RTE DIOD Search Results

step recovery diodes

Abstract: step recovery
Contextual Info: POWER GENERATION DIODES Step recovery d io d e s . .40 Multiplier va ra cto rs . .41 Up co nve rte r v a ra c to rs . .42

Amp. mosfet 1000 watt

Abstract: Amp. mosfet 800 watt scr ZO 405 1000 watt power supply scheme 156 20k Tantalum Capacitor 180 watt lamp planar 230 volt ac overvoltage protection Amp. mosfet 500 watt Measurement Concepts Probe Measurements plji
Contextual Info: Table of Contents Features of SMQ C o n v e rte rs .1 Model Selection C ha Operational Ratings & Characteristics . 2

Contextual Info: SÌ786 - SNicönix Dual-Output Power-Supply Controller F EATURES • F ixe d 5 -V a n d 3 .3 -V S te p -d o w n C o n v e rte rs • L e ss th a n 5 00 -fi.A Q u ie s c e n t C u rre n t p e r C o n v e rte r

7 segment led display SIEMENS

Abstract: MAX138CPL L7106
Contextual Info: 19-0805; Rev 1; 12/94 y n y j x i y i / i 3V2 D ig it A /D C o n v e rte rs w ith B an d g ap R e fe re n c e a n d C h arg e -P u m p V o lta g e C o n v e rte r _F e a tu r e s ♦ Single Supply +2.5V to +7,0V Operation MAX 140 is a low segm ent-current version of the MAX 139

Contextual Info: MITSUBISHI SEMICONDUCTOR A pplication Specific Intelligent Power Module> PS11033 *o& FLAT-BASE TYPE INSULATED TYPE soff,e PS11033 INTEGRATED FUNCTIONS AND FEATURES • C o n v e rte r brid g e fo r 3 p h a se A C -to -D C p o w e r co nve rsio n. • 3 p h a s e IG B T in v e rte r b rid g e c o n fig u re d b y th e la te s t 3rd.

Contextual Info: MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module> PS11032 «o& FLAT-BASE TYPE INSULATED TYPE soff,e PS11032 INTEGRATED FUNCTIONS AND FEATURES • C o n v e rte r brid g e fo r 3 p h a se A C -to -D C p o w e r co nve rsio n. • 3 p h a s e IG B T in v e rte r b rid g e c o n fig u re d b y th e la te s t 3rd.

Contextual Info: MITSUBISHI SEMICONDUCTOR A pplication Specific Intelligent Power Module> PS11035 *o& FLAT-BASE TYPE INSULATED TYPE soff,e PS11035 INTEGRATED FUNCTIONS AND FEATURES • C o n v e rte r brid g e fo r 3 p h a se A C -to -D C p o w e r co nve rsio n. • 3 p h a s e IG B T in v e rte r b rid g e c o n fig u re d b y th e la te s t 3rd.

BSM30GP60 INVERTER CIRCUIT

Abstract: BSM30GP60
Contextual Info: eupec Technische Inform ation / Technical Inform ation ! g BSM30GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö c h s tzu lä s s ig e W e rte / M axim u m rated valu e s Diode Gleichrichter/ Diode Rectifier

RTAX2000

Abstract: UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION
Contextual Info: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions October 2010 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE

ALS04

Abstract: HD74ALS04 1S2074 HD74ALS05 CT50P
Contextual Info: H D 74A L S 04 H D 74A L S 05 # H e x In v e rte rs • H e x In v e rte rs w ith open c o lle c to r o u tp u ts • C I R C U I T S C H E M A T IC S ( 1 / 6 ) B P IN A R R A N G E M E N T 14 I Vcc Ti~| 64 T T | 6Y ~7ï~j ~?0~| 5Y 9 I .A « I4Y (Top View)

AN 7145 M circuit power amplifier

Abstract: LF400 MAX163 MAX183 MAX183ACNG MAX183BCNG MAX184 MAX185 10nf electrolytic capacitor IS51V
Contextual Info: yi/iyjxjyi/i 19-3127: Rev.O; 4/91 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te r n a l R e fe r e n c e In p u t T h e M A X 1 8 3 /1 8 4 /1 8 5 a r e 1 2 - b it, h ig h - s p e e d , B iC M O S , a n a lo g - to -d ig ita l c o n v e rte rs A D C s th a t

MAX644ESD

Contextual Info: L o w V o lta g e S te p -U p C o n v e rte rs Features G eneral Description M inim um s ta rtu p v o lta g e is 1.15V, b u t o n c e s ta rte d the d e v ic e w ill o p e ra te to low er v o lta g e s as th e b a tte ry d is ­ ch a rg e s . A s e p a ra te low b a tte ry m o n ito r is a v a ila b le ; it

Contextual Info: MOTOROLA Order this document by MUR420/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Power R ectifiers MUR420 MUR460 . . . designed for use in sw itch in g pow er supplies, in ve rte rs and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:

U1620

Abstract: u1640 U1620 RG u1640 diode motorola u1620 diode MOTOROLA U1640 u1660 diode motorola u1620 U-1640 ur1660
Contextual Info: MOTOROLA Order this document by MUR1620CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Power R ectifiers MUR1620CT MUR1640CT MUR1660CT . . . designed for use in sw itch in g pow er supplies, in ve rte rs and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:

Package Marking I60

Abstract: MURI60
Contextual Info: MOTOROLA Order this document by MUR120/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Power R ectifiers M UR120 MUR 140 M UR160 . . . designed for use in sw itch in g pow er supplies, in ve rte rs and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:

Contextual Info: J V MP \ Æ X \ j y \ tib le 8 B it A / D C o n v e rte r -Features ♦ Improved Second Source MAX160 ♦ Fast Conversion Time: 4/xs (MAX160) 1 5 /iS (MX7574) 4 No Missing Codes Over Temperature + Single +5V Supply

UA08A

Abstract: LM2560 2661M LM2661M a08a
Contextual Info: Semiconductor LM2660/LM2661 Switched Capacitor Voltage Converter General Description Features The LM2660/LM 2661 C M OS charge-pum p voltage con­ ve rte r inverts a positive voltage in the range of 1.5V to 5.5V to th e corresponding negative voltage. The LM2660/LM2661

Contextual Info: TP2635 TP2640 S u p e rte x inc. Low Thresh old Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R ds on BVdgs (max) (max) -350V 15Q -2.0V -400V 15Q -2.0V Order Number / Package !f b v dss / SO-8 TO-92 DICE* 0.7A TP2635LG TP2635N3

1N414R

Abstract: MAX183 MAX183ACNG MAX183ACWG MAX183BCNG MAX183BCWG MAX184 MAX185 IN014 LS 1316
Contextual Info: 19-3127; Rev.O; 4/91 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te rn a l R e fe re n c e In p u t _ F e a tu re s T h e M A X 1 8 3 /1 8 4 /1 8 5 a r e 1 2 - b i t , h i g h - s p e e d , B iC M O S , a n a lo g - to - d ig ita l c o n v e rte rs A D C s th a t

duracell dl123a

Abstract: MAX655CPD DL123A IRF520 equivalent MAX655 1N5817 IRF520 IRF530 L001 MAXL001
Contextual Info: yuyjxiyi/i L o w -V o lta g e S te p -U p DC-DC C o n v e rte r P o w e r-S u p p ly E v a lu a tio n K it The M AX655 EVKIT E va lu a tio n Kit d e m o n s tra te s the p e rfo rm a n c e of th e M AX655 +3V to +5V D C -D C c o n v e rte r in a s ta n d a rd a p p lic a tio n c irc u it F ig u re 1 .

Contextual Info: MOTOROLA Order this document by MUR3040/D SEMICONDUCTOR TECHNICAL DATA S W IT C H MODE P o w e r R e c tifie r MUR3040 . . . designed for use in sw itch in g pow er supplies, in ve rte rs and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:

29C828

Contextual Info: Advanced Micro Devices Am29C827A/A rn29C828A High-Performance CMOS Bus Buffers DISTINCTIVE CHARACTERISTICS • High-speed CMOS buffers a r d in ve rte rs - D-Y delay = 4 ns typical ■ Low standby power ■ JEDEC FCT-compatible spec s ■ Power-up/down disable circuit provides for

Contextual Info: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max

Contextual Info: TP2535 TP2540 S u p e rte x In c ._ Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^ D S O N ^ G S (th ) ^D(ON) b v dgs (max) (max) (min) TO-92 TO-243AA* Diet -350V 25ß