RT600 Search Results

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

t10812

Abstract: Jensen B 17038 70-12911-04 Jensen* B 17038 B1182 70-12911-2 an 17830 A 009-036-9-001 sangamo capacitor rotary potentiometer dual 60k
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com MALLORY CONTROLS - WIREWOUND AND SWITCH PRODUCTS

Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

chip ic m7

Abstract: MPA201 200B 25-mils
Contextual Info: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a

Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

FET J134

Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

McMaster-Carr

Abstract: SD3933 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive

19S101-40ME4

Abstract: 19S101-40M ut-85 cable 32K242-40ML5 Rosenberger 19S141-40ME4 19S202-40ME4 cable UT 85 32K243 ROSENBERGER 32K243
Contextual Info: Rosenberger_ of North America, LLC Rosenberger is Exploring New Directions in Surface Mount Technology. Surface Mount Coaxial Connectors SMCC for High Frequency Applications. Released: 03 November, 2000 Prepared by: David Via Rosenberger of North America, LLC.

c1295 battery

Abstract: ipod touch circuit diagram TPM infineon SLB 9635 TT NEC C1181 nec c1251 Mx612 PC87541 AC45 RS600ME BE-34
Contextual Info: 5 4 3 CPU WR1G2 2 1 01 CPU Thermal Sensor Merom u-FCPGA 479PIN NB Thermal Sensor 3,4 ICS 951461 FSB D 667 MHZ (14) Memory Dual channel ON BOARD 256MB SO-DIMM NORMAL (10) SO-DIMM NORMAL ON BOARD 256MB (12) (11) HDD_PRIMARY DRIVE DDR II CHANNEL A CRT DDC2B

mallory date code

Abstract: McMaster-Carr 92196A146 1200 uF 63V capacitor SD3933 arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

9966

Abstract: SHT31 12AWG 700B M177 SD3933 91252 ATC700B122 McMaster-Carr a/IC+oz+9966
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

Contextual Info: MPA201 0.5 Watts, 12.5 Volts, Class A Linear to 500MHz Hybrid Amplifier GENERAL DESCRIPTION The MPA201 is a common emitter amplifier device designed for broadband performance to 500MHz in a format suitable for microstrip assembly and high reliability applications. Its wide dynamic rage and flexibility make it suitable for a

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

70-12911-04

Abstract: 70-12911-2 t10812 20k ohm potentiometer T-10812-71 70-12911-4 Westinghouse CO 8 HELICOPTER bell 76301 18K838263
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com WIREWOUND AND SWITCH PRODUCTS Type R Potentiometer Reference Data

1000uf, 6.3v electrolytic capacitor

Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz Preliminary GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

92196A146

Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

mallory date code

Abstract: McMaster-Carr 12AWG 700B M177 SD3933 st code vishay label
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

j167

Abstract: transistor j147 960-1215 transistor 500w LM1436 63v 2200uF 200B TAN500 RT6006 TRANSISTOR J214 M12200
Contextual Info: TAN500 500 Watts, 50 Volts Pulsed Avionics 960 to 1215 MHz GENERAL DESCRIPTION The TAN 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest