Kbit MASK ROM M 3 2 ,7 6 8 w ord x 8 bit RP23256D/E, RP23257D/E • PIN C O N F IG U R A T IO N (T o p vie w ) ■ G E N E R A L D E S C R IP T IO N T h e R P 2 3 2 5 6 D /E a n d R P 2 3 2 5 7 D /E a r e s ta tic N M O S O U T PU T ENABLE R ea d O nly M em o rie s o rg a n iz e d a s 32,768 w o rd s by 8

RP23256E

Abstract: RP23256D
Contextual Info: RP23256D/E.RP23257D/E • ABSOLUTE M AXIM UM RATINGS C ondition I U nit 1 V With respect to GND T a = 25*C Ì Limit —0 .5 —7 —0 .5 —7 -0 .5 -7 700 r 1 V -■ !-V — 1 mW *C o Vo Pd Topr T s tg P a ra m e te r Supply V oltage Input V oltage O utput V oltage

RP2364E

Contextual Info: ItOM / NMOS 64 Kbit MASK ROM 8,192 word X 8 b it RP2364E • GENERAL DESCRIPTION PIN CONFIGURATION (Top view) The RP2364E is static NMOS Read Only Memory organ­ ized as 8,192 words by 8-bits and operate from a single +5V O E 2/Ö E 2/N C A l2 supply. The RP2364E features autom atic power-down mode.

RP234096

Contextual Info: It rui JL ^PRELIMINARY! / EK-0 4 3 -9 0 0 4 NMOS 4Mbit MASK ROM 524,288word x 8bit RP234096 The RP234096 is static NMOS Read Only Memory organized as 5 2 4 28 8 words a single + 5 V Supply. X I PIN C O N F IG U R A T IO N 8 bits and operates from And the consumption current

PIC18F25J11

Abstract: PIC18F26J11 pic 18f26j11 PIC18f example codes CTMU PIC18F46J11 PIC18F24J11 DS39932D PIC18F usart init example PIC18 example C18 RTCC PIC16 lin bus example codes C
Contextual Info: PIC18F46J11 Family Data Sheet 28/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2011 Microchip Technology Inc. DS39932D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

DSPIC33EP512MU810

Abstract: PIC24EP512GU810 PIC24EP power factor correction microchip PMA-11 DS01208 ascl2
Contextual Info: dsPIC33EP512MU810 and PIC24EP512GU810 dsPIC33EP512MU810 and PIC24EP512GU810 100-pin TQFP to 100-pin Plug-In Module PIM Information Sheet OVERVIEW The dsPIC33EP512MU810 and PIC24EP512GU810 PlMs (MA330025-1 and MA240025-1, respectively) are designed to demonstrate the capabilities of the