RUGGED 600V Search Results
RUGGED 600V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LMZM23600V5SILR |
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36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
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| LMZM23600V3SILT |
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36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
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| LMZM23600V5SILT |
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36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
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| LMZM23600V3SILR |
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36-V, 0.5-A Step-Down DC/DC Power Module in 3.8-mm x 3-mm Package 10-uSiP -40 to 125 |
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| MRJR64810F |
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Rugged RJ45, IP67, Vertical, with Ferrite |
RUGGED 600V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DSA0021811Contextual Info: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. |
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FQB7N60, FQI7N60 FQB7N60 DSA0021811 | |
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Contextual Info: QFET N-CHANNEL FQB4N60, FQI4N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 15nC Typ. |
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FQB4N60, FQI4N60 FQB4N60 | |
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Contextual Info: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. |
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FQB3N60, FQI3N60 FQB3N60 | |
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Contextual Info: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ. |
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FQB2N60, FQI2N60 FQB2N60 | |
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Contextual Info: QFET N-CHANNEL FQPF12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. • |
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FQPF12N60 O-220F | |
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Contextual Info: QFET N-CHANNEL FQPF1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ. • |
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FQPF1N60 O-220F | |
fqpf2n60Contextual Info: QFET N-CHANNEL FQPF2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ. • |
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FQPF2N60 O-220F fqpf2n60 | |
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Contextual Info: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. |
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FQB5N60, FQI5N60 FQB5N60 | |
fqaf12N60Contextual Info: QFET N-CHANNEL FQAF12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. • |
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FQAF12N60 fqaf12N60 | |
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Contextual Info: QFET N-CHANNEL FQD1N60, FQU1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ. |
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FQD1N60, FQU1N60 FQD1N60 | |
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Contextual Info: QFET N-CHANNEL FQB1N60, FQI1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ. |
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FQB1N60, FQI1N60 FQB1N60 | |
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Contextual Info: QFET N-CHANNEL FQD2N60, FQU2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ. |
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FQD2N60, FQU2N60 FQD2N60 | |
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Contextual Info: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. |
OCR Scan |
FQB12N60, FQI12N60 0-55Q D2PAK/TO-263 D2PAK/TO-263 | |
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Contextual Info: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ. |
OCR Scan |
FQB6N60, FQI6N60 D2PAK/TO-263 D2PAK/TO-263 | |
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Contextual Info: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. |
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FQB12N60, FQI12N60 FQB12N60 | |
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Contextual Info: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ. |
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FQB6N60, FQI6N60 FQB6N60 | |
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Contextual Info: QFET N-CHANNEL FQD3N60, FQU3N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. |
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FQD3N60, FQU3N60 FQD3N60 | |
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Contextual Info: QFET N-CHANNEL FQA12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. • |
OCR Scan |
FQA12N60 0-55Q | |
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Contextual Info: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ. |
OCR Scan |
FQB2N60, FQI2N60 D2PAK/TO-263 D2PAK/TO-263 | |
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Contextual Info: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. |
OCR Scan |
FQB7N60, FQI7N60 D2PAK/TO-263 D2PAK/TO-263 | |
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Contextual Info: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. |
OCR Scan |
FQB5N60, FQI5N60 D2PAK/TO-263 D2PAK/TO-263 | |
diode SM 78AContextual Info: QFET N-CHANNEL FQAF12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. • |
OCR Scan |
FQAF12N60 0-55Q diode SM 78A | |
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Contextual Info: SSW/I2N60A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 j~iA Max. @ VOS= 600V Lower Rq^ qn) : 3.892 £2 (Typ.) |
OCR Scan |
SSW/I2N60A t00lC) | |
12n60c
Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
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G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB | |