RTJC Search Results

ALLOY 52

Abstract: 100V 60A Diode
Contextual Info: Jolltron PRODUCT DEVICES.INC. OÂTÂL SCHOTTKY POWER' RECTIFIERS MAXIMUM R A T I N G S PER DIO D E 100 V 70 A PEAK ONE CYCLE NON-REPETITIVE, SURGE CURRRENT IFSM 600 A PEAK REPETITIVE REVERSE CURRENT IRRM 1.0 A TJ -65 TO +175 °C Ts tg -55 TO + 150 °C RtJc

Contextual Info: Advance Product Information July 13, 2006 Wideband LNA with AGC TGA2513 Key Features • • • • • • • • Primary Applications • Wideband Gain Block / LNA • X-Ku Point to Point Radio • IF & LO Buffer Applications Product Description Vd = 5V, Id= 75mA, Vg2 = 2V, Typical Vg1 = -60mV

Contextual Info: Advance Product Information June 2, 2005 Ka-Band Packaged MPA TGA4902-SM Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications

Contextual Info: Advance Product Information May 19, 2004 4 Watt Ka Band HPA TGA4505-EPU Key Features • • • • • • • • Frequency Range: 24-31 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology

Contextual Info: Advance Product Information September 21, 2005 32 - 47 GHz Wide Band Driver Amplifier TGA4521 Key Features • • • • • • • • Product Description The TriQuint TGA4521 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint’s

Contextual Info: Advance Product Information September 18, 2006 Ka-Band Packaged MPA TGA4902-SM Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications

FGL40N120AND

Abstract: 100W UPS FGL40N120AN IH 001
Contextual Info: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor

RL96

Abstract: IEC1131 VNQ860 VNQ860SP
Contextual Info: P6 VNQ860 / VNQ860SP QUAD CHANNEL HIGH SIDE DRIVER TYPE VNQ860 VNQ860SP RDS on (*) IOUT VCC 270mΩ 0.25A 36V (*) Per each channel CMOS COMPATIBLE I/Os • UNDERVOLTAGE & OVERVOLTAGE nSHUT- DOWN ■ SHORTED LOAD PROTECTION ■ THERMAL SHUTDOWN ■ VERY LOW STAND-BY CURRENT

FDMA1028NZ

Contextual Info: FDMA1028NZ tm Dual N-Channel PowerTrench“ MOSFET General Description Features This device is designed specifically as a single package „ x 3.7 A, 20V. RDS ON = 68 m: @ VGS = 4.5V RDS(ON) = 86 m: @ VGS = 2.5V solution for dual switching requirements in cellular

FDMC7692

Contextual Info: FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m: Features General Description „ Max rDS on = 8.5 m: at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDD5810-F085

Abstract: FDD5810 FDD5810_F085
Contextual Info: FDD5810_F085 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m: Features Applications „ RDS ON = 22m: Typ.), VGS = 5V, ID = 29A „ Motor / Body Load Control „ Qg(5) = 13nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management

FDMC4435BZ

Abstract: 63a23 05MAX00 FDMC4435B
Contextual Info: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDN8601

Contextual Info: FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m: Features General Description „ Max rDS on = 109 m: at VGS = 10 V, ID = 1.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

FDMS86201

Abstract: FDMS86201/pdf/MAX13042EETD -datasheet
Contextual Info: Preliminary Datasheet FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

C7 MARKING Fairchild

Contextual Info: FDM3622 N-Channel PowerTrench MOSFET tm 100V, 4.4A, 60m: General Description Features r DS ON = 44m: (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

IRFZ44N APPLICATION NOTE

Abstract: dc motor irfz44n IRFz44n equivalent datasheet of irfz44n MOSFET IRFZ44N IRFZ44N datasheet for irfz44n pin of IRFZ44N IRFZ44N DATASHEET 0010T2
Contextual Info: IRFZ44N ! N-CHANNEL Power MOSFET APPLICATION FEATURES ‹ ‹Ultra Low ON Resistance Buck Converter High Side Switch ‹DC motor control , Ups .etc , & other Application RDS ON Max. VDSS 55V 17.5mȍ ‹Low Gate Charge ‹ Dynamic dv/dt Rating ID ‹ Inductive Switching Curves

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: P6 VNQ860 / VNQ860SP  QUAD CHANNEL HIGH SIDE DRIVER PRELIMINARY DATA TYPE VNQ860 VNQ860SP RDS on (*) IOUT VCC 270mΩ 0.25A 36V (*) Per each channel CMOS COMPATIBLE I/Os • UNDERVOLTAGE & OVERVOLTAGE n SHUT- DOWN ■ SHORTED LOAD PROTECTION ■ THERMAL SHUTDOWN

PCB Rogers RO4003

Abstract: TGA2925-SG RO4003
Contextual Info: Advance Product Information Aug 16, 2005 5.6 Watt 3.5GHz Packaged HPA TGA2925-SG Key Features • • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 2.5%EVM @29dBm OFDM signal at 3.5GHz 37.5 dBm Nominal Psat Internally Partially Matched

TGA4508

Abstract: 2005 ka
Contextual Info: Advance Product Information July 19, 2005 Ka Band Low Noise Amplifier TGA4508 Key Features • • • • • • • Preliminary Measured Data Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain 2.8 dB Nominal Noise Figure 14 dBm Nominal P1dB @ 38 GHz

TGA2922-SG

Abstract: 802.11a Amplifier sg 81 AVX06035J1R2BBT AVX06035J3R9BBT RO4003
Contextual Info: Advance Product Information April 27, 2005 2 Watt 802.11a Packaged Amplifier TGA2922-SG Key Features • • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 480mA 34 dBm Nominal P1dB @ 8V 480mA 2.5% EVM at 25dBm output power

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: MOTOROLA Order this document by MURP20020CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MURP20020CT Designer's Ultrafast Power Rectifier ULTRAFAST RECTIFIER 200 AMPERES 200 VOLTS POWERTAP II Package Features mesa epitaxial construction with glass passivation. Ideally suited

PCB Rogers RO4003 substrate datasheet

Abstract: 5 Watt S-Band Power Amplifier 6 ghz amplifier 10w HPA 1200 PCB Rogers RO4003 RO4003 TGA2924-SG MIL-C-2 Rogers RO4003 substrate
Contextual Info: Advance Product Information Aug 16, 2005 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched