RU 4 J Search Results

diodes ru 4c

Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter VRM I F（ AV） （A） （V） （ ）is with Type No. Heatsink RU 4Y 100 RU 4Z 200 RU 4 400 RU 4A 600 RU 4B 800 RU 4C 1000 IFSM （A） Tstg Tj

diodes ru 4c

Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. VRM (V) RU 4Y 100 RU 4Z 200 RU 4 400 RU 4A 600 RU 4B 800 RU 4C 1000 Tj (°C) Tstg (°C) VF (V) I F (AV) (A) IFSM (A) ( ) is with Heatsink 50Hz

triac LT 5220

Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
Contextual Info: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)

3X14

Abstract: 4X11
Contextual Info: B H 3 X 1 4 .2 5 48.9 UTOI LU Ul TPT3T LE m CT od x w r lu ui CM J~ ì ru rjv ru "Lr|v ru r 4 X 1 4± 0.1 57 LIGHT PIPE A S SE M B L Y 5 7 .7 5 LIG H TPIPE CLIP C AG E A S SE M B L Y MATERIAL : CAGE: C O P P E R ALLOY EMI GASKET: ST A IN E SS STEEL LIGHT PIPE: PC

diodes ru 4c

Abstract: GH3F RU4A k 300 ru RU4AM gh-3f 4z marking MARKING 2AM diodes ru 1h
Contextual Info: l à ai m is LI M l l l l t k i c U S A H E r Fast Recovery Diodes D I ? ? 4 1 DDDD131 b | •Vrm:100~ 2000v bio:0.i~ 4.0A T - £> I ~ £? RU/GH/GU/RP/RS/RH R a t in g / Characteristics V r sm (V V rm (V ) lo (A ) RU 2M 450 400 RU 2A M 650 600 RU 2YX

Contextual Info: 6 FT, -•I1-05 REF t f lX 3 £ v " ( 7 L n ru L n ru WIRING DIAGRAM £H> ”A-.( M> •*' | 4 - v ELL0W — |4 i T WHITE*, m |*7 ' 2 W " O R A N O E 3 • “-BLACK 4 4-4— GREEN. * 4 - 3 -[■-¡■— BLUE — —j —L. 5 4-4— RED.f-4l 7

MAS9118

Abstract: MAS9118ASMB-T MO-187 MSOP10 RIFA POWER
Contextual Info: DA9118.001 4 May, 2001 0$6 $XGLR '$& ZLWK &ODVV' 2XWSXW 6WDJH • • • • • RU /RZ &RVW %X]]HU RU 0LQLDWXUH 6SHDNHU [FHOOHQW )UHTXHQF\ 5HVSRQVH +LJK (IILFLHQF\  2KPV 'ULYHU 6HULDO ,QWHUIDFH 6HSDUDWH 9ROWDJHV DW ,QWHUIDFH DQG 'ULYHU '(6&5,37,21

Contextual Info: ru -< “ D [HJ lo cn i+ o e p ro 0, 4 i p0.' 05 1 Apr,2000 HSDP24-P-2.00A J Unit nn

Contextual Info: DWG NO: ^ No OF POS X .0 5 0 + .1 25 REF — [1 .2 7 ] [3 .1 8 ] A L LO W A B LE C O P L A N A R IT Y PO S ITIO N S - 0 5 TH RU - 2 9 . 0 0 4 M AX - 3 0 TH RU - 3 9 .0 0 6 M AX - 4 0 TH RU - 5 0 . 0 0 8 M AX — N o OF POS X .0 5 0 + .0 2 5 (RE F)— [1 .2 7 ]

CTU1S

Abstract: GH3S GH-3S
Contextual Info: l à ai m is LI M l l l l t k i c U S A H E r Fast Recovery Diodes D I ? ? 4 1 DDDD131 b | •Vrm:100~ 2000v bio:0.i~ 4.0A T - £> I ~ £? RU/GH/GU/RP/RS/RH R a tin g / Characteristics V rsm (V V rm (V) lo (A) RU 2 M 450 400 R U 2A M 650 600 RU 2 Y X

J 6920 A

Abstract: J 6920
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSB -C E R 6 6 4 7 G W ELECTRO—OPTICAL CHARACTERISTICS T*=25X PER CIRCUIT ru 71.90 C2.831: CO 66.00 [2.5*583 V.A, rii o ~ PARAMETER 2 2 ” -i PEAK WAVELENGTH O SD w FORWARD VOLTAGE REVERSE VOLTAGE CL ru MIN TYP \ in 03

C0811

Abstract: 1N2828B DIODE YV 950 zener 245 245 zener in4562b 1N2804 1N4557B 1N4558B 1N4559B
Contextual Info: 1 N 2 8 0 4 th ru 1NI2846B a nd 1 N 4 5 5 7 B th ru 1N4564B Microsemi Corp. FEATURES SILICO N 50 WATT Z E N E R D IO D E S • ZENER VOLTAGE 3.9V to 200V • AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 % • DESIGNED FOR MILITARY ENVIRONMENTS See Below

Contextual Info: UNCONTROLLED DOCUM ENT PART N U M BER LXP —DI5PLAYBOX3 0802 40 0 2 1 2004 1602 CO NTRAST CDNTRDL L È 3 4 5 cn oo oo GO Ch CO 00 00 o SO CD \D ru ru OJ OJ 3 1 6 ,0 0 REV. 4 0 .0 0 [ 1 2 .4 4 1 3 i Ì/ - R EG U LAR - B A C K L IG H T - 110V AC D N /D F F

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSB -C E R 6 6 4 7 G W ELECTRO—OPTICAL CHARACTERISTICS T*=25X PER CIRCUIT ru 71.90 C2.831: CO 66.00 [2.5*583 V.A, rii \ rn i so us 1_1 CT. CTi o r- \ ~ PARAMETER 2 2 ” - i PEAK WAVELENGTH CL MIN ru MAX 565 FORWARD VOLTAGE

Contextual Info: t— « CMOS PARALLEL FIFO 64 x 4-BIT AND 64 x 5-BIT Integrated Device Technology, Inc. IDT72401 IDT72402 IDT72403 IDT72404 Ol ru ru FEATURES: O utput E nable OE pin. T h e FIFO s a cce p t 4-b it or 5-bit data at th e data input (D o- d 3, 4). T h e stored data s ta ck up on a f irstin/first-ou t basis.

1.5 128 CSTN LCD

Abstract: 1.5" CSTN LCD C1441 LCM 026
Contextual Info: UNCONTROLLED DOCUMENT 0.80 [0.031] |— REV, 1,60 [0,063] 0,50 [0.020] £ ] _ 2 8 .5 2 21.67 [0 .8 5 3 ] ' 1 r ru CD rü o no <c in CO o O ^dON cn ru •*d- CO PIXEL DETAIL c Q > E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 8. 4.20.07 17,40 [0,685]

IN5288

Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Contextual Info: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :

b337

Contextual Info: » *n U a * > > V V iS O CO Il to V 4Ï Ä .4* V > fr 11 >4 “S 3* mS «rlm 8S m 2t 3t 5d so & & SL Ä nult ru H i 3 o tr PQ SS 3S muH iPl pl m ffl hd ü *"d st ä II Ul o O nn nult < O ö Ul Ul xn ru 0 ü cjn cn Ì i-* o o * Ol -S O HbO 00 bo cn o cn o o>

C175

Contextual Info: UNCONTROLLED DOCUMENT 3 .8 1 r [0 .150] 1.7 8 42 r [0 .0 7 0 ] <39 P L S . 6,10 B 1=1 B 1=1 B =1 B ru \D CO S S A -L X B 4 0 IW PRELIMINARY IN P / N DIR. 10.94 C0.431] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER MIN PEAK WAVELENGTH ru [0 .100] P L S .)

Contextual Info: REV. LOCAS. A DESCRIPTION NEW DATE DRAWN 28.09.1988 L IL Y - 20 . 6 0 - 3.70 1.2 7 's r / / it in o ru i i o in W ro 2 .5 4 - -i o o o sD o ru - 8 .8 9 - IP 8-00.90 ¡¡C l £ PART NUMBER MJS-188-R1M10-96 MJS-188-R1M10-97 MJS-188-R1M10-98 MJS-188-R1M10-9H

FMPG2F

Abstract: FMQ-G1FS FMP-G2FS FMP G2FS G5FS AS01 ES01 ES01A ES01F ES01Z
Contextual Info: –40 to +150 1.0 1.0 10 500 100 4 100/200 12 0.6 RU 4D 50 –40 to +150 1.8 1.5 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 RU 4DS 1.5 2.5 50 –40 to +150 1.8 3.0 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 ES01F 0.5 20 –40 to +150 2.0 0.5 10 200 100 1.5

7471N

Contextual Info: 1 N 7 4 6 th ru 1 N 7 5 9 A , -1 and 1 N 4 3 7 0 th ru 1 N 4 3 7 2 A , -1 D O -35 SC O T T S I >.M F. .17 F o r m o r e i n f o r m a t i o n c a ll; 602 941-6300 1% and 2% VERSIONS “C ” and “D” A VA ILA B LE SILICON 500 mW ZENER DIODES FEA TU R ES

1N5820

Abstract: 1N5821 1N5822
Contextual Info: O JGD 1N5820 th ru 1 N5822 3 .0 AMPS. SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 40 volts CURRENT 3.0 Amperes D O -2Q1A D FEATURES T * Low forward voltage drop * High current capability .210 5 . 3 . 190 (4 . 8 ) * High reliability 1 .0 ( 25 . 4 ) MIN.

SR503

Abstract: SR502 SR504 SR505 SR506 SR510
Contextual Info: JGD O SR502 th ru SR510 5 .0 AMPS. SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 100 Volts CURRENT 5.0 Amperes DO-2Q1AD FEATURES T * Low forward voltage drop * High current capability .21 0 5 .3 .19 0 (4 .8 ) * High reliability 1.0 (2 5 .4 ) MIN. DIA.