RTHJC Search Results

MAR 826

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified

Contextual Info: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

powerblock tt 162

Abstract: tt 92 powerblock powerblock tt 60 N thyristor tt 250 powerblock TD 95 N 400 thyristor tt 250 n 16 tt 251 n powerblock thyristor tt 330 powerblock TT 170 N powerblock TD 95 N 08
Contextual Info: Click on outline no. Phase Control Thyristor Modules Type VDRM ITRMSM ITSM ∫i2dt ITAVM/Tc V TO rT (di/dt)cr tq (dv/dt)cr RthJC RthCK Tvj max outline VRRM V A A A²s A/°C V mΩ A/µs µs V/µs °C/W °C/W °C VDSM=VDRM 10 ms, 10 ms, 180° el DIN typ. DIN IEC

powerblock tt 45

Abstract: thyristor TD 42 F 71 DT 4 7476 thyristor TD 42 dt200f TT 46 TT 7476 tt200f
Contextual Info: Click on outline no. Fast Thyristor Modules Type VDRM ITRMSM ITSM ∫i2dt ITAVM/Tc V TO rT (di/dt)cr tq (dv/dt)cr RthJC RthCK VRRM V A A A²s A/°C V mΩ A/µs µs V/µs °C/W °C/W °C typ. DIN IEC 180° el 747-6 sin VDSM = VDRM 10 ms, 10 ms, VRSM = Tvj max

Contextual Info: Netz-Gleichrichterdioden Rectifier diodes Diodes de redressement Typ Type V rrm If r m s m V rs m V A p D 121 N ip g iie iO / i 2dt If s m If a v m ^ c V TO r-r Rthjc W j m ax VRRM + 100 V = " * , 10 m s, 10 m s, ‘v ,= tv ,= 1 8 0 °el tv, max tv j max

Contextual Info: Einpreßdioden Press-fit diodes Diodes press-fit Typ V rrm Type V rs m = V r r m If r m s m A 75 #50 300 5 5 . ’ BYŸ 57/58-E BYY 57/58 400 ' f a id 700 ,f&,' ! 11 55 If r m s m V rrm Maßbild RthJC 10 ms, tv, = 1v, = 180 °el tvj max t'.'i max fwi max

Contextual Info: EUPEC m 4TE D 3 4 0 3 3 1}? DQ0Ü150 5TT • Thyristor-diode-modules for current source inverters V V A Itsm / i 2dt Itavm ^ c 10 ms, tvj max 10 ms, tvj max 180 °el sin. kA A2s A/°C It di/dt cr tq (dv/dt)cr Rthjc *vj = tvj max DIN typ. IEC 747-6 DIN IEC 747-6

Contextual Info: FS 25 R 12 KF 2 Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,104 °C/W DC, pro Zweig/per arm 0,625 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200

Si7421DN

Abstract: Si7421DN-T1
Contextual Info: Si7421DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −9.8 0.043 @ VGS = −4.5 V −7.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile

IGBT FZ 800

Abstract: IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6
Contextual Info: V ces V O T ype ICRM VcEsat ton ts tf RthJC Tvj max > IGBT High Power Modules A V MS Tvj=25°C MS TVj=25°C ° c /w °c Tvj=25°C MS Tvj=25°C typ. typ. typ. typ. 0,0570 0,0460 150 150 ; 1H9 0,90 0,25 0,15 ! ÌH2 0,09 0,15 0,15 0,13 0,20 0,20 0,15 0,09 0,15

D67U

Contextual Info: Fast rectifier diodes Type If r m s m V rrm V rsm = V rrm Ifsm ./¡2dt If a v m ^ c V TO rT Ir m RthJC tv i m ax Outline +100 V1) 10 ms, 10 ms, tvi = t»i = tv j = tvj max 180 “el tvj max tv , tvj max tvj max ip = Ifavm sin. d ip /d t = V V m ii °c/w

AECQ101

Contextual Info: SQ7415EN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile

psd162-16

Abstract: PSD162
Contextual Info: Three Phase Rectifier Bridges 3 ~ Rectifier Bridges, B6U Type VvRMS IDAV TC IFSM 45°C 10ms VTO rT TVJM RthJC Chip -Module K/W RthJH Chip -Module K/W Package style Figure PSD 50/08 PSD 50/12 PSD 50/14 PSD 50/16 PSD 50/18 PSD 62/08 PSD 62/12

Si7421DN

Abstract: Si7421DN-T1
Contextual Info: Si7421DN Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −9.8 0.043 @ VGS = −4.5 V −7.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC

800A

Contextual Info: FZ 800 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e rm o d u le 0,02 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A pro Baustein / per module Ic °C/W

SI7423DN-T1-E3

Abstract: Si7423DN
Contextual Info: Si7423DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.018 @ VGS = −10 V −11.7 0.030 @ VGS = −4.5 V −9.0 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC

FZ 300 R 06 KL

Contextual Info: FZ 25 A 06 KL Elektrische Eigenschaften RthJC Hochstzulässige W erte VCES Maximum rated values 600 V 5 V 25 A V ecs Ic Thermal properties Therir Electrical properties 150 - 4 0 / + 150 - 40 / + 125 Wj max tvj op * s tg Icrm tP = 1 ms 50 A P to t tc = 25°C

Contextual Info: FS 15 R 12 KF 2 Therm ische Eigenschaften Therm al properties 0,167 DC, pro Baustein / per module RthJC 1 DC, pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 15 A

Contextual Info: FF 150 R 06 KL 2 Therm al properties Therm ische Eigenschaften 0,09 Rthjc DC, pro Baustein /p e r module DC, pro Baustein / per module 0,18 0,03 RthCK pro B a u ste in /p e r module 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties

vqe 24 d

Contextual Info: FS 50 R 06 KF 3 Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,075 °C/W RthJC DC, pro Zweig / per arm 0,450 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige Werte V ces Maximum rated values

Contextual Info: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V c es le Ic rm P to t 600 V 200 A tp = 1 ms 400 A tc = 25°C 800 W Thermal properties

1BW TRANSISTOR

Abstract: F400R12KF
Contextual Info: * 7 ^ 3 9 - 3 / F 40 0R 1 2K F ’ EU P E C S5E D • 3M 03ET7 b3T ■ UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module 0,052 RthJC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte

Contextual Info: F 8 A 06 FF Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften RthJC DC Höchstzulässiqe Werte V ces Maximum rated values 600 V V ecs 5 V Ic 8 A Ic r m tp = 1 ms 16 A P lo t tc = 2 5 'C 30 W V ge 20 V V eg 20 V tvj max tvj op Utg Mechanische Eigenschaften