RS 1092 L Search Results

CY7C1336

Abstract: CY7C1336-66AC
Contextual Info: fax id: 1092 CYPRESS PRELIMINARY CY7C1336 64K X 32 Synchronous 3.3V Cache RAM Functional Description Features • S u p p o rts 6 6 -M H z m icro p ro c ess o r ca ch e sy ste m s w ith zero w ait states • 64K by 32 co m m on I/O • Low S ta n d b y Pow er 1.65 mW, L ve rs io n

siemens rs 1002

Abstract: siemens RS 1001 L siemens rs 1003 YD 1102 siemens rs 1007 yl 1042 siemens SRL 353 yl 1110 RS1002A tt 2074
Contextual Info: Equivalent Transmitter Tubes Type BY 1161 C 1108 Siemens type RS 826 RS 1007 Type SRL 353 SRS 456 Siemens type (RS 1001 L) RS 1002 A C 1112 C 1136 CQS 50-1 CQS 200-3 CQS 200-3 CQS 400-1 CQS 600-1 CV 2130 CV 2131 CV 3879 CV 1172 E 125 A E 250 A Q 160-1 Q 400-1

SIEMENS RS 2064 CL

Abstract: 211 power Triode RF TV TRANSMITTER SIEMENS RS 2012 cl 860 tetrode 211 triode RS1054 RS 2024 cl SIEMENS RS 2052 2052 cv
Contextual Info: Selection Tables The following tables are intended to facilitate selection of the appropriate tubes for the modes of operation listed below. The tubes are, of course, also suitable for other applications than those given below. In this case we recommend to use the data sheets or to contact the manufacturer for further information.

738 1414

Contextual Info: CMOS DOT MATRIX HIGH DUTY LCD DRIVER • CMOS 100-bit Common Driver • High Voltage Resistant Output • CMOS High Voltage Resistant Process • DESCRIPTION The SED1631 is a 100 output dot matrix LCD common row driver for driving a high-capacity LCD panel at

83401B

Contextual Info: TYPE KOA RKL THICK FILM SIP RESISTOR LOW PROFILE NETWORK 2.50 0.0098 L n r ix \ 1.27 0.05 max. 0.25 ± 0.10 0.010 ± 0.004 No. o f Pins P 3 Body Length (L max.) 12 2.56 x P + 2.54 RATING ( H h c rs K circ uii RESISTANCE RANGE \ l OO L* IH K L’ ! • U ()( ï| j| >ni

Contextual Info: 10 T S A O M T A T 7 TSPuSA •SA ifY 'S lIIA ft 5 i* A Y frg'i'Y<MS3*§'g'YU 0 i tYW SYnttiUofllf 4 * 1 i± A ■ THERE IS NO IN FLUENCE IN THE PRODUCT PERFORMANCE THOUGH THE BLACK AND WHITE SPOT ETC. MIGHT BE CONFIRMED TO THE PLASTIC PART OF THIS PRODUCT AND THE SHADE

PTB Ex 80 1092

Contextual Info: Level measurement Magnetic float switch For horizontal installation Model HLS WIKA data sheet LM 30.02 Applications •■ Level measurement for almost all liquid media ■■ Pump and level control ■■ Chemical, petrochemical, natural gas, offshore, shipbuilding, machine building, power generating

Contextual Info: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V

s1854

Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Contextual Info: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #

Contextual Info: International [k?r Rectifier 4 A 5 -5 4 5 2 HEXFET Power MOSFET INTERNATIONAL • • • • • • O G lS b lQ 'ìS f l H I N R PD-9.580B IRFPF40 RECTIFIER bSE » Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching

Contextual Info: PD-9.1209 International J3R R ectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

A17a smd

Contextual Info: PD-9.1090 International j i g R ectifier_ IR L 6 4 0 S HEXFET Power MOSFET • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive • RDS on S pecified at V g s =4V & 5V

Contextual Info: PD-9.1002 international io r Rectifier IRFI744G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V qss - 4 5 0 V ^DS on = 0.63£2

EM- 546 motor

Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,

6AU6

Abstract: 6AU6 tube data 12AU6 6au6a 6au6 tube 6AU6 triode TUBE 6au6 6AU6 -TYPE 3AU6 6au6-a
Contextual Info: 6AU6-A 3AU6 12AU6 6AU6-A - 3AU6 - 1 2AU6 ET-T916A PENTODE Page 1 4-6 0 TUBES =DESCRIPTION AND RATING = The 6 A U 6 -A is a miniature sharp-cutoff pentode prim arily designed for use as a high-gain radio-frequency or intermediate-frequency amplifier. Its low grid-plate capacitance and high transconductance make it especially suited

BUT14

Abstract: SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
Contextual Info: MOTOROLA SC XSTRS/R F la E D | 33t3755 M OOflMaM1! fa | MOTOROLA S E M IC O N D U C T O R BUT14 TECHNICAL DATA 25 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 850 VOLTS

1RF350

Abstract: Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor
Contextual Info: MOTOROLA SC I X S T R S /R F IM E D • MOTOROLA 005^75 ■i SEM ICONDUCTOR I 1 j IRF350 IRF351 IRF352 TECHNICAL DATA Part Number Voss 'DS on N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF350 400 V 0.3 a IRF351 350 V 0.3 n

FPLA839

Abstract: TIFPLA840C IC-222 ic T M 2313
Contextual Info: 14 x 32 x TIFPLA839M, TIFPLA839C TIFPLA840M, TIFPLA840C 6 FIELD PROGRAMMABLE LOGIC ARRAYS JUNE 1984—REVISED DECEMBER 1987 • Input-to-Output Propagation Delay . . . 10 ns Typical • 24-Pin, 300-m il Slim Line Packages • Power Dissipation . . . 6 5 0 m W Typical

Contextual Info: TSW—209-09—S-S—RJ arrifec TSW-108—05—S-Q TSW-116-11—G-S I'i i. Mates vith: SSW. 5 SQ. ESW. ESQ. BCS. E 5W. IDSD. IDSS. CES, S _W TYPE STRIP NO. PINS PER ROW PIN CENTERS 11 Precision Drawn Terminal Strips H " I ^ f k i i i _ S ta n d a rd I O V V “ S trip

Contextual Info: PD-9.1211 International Rectifier IRFIBC40GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 3 0 V V g s Rating Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated

MN8090

Abstract: SM15 CSP-5 mX464 VSS13 5V15V
Contextual Info: PANASONIC INDL/ELEK -CIO 693285^2 P A N A S O N I C *75 DETJbiaaflSa D D D t b m 4 | ~ I NDLt E L E C T R O N I C D 72C 0 6 6 9 4 . T-41-55 MN8090 M N8 09 0 1024 t*'y h MOS <1 - 7 -f * - i > - b Self-Scanning 1024-Bit MOS Linear Image Sensors ^ ® M N 8090Ü ,

ADXL330

Abstract: pedometer AN900 ADXL330* accelerometer ADXL322 ADXL323 AN-602 ADXL322 equivalent AN602 newmax
Contextual Info: AN-900 ᆌᆩԴऻ One Technology Way t P.O. Box 9106 t Norwood, MA 02062-9106, U.S.A. t Tel: 781.329.4700 t Fax: 781.461.3113 t www.analog.com ཚࡗ‫े߲ڇ‬໏‫ऺ܈‬ሺഽऺօഗ‫ڦ‬Ⴀీ ፕኁǖJim Scarlett ᆯᇀαঙࢅθঙ၎‫ڪ‬Ljᅺܸ੗ኤ௽օ‫ྺ׊‬ፌ‫ؽٷ‬኱࿋ᅎ‫ڦ‬Ԡ

ua776

Abstract: UA776CH
Contextual Info: • r z T Ä 7=15=1237 0023^=1 S ■ " P ^ - O 0 !_ S G S -T H O M S O N 7 # M ^ o m i(O T (ô M S U A 7 7 6 S G S-THOMSON 3GE D PROGRAMMABLE SINGLE OP-AMPs ■ M ICRO PO W ER OPERATION ■ NO FREQ UENC Y COM PENSATION REQUIRED ■ W IDE PROGRAMMING RANGE

MPSU 60 transistor

Abstract: MPSU10 MPSU10 equivalent MPS-U10 MPSU 55 transistor mpsu 10 equivalent transistor mps-u High voltage amplifier transistor
Contextual Info: MPS-UIO SILICON NPN SILICO N HIGH V O L T A G E A M P L IF IE R T R A N SIS T O R NPN SILIC O N A N N U L A R T R A N SIS T O R . . . designed for high-voltage video and luminance output stages in T V receivers. • High Collector Emitter Breakdown Voltage —