RT 108 POWER TRANSISTOR Search Results

Tektronix 7603

Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
Contextual Info: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

SD1428

Abstract: sd1446 SD1477 M113 M135 M164 M175 M177 SD1273 SD1480
Contextual Info: SILICON POWER TRANSISTORS ÌPRf i m A broad range of devices are offered for the popular frequency bands in the VHF spectrum. Applications include low and mid-band FM mobile radio, FM broadcast and aircraft communications. .380 4LFL M113 .500 4LFL (M174)

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

BLV37

Abstract: ferroxcube wideband hf choke 4312 020 36642 B34 transistor
Contextual Info: I I N AUER PHILIPS/DISCRETE b^E T> m btS3T31 □□STD2S 7TÛ BLV37 IAPX A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in V H F broadcast tran sm itte rs. Features • • • In te rn a lly m atched in p u t fo r w ideband ope ra tio n and high p ow er gain

Contextual Info: i i N AHER P H I L IPS/DISCRETE b^E D bbS3T31 A 003^023 7TA BLV37 IAPX VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in VH F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain

ANI 1015

Contextual Info: H l i f r S wrr ^ .i-ii j i . T fc.-mi f W ? C iy W 0 liJ f 140 Com m erce Drive m u iK ^ u i t f V i y v f i t C iPA n 18938-1013 tv « /v v t u w Montgomeryvilfe, Tel: 2151 831 -9840 ^ »» ^ a ^ p SD1 01 5 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS

4312 020 36642

Abstract: BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711002b OObS'in 3dfl « P H I N BLV37 A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in V H F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain

blv 33 transistor

Abstract: BLV25 rf 2222 vp1020 multilayer
Contextual Info: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;

KE4416

Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents

rt 108 power transistor

Abstract: QRD1114 QRB1113 QRB1134 QRB1114 sensor QRD1114
Contextual Info: FQ OPTOELECTRONICS REFLECTIVE OBJECT SENSORS P a rt N um ber Dust C over Test C o n d itio n s ' f/ V ce b V CE0 m in u n its V m in *C | O N ) M ax R a tin g T a b le P h o to tr a n s is to r OPB703 YES 40 mA/5 V .200 mA 30 K OPB704 YES 40 mA/5 V .200

TOD 12K

Abstract: NTC probe 2.2k NTC 103 10K THERMODISC thermistor ntc 103 3977 C92NA NTC Thermistor 2.2k ntc 12k Mil-T-23648
Contextual Info: TO-92 PACKAGE TEMPERATURE SENSOR NTC Thermistor Probes Applications • • • • Radial NTC disc replacement Probe designs PCB temperature monitoring Power supply fan control Operating Temperature Range -40° to 140°C Thermal Time Constant 3 Seconds typical oil ; 11 Seconds typical (air)

Contextual Info: TO-92 PACKAGE TEMPERATURE SENSOR NTC Thermistor Probes Applications • • • • Radial NTC disc replacement Probe designs PCB temperature monitoring Power supply fan control Operating Temperature Range -40° to 140°C Thermal Time Constant 3 Seconds typical oil ; 11 Seconds typical (air)

2SD1582

Abstract: IC HE 4011 TL08 015 A0886
Contextual Info: NEC j i i r / V Y Z 2S D 1582 Silicon T ran sis to r J V = l> N P N x fc “ h =7 > > 7 * 9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier A 7 V X— 2 S D 1 5 8 2 ÌÌ, 9 9 < , L fr i) t LT, ^ PACK A G E DIMENSIONS hFEl ' 7 > y X ^ t ,

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

PTC 1k thermistor conversion table

Abstract: hai 7358 ptc 3225 k 250 0216 STR 6267 mt 1389 de thermistor ntc 5k NTC Thermistor 301 str 6267 f ntc 33 0528 str f 6267
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book NTC THERMISTOR ASSEMBLIES vishay dale vse-db0060-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .

2N7002x

Abstract: transistor SOT23 1d 2N7002M
Contextual Info: ALPHA SEMICONDUCTOR 2N7002 E xcellence in A n alo g Pow er P roducts N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION T he A L PH A S em iconductor’s 2N 7002 device is a vertical D M O S FE T transistor housed in a surface m ount SO T-23 for m icro­

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

PIN diode SPICE model

Abstract: BF100 transistor 8E-15 A741 THS3001 pspice model list transistor
Contextual Info: Application Report SLOA038 - October 1999 THS3001 SPICE Model Performance Jim Karki Mixed Signal Products ABSTRACT This application report outlines the SPICE model of the THS3001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison, model listing,

ja1050

Abstract: AH1014 TJA1043 TJA1042 LEARN ELECTRONIC ECU CAR BLOCK UJA1075 transistor A1048 car sensor ignition UJA1078 tja1051 Application Note
Contextual Info: TR1014 Application Hints - Standalone high speed CAN transceiver TJA1042 / TJA1043 / TJA1048 / TJA1051 Rev. 01.00 — 30 April 2010 Document information Info Content Title Application Hints - Standalone high speed CAN transceiver TJA1042 / TJA1043 / TJA1048 / TJA1051

M5226P

Abstract: 108-kHz M5226 1800P Graphic Equalizer ic
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M5226P,FP 5-ELEMENT GRAPHIC EQUALIZER IC DESCRIPTION The M5226 is a 5-element graphic equalizer 1C best suited to audio systems. It has a built-in 5-element resonance circuits with transistor system and an output OP amp. The 1C can be used in hybrid ¡Cs and compact sets of high-density assemblies.

AT41511

Contextual Info: HEWLETT- PAC KARD/ CMPNTS blE T> • 4447584 QOCHaiS 77b H H P A W hp% H EW LETT mL'KM PACKARD Low Cost General Purpose Transistors Technical Data AT-41511 AT-41586 Features D escription • L ow N oise F ig u re 1.4 dB Typical a t 1 GHz 1.7 dB Typical a t 2 GHz