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rtm2301 Abstract: RTM2301CX MOSFET P-Channel sot-23 Text: E L E C T R O N I C RTM2301 20V P-Channel Enhancement Mode MOSFET VDS = - 20V RDS on , Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Pin assignment: 1. Gate 2. Source 3. Drain Features Advanced trench process technology	Original	PDF	RTM2301 OT-23 RTM2301CX OT-23 rtm2301 RTM2301CX MOSFET P-Channel sot-23

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Abstract: RTM2301CX MOSFET P-Channel sot-23
Text: E L E C T R O N I C RTM2301 20V P-Channel Enhancement Mode MOSFET VDS = - 20V RDS on , Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Pin assignment: 1. Gate 2. Source 3. Drain Features Advanced trench process technology

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RTM2301 OT-23 RTM2301CX OT-23 rtm2301 RTM2301CX MOSFET P-Channel sot-23